Order this document by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc • High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS CASE 369A–13 MAXIMUM RATINGS Symbol Value Unit Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage VCB 40 Vdc VCEO 25 Vdc VEB 8 Vdc Collector Current — Continuous Peak IC 5 10 Adc Base Current IB 1 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 12.5 0.1 Watts W/_C Total Device Dissipation @ TA = 25_C* Derate above 25_C PD 1.4 0.011 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC RθJA 10 89.3 _C/W Operating and Storage Junction Temperature Range CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.190 4.826 Rating Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient* 0.165 4.191 THERMAL CHARACTERISTICS Symbol Min Max Unit VCEO(sus) 25 — Vdc — — 100 100 — 100 0.118 3.0 Characteristic 0.07 1.8 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125_C) ICBO Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) IEBO * When surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. [ nAdc 0.243 6.172 Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) 0.063 1.6 OFF CHARACTERISTICS inches mm nAdc (continued) REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ [ ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 70 45 10 — 180 — — — — 0.3 0.75 1.8 Unit ON CHARACTERISTICS DC Current Gain (1) (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) hFE — Collector–Emitter Saturation Voltage (1) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc) VBE(sat) — 2.5 Vdc Base–Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc) VBE(on) — 1.6 Vdc fT 65 — MHz Cob — — 80 120 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle (2) fT = hfe• ftest. 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 VCC + 30 V 25 µs 20 RC +11 V 1.5 0 15 SCOPE RB –9 V 1 10 0.5 5 0 0 TA (SURFACE MOUNT) tr, tf ≤ 10 ns DUTY CYCLE = 1% TC 25 50 D1 51 –4 V 75 100 125 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB ≈ 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB ≈ 100 mA 150 T, TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 1K 10K td 500 300 200 5K 3K 2K 1K 50 30 20 tr 10 VCC = 30 V IC/IB = 10 TJ = 25°C 500 300 200 50 30 20 Figure 3. Turn–On Time VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 100 MJD200 MJD210 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMPS) 2 t, TIME (ns) t, TIME (ns) 100 5 3 2 ts 5 10 MJD200 MJD210 tf 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 3 5 Figure 4. Turn–Off Time Motorola Bipolar Power Transistor Device Data 10 NPN MJD200 400 PNP MJD210 400 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 25°C 200 – 55°C 100 80 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 0.5 0.7 1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2 3 TJ = 150°C 200 25°C 100 80 – 55°C 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 5 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMP) 3 5 Figure 5. DC Current Gain 2 2 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 2 3 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 5 2 3 5 3 5 Figure 6. “On” Voltage +2 + 2.5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) + 2.5 *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 +1 + 0.5 θVC for VCE(sat) 25°C to 150°C 0 – 0.5 – 55°C to 25°C –1 25°C to 150°C – 1.5 θVB for VBE –2 – 2.5 0.05 0.07 0.1 – 55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 5 +2 *APPLIES FOR IC/IB ≤ hFE/3 + 1.5 25°C to 150°C +1 + 0.5 *θVC for VCE(sat) 0 – 55°C to 25°C – 0.5 –1 – 1.5 25°C to 150°C θVB for VBE – 55°C to 25°C –2 – 2.5 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMP) Figure 7. Temperature Coefficients Motorola Bipolar Power Transistor Device Data 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 RθJC(t) = r(t) θJC RθJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 P(pk) t1 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 t2 20 50 100 200 Figure 8. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5 3 2 1 5 ms TJ = 150°C 100 µs 1 ms 500 µs dc 0.1 0.01 0.3 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Case 369–05 may be ordered by adding a “–1” suffix to the device title (i.e. MJD200–1) v 1 2 3 5 7 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 30 Figure 9. Active Region Safe Operating Area 200 C, CAPACITANCE (pF) TJ = 25°C Cib 100 70 50 Cob MJD200 (NPN) MJD210 (PNP) 30 20 0.4 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 10. Capacitance 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR CASE 369A–13 ISSUE W C B V E R 4 A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369–07 ISSUE K Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJD200/D* MJD200/D