ONSEMI MJE3055

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by MJE2955T/D
SEMICONDUCTOR TECHNICAL DATA
! . . . designed for use in general–purpose amplifier and switching applications.
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• DC Current Gain Specified to 10 Amperes
• High Current Gain — Bandwidth Product —
fT = 2.0 MHz (Min) @ IC = 500 mAdc
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
Value
Unit
VCEO
60
Vdc
Collector–Base Voltage
VCB
70
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
PD†
75
Watts
0.6
W/_C
– 55 to + 150
_C
Total Power Dissipation @ TC = 25_C
Derate above 25_C
MJE3055T, MJE2955T
Operating and Storage Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
θJC
1.67
_C/W
Thermal Resistance, Junction to Case
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
IC, COLLECTOR CURRENT (AMP)
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
5.0
5.0 ms
1.0 ms
100 µs
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
20
30
7.0
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on T J(pk) = 150_C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)
150_C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
v
50 60
Figure 1. Active–Region Safe Operating Area
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
ICEO
60
—
Vdc
—
700
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
µAdc
mAdc
—
—
1.0
5.0
—
—
1.0
10
—
5.0
20
5.0
100
—
—
—
1.1
8.0
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage (1)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.8
Vdc
fT
2.0
—
MHz
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
20%.
500
90
VCE = 2.0 V
PD, POWER DISSIPATION (WATTS)
hFE, DC CURRENT GAIN
300
200
TJ = 150°C
100
25°C
50
– 55°C
30
20
10
5.0
0.01
0.02
0.05 0.1
0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
80
70
60
50
30
20
10
0
10
MJE3055T
MJE2955T
40
0
125
50
75
100
TC, CASE TEMPERATURE (°C)
25
Figure 2. DC Current Gain
150
175
5.0
10
Figure 3. Power Derating
MJE2955T
MJE3055T
2.0
1.4
TJ = 25°C
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
0.4
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*MJE2955T/D*
MJE2955T/D