BZX84-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type e3 designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series. • The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance. • Silicon Planar Power Zener Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 18078 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Power dissipation 1) Symbol Ptot Value Unit 1) mW 300 Device on fiberglass substrate, see layout. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit RthJA 420 1) °C/W Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C Thermal resistance junction to ambient air 1) Test condition Device on fiberglass substrate, see layout. Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 1 BZX84-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 Dynamic Resistance rzj @ IZT1 Temp. Coefficient of Zener Voltage Test Current Reverse Leakage Current IZT1 αVZ @ IZT1 IZT2 IR @ VR mA 10-4/°C mA µA V min max min max BZX84C2V4-V Z11 2.2 2.6 70 (≤100) 275 5 -9.0 -4.0 1 50 1 BZX84C2V7-V Z12 2.5 2.9 75 (≤100) 300 (≤600) 5 -9.0 -4.0 1 20 1 BZX84C3V0-V Z13 2.8 3.2 80 (≤95) 325 (≤600) 5 -9.0 -3.0 1 10 1 BZX84C3V3-V Z14 3.1 3.5 85 (≤95) 350 (≤600) 5 -8.0 -3.0 1 5 1 BZX84C3V6-V Z15 3.4 3.8 85 (≤90) 375 (≤600) 5 -8.0 -3.0 1 5 1 BZX84C3V9-V Z16 3.7 4.1 85 (≤90) 400 (≤600) 5 -7.0 -3.0 1 3 1 BZX84C4V3-V Z17 4 4.6 80 (≤90) 410 (≤600) 5 -6.0 -1.0 1 3 1 BZX84C4V7-V Z1 4.4 5 50 (≤80) 425 (≤500) 5 -5.0 +2.0 1 3 2 BZX84C5V1-V Z2 4.8 5.4 40 (≤60) 400 (≤480) 5 -3.0 +4.0 1 2 2 BZX84C5V6-V Z3 5.2 6 15 (≤40) 80 (≤400) 5 -2.0 +6.0 1 1 2 BZX84C6V2-V Z4 5.8 6.6 6.0 (≤10) 40 (≤150) 5 -1.0 +7.0 1 3 4 BZX84C6V8-V Z5 6.4 7.2 6.0 (≤15) 30 (≤80) 5 +2.0 +7.0 1 2 4 BZX84C7V5-V Z6 7 7.9 6.0 (≤15) 30 (≤80) 5 +3.0 +7.0 1 1 5 BZX84C8V2-V Z7 7.7 8.7 6.0 (≤15) 40 (≤80) 5 +4.0 +7.0 1 0.7 5 BZX84C9V1-V Z8 8.5 9.6 6.0 (≤15) 40 (≤100) 5 +5.0 +8.0 1 0.5 6 BZX84C10-V Z9 9.4 10.6 8.0 (≤20) 50 (≤150) 5 +5.0 +8.0 1 0.2 7 BZX84C11-V Y1 10.4 11.6 10 (≤20) 50 (≤150) 5 +5.0 +9.0 1 0.1 8 BZX84C12-V Y2 11.4 12.7 10 (≤25) 50 (≤150) 5 +6.0 +9.0 1 0.1 8 BZX84C13-V Y3 12.4 14.1 10 (≤30) 50 (≤170) 5 +7.0 +9.0 1 0.1 8 BZX84C15-V Y4 13.8 15.6 10 (≤30) 50 (≤200) 5 +7.0 +9.0 1 0.05 0.7 VZnom. BZX84C16-V Y5 15.3 17.1 10 (≤40) 50 (≤200) 5 +8.0 +9.5 1 0.05 0.7 VZnom. BZX84C18-V Y6 16.8 19.1 10 (≤45) 50 (≤225) 5 +8.0 +9.5 1 0.05 0.7 VZnom. BZX84C20-V Y7 18.8 21.2 15 (≤55) 60 (≤225) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C22-V Y8 20.8 23.3 20 (≤55) 60 (≤250) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C24-V Y9 22.8 25.6 25 (≤70) 60 (≤250) 5 +8.0 +10 1 0.05 0.7 VZnom. BZX84C27-V Y10 25.1 28.9 25 (≤80) 65 (≤300) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C30-V Y11 28 32 30 (≤80) 70 (≤300) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C33-V Y12 31 35 35 (≤80) 75 (≤325) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C36-V Y13 34 38 35 (≤90) 80 (≤350) 2 +8.0 +10 0.5 0.05 0.7 VZnom. BZX84C39-V Y14 37 41 40 (≤130) 80 (≤350) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C43-V Y15 40 46 45 (≤150) 85 (≤375) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C47-V Y16 44 50 50 (≤170) 85 (≤375) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C51-V Y17 48 54 60 (≤180) 85 (≤400) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C56-V Y18 52 60 70 (≤200) 100 (≤425) 2 +9.0 +11 0.5 0.05 0.7 VZnom. BZX84C62-V Y19 58 66 80 (≤215) 100 (≤450) 2 +9.0 +12 0.5 0.05 0.7 VZnom. BZX84C68-V Y20 64 72 90 (≤240) 150 (≤475) 2 +10 +12 0.5 0.05 0.7 VZnom. BZX84C75-V Y21 70 79 95 (≤255) 170 (≤500) 2 +10 +12 0.5 0.05 0.7 VZnom. www.vishay.com 2 rzj @ IZT2 Ω V Test Current Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 Dynamic Resistance rzj @ IZT1 rzj @ IZT2 Ω V Test Current Temp. Coefficient of Zener Voltage Test Current Reverse Leakage Current IZT1 αVZ @ IZT1 IZT2 IR @ VR mA 10-4/°C mA µA V min max min max BZX84B2V4-V Z50 2.35 2.45 70 (≤100) 275 5 -9 -4 1 50 1 BZX84B2V7-V Z51 2.65 2.75 75 (≤100) 300 (≤600) 5 -9 -4 1 20 1 BZX84B3V0-V Z52 2.94 3.06 80 (≤95) 325 (≤600) 5 -9 -3 1 10 1 BZX84B3V3-V Z53 3.23 3.37 85 (≤95) 350 (≤600) 5 -8 -3 1 5 1 BZX84B3V6-V Z54 3.53 3.67 85 (≤90) 375 (≤600) 5 -8 -3 1 5 1 BZX84B3V9-V Z55 3.82 3.98 85 (≤90) 400 (≤600) 5 -7 -3 1 3 1 BZX84B4V3-V Z56 4.21 4.39 80 (≤90) 410 (≤600) 5 -6 -1 1 3 1 BZX84B4V7-V Z57 4.61 4.79 50 (≤80) 425 (≤500) 5 -5 2 1 3 2 BZX84B5V1-V Z58 5 5.2 40 (≤60) 400 (≤480) 5 -3 4 1 2 2 BZX84B5V6-V Z59 5.49 5.71 15 (≤40) 80 (≤400) 5 -2 6 1 1 2 BZX84B6V2-V Z60 6.08 6.32 6.0 (≤10) 40 (≤150) 5 -1 7 1 3 4 BZX84B6V8-V Z61 6.66 6.94 6.0 (≤15) 30 (≤80) 5 2 7 1 2 4 BZX84B7V5-V Z62 7.35 7.65 6.0 (≤15) 30 (≤80) 5 3 7 1 1 5 BZX84B8V2-V Z63 8.04 8.36 6.0 (≤15) 40 (≤80) 5 4 7 1 0.7 5 BZX84B9V1-V Z64 8.92 9.28 6.0 (≤15) 40 (≤100) 5 5 8 1 0.5 6 BZX84B10-V Z65 9.8 10.2 8.0 (≤20) 50 (≤150) 5 5 8 1 0.2 7 BZX84B11-V Z66 10.8 11.2 10 (≤20) 50 (≤150) 5 5 9 1 0.1 8 BZX84B12-V Z67 11.8 12.2 10 (≤25) 50 (≤150) 5 6 9 1 0.1 8 BZX84B13-V Z68 12.7 13.3 10 (≤30) 50 (≤170) 5 7 9 1 0.1 8 BZX84B15-V Z69 14.7 15.3 10 (≤30) 50 (≤200) 5 7 9 1 0.05 0.7 VZnom. BZX84B16-V Z70 15.7 16.3 10 (≤40) 50 (≤200) 5 8 9.5 1 0.05 0.7 VZnom. BZX84B18-V Z71 17.6 18.4 10 (≤45) 50 (≤225) 5 8 9.5 1 0.05 0.7 VZnom. BZX84B20-V Z72 19.6 20.4 15 (≤55) 60 (≤225) 5 8 10 1 0.05 0.7 VZnom. BZX84B22-V Z73 21.6 22.4 20 (≤55) 60 (≤250) 5 8 10 1 0.05 0.7 VZnom. BZX84B24-V Z74 23.5 24.5 25 (≤70) 60 (≤250) 5 8 10 1 0.05 0.7 VZnom. BZX84B27-V Z75 26.5 27.5 25 (≤80) 65 (≤300) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B30-V Z76 29.4 30.6 30 (≤80) 70 (≤300) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B33-V Z77 32.3 33.7 35 (≤80) 75 (≤325) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B36-V Z78 35.3 36.7 35 (≤90) 80 (≤350) 2 8 10 0.5 0.05 0.7 VZnom. BZX84B39-V Z79 38.2 39.8 40 (≤130) 80 (≤350) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B43-V Z80 42.1 43.9 45 (≤150) 85 (≤375) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B47-V Z81 46.1 47.9 50 (≤170) 85 (≤375) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B51-V Z82 50 52 60 (≤180) 85 (≤400) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B56-V Z83 54.9 57.1 70 (≤200) 100 (≤425) 2 9 11 0.5 0.05 0.7 VZnom. BZX84B62-V Z84 60.8 63.2 80 (≤215) 100 (≤450) 2 9 12 0.5 0.05 0.7 VZnom. BZX84B68-V Z85 66.6 69.4 90 (≤240) 150 (≤475) 2 10 12 0.5 0.05 0.7 VZnom. BZX84B75-V Z86 73.5 76.5 95 (≤255) 170 (≤500) 2 10 12 0.5 0.05 0.7 VZnom. Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 3 BZX84-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18117 18114 Figure 1. Forward characteristics 18115 Figure 4. Dynamic Resistance vs. Zener Current 18118 Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Capacitance vs. Zener Voltage °C 18116 Figure 3. Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 4 18119 Figure 6. Dynamic Resistance vs. Zener Current Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors °C , = 18135 18120 Figure 7. Dynamic Resistance vs. Zener Current Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage °C/W 18124 18121 Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C 18122 18136 Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 85763 Rev. 1.7, 14-Jul-05 Figure 12. Temperature Dependence of Zener Voltage vs. Zener Voltage www.vishay.com 5 BZX84-V-Series Vishay Semiconductors 18126 Figure 13. Change of Zener Voltage vs. Junction Temperature 18137 Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage 18138 Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors 18111 Figure 16. Breakdown Characteristics 18112 Figure 17. Breakdown Characteristics Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 7 BZX84-V-Series Vishay Semiconductors 18113 Figure 18. Breakdown Characteristics Layout for RTheta;JA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) www.vishay.com 8 17451 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 0.95 (.037) 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 9 BZX84-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 Document Number 85763 Rev. 1.7, 14-Jul-05