1N5221B to 1N5267B Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • Standard Zener voltage tolerance is ± 5 % e2 • These diodes are also available in MiniMELF case with the type designation TZM5221 ... TZM5267, SOT23 case with the type designations MMBZ5225 ... MMBZ5267 and SOD123 case with the types designations MMSZ5225 ... MMSZ5267 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367 Applications • Voltage stabilization Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging codes/options: TAP/10 k per Ammopack (52 mm tape), 30 k/box TR/10 k per 13" reel, 30 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Test condition Symbol Value Unit Ptot 500 mW IZ Ptot/VZ mA TL ≤ 25 °C Z-current Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air l = 4 mm, TL = constant Junction temperature Storage temperature range Symbol Value Unit RthJA 300 K/W Tj 175 °C Tstg - 65 to + 175 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85588 Rev. 1.7, 23-Mar-07 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.1 V www.vishay.com 1 1N5221B to 1N5267B Vishay Semiconductors Electrical Characteristics 1N5221B...1N5267B Partnumber Nominal Zener Test Current Voltage1) Maximum Dynamic Impedance1) IZT ZZT at IZT Typical Temperature of Coeffizient ZZK at IZK = 0.25 mA at IZT Maximum Reverse Leakage Current IR VR V mA Ω Ω α (%/K) µA V 1N5221B 2.4 20 30 1200 - 0.085 100 1 1N5222B 2.5 20 30 1250 - 0.085 100 1 1N5223B 2.7 20 30 1300 - 0.080 75 1 1N5224B 2.8 20 30 1400 - 0.080 75 1 1N5225B 3 20 29 1600 - 0.075 50 1 1N5226B 3.3 20 28 1600 - 0.070 25 1 1N5227B 3.6 20 24 1700 - 0.065 15 1 1N5228B 3.9 20 23 1900 - 0.060 10 1 1N5229B 4.3 20 22 2000 + 0.055 5 1 1N5230B 4.7 20 19 1900 + 0.030 5 2 1N5231B 5.1 20 17 1600 + 0.030 5 2 1N5232B 5.6 20 11 1600 + 0.038 5 3 1N5233B 6 20 7 1600 + 0.038 5 3.5 1N5234B 6.2 20 7 1000 + 0.045 5 4 1N5235B 6.8 20 5 750 + 0.050 3 5 1N5236B 7.5 20 6 500 + 0.058 3 6 1N5237B 8.2 20 8 500 + 0.062 3 6.5 1N5238B 8.7 20 8 600 + 0.065 3 6.5 1N5239B 9.1 20 10 600 + 0.068 3 7 1N5240B 10 20 17 600 + 0.075 3 8 1N5241B 11 20 22 600 + 0.076 2 8.4 1N5242B 12 20 30 600 + 0.077 1 9.1 1N5243B 13 9.5 13 600 + 0.079 0.5 9.9 1N5244B 14 9 15 600 + 0.082 0.1 10 1N5245B 15 8.5 16 600 + 0.082 0.1 11 1N5246B 16 7.8 17 600 + 0.083 0.1 12 1N5247B 17 7.4 19 600 + 0.084 0.1 13 1N5248B 18 7 21 600 + 0.085 0.1 14 1N5249B 19 6.6 23 600 + 0.086 0.1 14 1N5250B 20 6.2 25 600 + 0.086 0.1 15 1N5251B 22 5.6 29 600 + 0.087 0.1 17 1N5252B 24 5.2 33 600 + 0.088 0.1 18 1N5253B 25 5 35 600 + 0.089 0.1 19 1N5254B 27 4.6 41 600 + 0.090 0.1 21 1N5255B 28 4.5 44 600 + 0.091 0.1 21 1N5256B 30 4.2 49 600 + 0.091 0.1 23 1N5257B 33 3.8 58 700 + 0.092 0.1 25 1N5258B 36 3.4 70 700 + 0.093 0.1 27 1N5259B 39 3.2 80 800 + 0.094 0.1 30 1N5260B 43 3 93 900 + 0.095 0.1 33 1N5261B 47 2.7 105 1000 + 0.095 0.1 36 1N5262B 51 2.5 125 1100 + 0.096 0.1 39 1N5263B 56 2.2 150 1300 + 0.096 0.1 43 1N5264B 60 2.1 170 1400 + 0.097 0.1 46 www.vishay.com 2 at IZT, VZ Maximum Dynamic Impedance Document Number 85588 Rev. 1.7, 23-Mar-07 1N5221B to 1N5267B Vishay Semiconductors Partnumber Nominal Zener Test Current Maximum Dynamic Voltage1) Impedance1) 1) at IZT, VZ IZT ZZT at IZT Maximum Dynamic Impedance Typical Temperature of Coeffizient ZZK at IZK = 0.25 mA at IZT Maximum Reverse Leakage Current IR VR V mA Ω Ω α (%/K) µA V 1N5265B 62 2 185 1400 + 0.097 0.1 47 1N5266B 68 1.8 230 1600 + 0.097 0.1 52 1N5267B 75 1.7 270 1700 + 0.098 0.1 56 Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W Typical Characteristics VZtn - Relative Voltage Change 500 400 300 l l 200 100 TL = constant 0 15 20 I - Lead Length (mm) 95 9611 0 5 10 Figure 1. Thermal Resistance vs. Lead Length VZ - Voltage Change (mV) 1000 Tj = 25 °C 100 IZ = 5 mA 10 1 0 5 95 9598 10 15 20 25 VZ - Z-Voltage (V) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C Document Number 85588 Rev. 1.7, 23-Mar-07 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 - 60 95 9599 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Ptot - Total Power Dissipation (mW) RthJA - Therm. Resist. Junction Ambient (K/W) Tamb = 25 °C, unless otherwise specified 600 500 400 300 200 100 95 9602 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 4. Total Power Dissipation vs. Ambient Temperature www.vishay.com 3 1N5221B to 1N5267B 15 100 10 80 IZ - Z-Current (mA) TKVZ - Temperature Coefficient of VZ (10-4/K) Vishay Semiconductors 5 IZ = 5 mA 0 -5 10 95 9600 20 40 30 VZ - Z-Voltage (V) 0 6 12 8 20 VZ - Z-Voltage (V) 50 IZ - Z-Current (mA) CD - Diode Capacitance (pF) 4 Figure 8. Z-Current vs. Z-Voltage 150 VR = 2 V Tj = 25 °C 100 50 0 0 10 5 15 20 10 Tj = 25 °C 1 0.1 0.01 0.001 0.4 0.6 20 10 20 0.8 Figure 7. Forward Current vs. Forward Voltage 35 30 1000 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 1.0 VF - Forward Voltage (V) 25 VZ - Z-Voltage (V) Figure 9. Z-Current vs. Z-Voltage rZ - Differential Z-Resistance (Ω) 100 0.2 30 95 9607 Figure 6. Diode Capacitance vs. Z-Voltage 0 Ptot = 500 mW Tamb = 25 °C 40 0 15 25 VZ - Z-Voltage (V) 95 9601 IF - Forward Current (mA) 20 95 9604 200 4 40 50 Figure 5. Temperature Coefficient of Vz vs. Z-Voltage www.vishay.com 60 0 0 95 9605 Ptot = 500 mW Tamb = 25 °C 95 9606 5 10 15 20 25 VZ - Z-Voltage (V) Figure 10. Differential Z-Resistance vs. Z-Voltage Document Number 85588 Rev. 1.7, 23-Mar-07 1N5221B to 1N5267B Zthp - Thermal Resistance for Pulse Cond. (KW) Vishay Semiconductors 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 95 9603 101 102 tP - Pulse Length (ms) Figure 11. Thermal Response Package Dimensions in millimeters (inches): DO35 3.9 max. (0.154) 26 min. (1.024) 1.5 (0.059) 26 min. (1.024) 1.7 (0.067) 0.55 max. (0.022) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85588 Rev. 1.7, 23-Mar-07 www.vishay.com 5 1N5221B to 1N5267B Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1