K6F1616U6C Family CMOS SRAM 16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft November 14, 2003 Preliminary 1.0 Finalize March 31, 2005 Final 2.0 Revised - Added Lead Free Products May 11, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 2 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-FBGA - 6.00x7.00 The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed K6F1616U6C-F Industrial(-40~85°C) 2.7~3.3V 551)/70ns Standby (ISB1, Typ.) Operating (ICC1, Max) 5µA2) 5mA PKG Type 48-FBGA - 6.00x7.00 1. The parameter is measured with 30pF test load. 2. Typical value is measured at VCC=3.0V, TA=25°C and not 100% tested. FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION A 1 2 3 4 5 6 LB OE A0 A1 A2 CS2 Clk gen. B I/O9 UB A3 A4 CS1 Precharge circuit. I/O1 Vcc Vss C I/O10 I/O11 A5 A6 I/O2 I/O3 D Vss I/O12 A17 A7 I/O4 Vcc E Vcc I/O13 NC A16 I/O5 Vss F I/O15 I/O14 A14 A15 I/O6 I/O7 G I/O16 A19 A12 A13 WE I/O8 H A18 A8 A9 A10 A11 NC Row Addresses I/O1~I/O8 Row select Data cont Memory Cell Array I/O Circuit Column select Data cont I/O9~I/O16 Data cont Column Addresses 48-FBGA: Top View (Ball Down) Name Function Name Function CS1 CS2 CS1, CS2 Chip Select Inputs Vcc Power OE OE Output Enable Input Vss Ground WE WE Write Enable Input UB Upper Byte(I/O9~16) LB LB Lower Byte(I/O1~8) NC No Connection A0~A19 Address Inputs I/O1~I/O16 Data Inputs/Outputs Control Logic UB SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 3 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM PRODUCT LIST Industrial Temperature Products(-40~85°C) Part Name Function 48-FBGA, 55ns, 3.0V 48-FBGA, 55ns, 3.0V, LF1) 48-FBGA, 70ns, 3.0V 48-FBGA, 70ns, 3.0V, LF1) K6F1616U6C-FF55 K6F1616U6C-XF55 K6F1616U6C-FF70 K6F1616U6C-XF70 1. LF : Lead Free Product FUNCTIONAL DESCRIPTION CS1 CS2 OE WE LB UB I/O1~8 I/O9~16 Mode Power H X1) X1) X1) X1) X1) High-Z High-Z Deselected Standby X1) L X1) X1) X1) X1) High-Z High-Z Deselected Standby X1) X1) X1) X1) H H High-Z High-Z Deselected Standby L H H H L X1) High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Dout High-Z Lower Byte Read Active L H L H H L High-Z Dout Upper Byte Read Active L H L H L L Dout Dout Word Read Active 1) L H X L L H Din High-Z Lower Byte Write Active L H X1) L H L High-Z Din Upper Byte Write Active L H X1) L L L Din Din Word Write Active 1) 1. X means don′t care. (Must be low or high state) ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Symbol Ratings Unit VIN,VOUT -0.2 to VCC+0.3V(Max. 3.6V) V Voltage on Vcc supply relative to Vss VCC -0.2 to 3.6 V Power Dissipation PD 1.0 W TSTG -65 to 150 °C TA -40 to 85 °C Storage temperature Operating Temperature 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 4 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM RECOMMENDED DC OPERATING CONDITIONS1) Symbol Min Typ Max Unit Supply voltage Item Vcc 2.7 3.0 3.3 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.22) V Input low voltage VIL -0.23) - 0.6 V Note: 1. TA=-40 to 85°C, otherwise specified 2. Overshoot: VCC+2.0V in case of pulse width ≤20ns. 3. Undershoot: -2.0V in case of pulse width ≤20ns. 4. Overshoot and Undershoot are sampled, not 100% tested. CAPACITANCE1) (f=1MHz, TA=25°C) Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF 1. Capacitance is sampled, not 100% tested DC AND OPERATING CHARACTERISTICS Item Test Conditions Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH, VIO=Vss to Vcc -1 - 1 µA ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V - - 5 mA ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH 70ns - - 25 55ns - - 30 Symbol Average operating current Min Typ1) mA Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IOH = -1.0mA 2.4 - - V Standby Current (CMOS) ISB1 Other input =0~Vcc 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or 2) 0V≤CS2≤0.2V(CS2 controlled) - 5.0 25 µA 1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested. 5 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM AC OPERATING CONDITIONS VTM3) TEST CONDITIONS(Test Load and Input/Output Reference) R12) Input pulse level: 0.2V to Vcc-0.2V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL CL1) R22) 1. Including scope and jig capacitance 2. R1=3070Ω, R2=3150Ω 3. VTM =2.8V AC CHARACTERISTICS (Vcc=2.7~3.3V, TA=-40 to 85°C) Speed Bins Parameter List Symbol Write Units 70ns Min Max Min Max tRC 55 - 70 - ns Address access time tAA - 55 - 70 ns Chip select to output tCO - 55 - 70 ns Output enable to valid output tOE - 25 - 35 ns LB, UB valid to data output tBA - 55 - 70 ns Read cycle time Read 55ns Chip select to low-Z output tLZ 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - ns LB, UB enable to low-Z output tBLZ 10 - 10 - ns Output hold from address change tOH 10 - 10 - ns Chip disable to high-Z output tHZ 0 20 0 25 ns OE disable to high-Z output tOHZ 0 20 0 25 ns UB, LB disable to high-Z output tBHZ 0 20 0 25 ns Write cycle time tWC 55 - 70 - ns Chip select to end of write tCW 45 - 60 - ns Address set-up time tAS 0 - 0 - ns Address valid to end of write tAW 45 - 60 - ns Write pulse width tWP 40 - 50 - ns Write recovery time tWR 0 - 0 - ns Write to output high-Z tWHZ 0 20 0 20 ns Data to write time overlap tDW 25 - 30 - ns Data hold from write time tDH 0 - 0 - ns End write to output low-Z tOW 5 - 5 - ns LB, UB valid to end of write tBW 45 - 60 - ns DATA RETENTION CHARACTERISTICS Item Symbol Test Condition Vcc for data retention VDR CS1≥Vcc-0.2V , VIN≥0V Data retention current IDR Vcc=1.5V, CS1≥Vcc-0.2V , VIN≥0V Data retention set-up time tSDR Recovery time tRDR 1) 1) See data retention waveform Min Typ Max Unit 1.5 - 3.3 V 15 µA - 1.0 0 - - tRC - - 2) ns 1. 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or 2) 0≤CS2≤0.2V(CS2 controlled) 2. Typical value are measured at TA=25°C and not 100% tested. 6 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL) tRC Address tAA tOH Data Out Data Valid Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tOH tAA tCO CS1 CS2 tHZ tBA UB, LB tBHZ tOE OE Data out High-Z tOLZ tBLZ tLZ tOHZ Data Valid NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 7 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) tWC Address tCW(2) tWR(4) CS1 CS2 tAW tBW UB, LB tWP(1) WE tAS(3) tDW Data in High-Z tDH tWHZ Data out High-Z Data Valid tOW Data Undefined TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled) tWC Address tAS(3) tCW(2) tWR(4) CS1 tAW CS2 tBW UB, LB tWP(1) WE tDW Data Valid Data in Data out tDH High-Z High-Z 8 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled) tWC Address tCW(2) tWR(4) CS1 tAW CS2 tBW UB, LB tAS(3) tWP(1) WE tDW Data Valid Data in Data out tDH High-Z High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS1 and low WE. A write begins when CS1 goes low and WE goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS1 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS1 going low to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS1 or WE going high. DATA RETENTION WAVEFORM CS1 controlled VCC tSDR Data Retention Mode tRDR 2.7V 2.2V VDR CS1≥VCC - 0.2V CS1 GND CS2 controlled Data Retention Mode VCC 2.7V CS2 tSDR tRDR VDR CS2≤0.2V 0.4V GND 9 Revision 2.0 May 2005 K6F1616U6C Family CMOS SRAM PACKAGE DIMENSION Unit: millimeters 48 BALL FINE PITCH BGA(0.75mm ball pitch) Top View Bottom View B B1 B 6 5 4 3 2 1 A B #A1 C C C C1 D E F G H Detail A Side View A E E1 E1 D Y C Min Typ Max A - 0.75 - B 5.90 6.00 6.10 1. Bump counts: 48(8 row x 6 column) B1 - 3.75 - 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.) C 6.90 7.00 7.10 C1 - 5.25 - D 0.40 0.45 0.50 E - - 1.00 E1 0.25 - - Y - - 0.10 Notes. 3. All tolerance are ±0.050 unless specified beside figure. 4. Typ: Typical 5. Y is coplanarity: 0.10(Max) 10 Revision 2.0 May 2005