VISHAY MMBD7000-V

MMBD7000-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode, especially
suited for automatic insertion
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
3
1
2
18109
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
MMBD7000-V
Ordering code
Type Marking
Remarks
MMBD7000-V-GS18 or MMBD7000-V-GS08
M5C
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Reverse voltage
VR
100
V
Forward current (continuous)
IF
200
mA
IFSM
500
mA
Ptot
225
mW
Ptot
1.8
mW/K
Ptot
300
mW
Ptot
2.4
mW/K
Non-repetitive peak forward
current
Power dissipation
on FR-5 board
Total device dissipation
on Alumina substrate
Document Number 85736
Test condition
t=1s
Derate above 25 °C
Derate above 25 °C
Unit
www.vishay.com
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 13-May-11
MMBD7000-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
4171)
K/W
RthJA
5562)
K/W
Tj
150
°C
Tstg
- 55 to + 150
°C
Typical thermal resistance,
junction to ambient air
Maximum junction temperature
Storage temperature range
1)
Device on alumina substrate
2)
On FR-5 board
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max.
Unit
1
A
IR
3
A
VR = 50 V, Tj = 125 ° C
IR
100
A
IF = 1 mA
VF
0.55
0.70
V
IF = 10 mA
VF
0.67
0.82
V
IF = 100 mA
VF
0.75
1.10
V
VR = 0, f = 1 MHz
CD
1.5
pF
IF = 10 mA to IR = 10 mA,
Irr = 1 mA, RL = 100 
Irr
4
ns
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Test condition
Symbol
Min.
IR = 100 A
V(BR)
100
VR = 50 V
IR
VR = 100 V
Typ.
V
Package Dimensions in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
www.vishay.com
For technical questions within your region, please contact one of the following: Document Number 85736
[email protected], [email protected], [email protected]
Rev. 1.4, 13-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000