K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit QDR TM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm Oct. 20, 2001 Advance 0.2 1. 2. 3. 4. 5. 6. Dec. 5, 2001 Preliminary 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams July, 29. 2002 Preliminary 0.4 1. 2. 3. 4. Add -FC25 part(AC Characteristics) Add AC electrical characteristics. Change AC timing characteristics Change DC electrical characteristics(ISB1) Sep. 6. 2002 Preliminary 0.5 1. 2. 3. 4. Change the data Setup/Hold time. Change the Access Time.(tCHQV, tCHQX, etc.) Change the Clock Cycle Time.(MAX value of tKHKH) Change the JTAG instruction coding. Oct. 7. 2002 Preliminary 0.6 1. Change the Boundary scan exit order. 2. Change the AC timing characteristics(-25, -20) 3. Correct the Overshoot and Undershoot timing diagrams. Dec. 16, 2002 Preliminary 0.7 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary 0.8 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 3. Change the Isb1 current Mar. 20, 2003 Preliminary 0.9 1. Change the Maximum Clock cycle time. 2. Correct the 165FBGA package ball size. April. 4, 2003 Preliminary 1.0 1. Final spec release Aug. 28, 2003 Final 2.0 1. Delete the x8 Org. part Dec. 1, 2003 Final Rev. No. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Update JTAG test conditions. Reserved pin for high density name change from NC to Vss/SA Delete AC test condition about Clock Input timing Reference Level Delete clock description on page 2 and add HSTL I/O comment The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36-bit, 2Mx18-bit QDRTM II b4 SRAM FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write operation • HSTL I/O • Full data coherency, providing most current data . • Synchronous pipeline read with self timed late write. • Registered address, control and data input/output. • DDR(Double Data Rate) Interface on read and write ports. • Fixed 4-bit burst for both read and write operation. • Clock-stop supports to reduce current. • Two input clocks(K and K) for accurate DDR timing at clock rising edges only. • Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches. • Two echo clocks (CQ and CQ) to enhance output data traceability. • Single address bus. • Byte write (x18, x36) function. • Sepatate read/write control pin(R and W) • Simple depth expansion with no data contention. • Programmable output impenance. • JTAG 1149.1 compatible test access port. • 165FBGA(11x15 ball aray FBGA) with body size of 15x17mm Part Number Cycle Time Access Time Unit K7R323684M-FC25 4.0 0.45 ns K7R323684M-FC20 5.0 0.45 ns K7R323684M-FC16 6.0 0.50 ns K7R321884M-FC25 4.0 0.45 ns K7R321884M-FC20 5.0 0.45 ns K7R321884M-FC16 6.0 0.50 ns Organization X36 X18 FUNCTIONAL BLOCK DIAGRAM CTRL LOGIC 4 (or 2) K K C 1Mx36 (2Mx18) MEMORY ARRAY 72 (or 36) 72 (or 36) 144 (or 72) O UTPUT DRIV ER W BW X WRITE DRIVER 18 (or 19) OUTPUT S ELECT R ADD REG 72(or 36) OUTPUT REG ADDRESS 72(or 36) SENSE AMPS 18 (or 19) DATA REG WRITE/READ DECO DE 36 (or 18) D(Data in) 36 (or 18) Q(Data Out) CQ, CQ (Echo Clock out) CLK GEN SELECT OUTPUT CONTROL C Notes: 1. Numbers in ( ) are for x18 device QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Hitachi, IDT, Micron, NEC and Samsung techno logy. -2- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM PIN CONFIGURATIONS(TOP VIEW) 1 2 3 A CQ V SS /SA* B Q27 Q18 C D27 D D28 E F G D30 H Doff K7R323684M(1Mx36) 4 5 6 7 8 9 10 11 NC/SA* W BW 2 K BW 1 D18 SA BW 3 K BW 0 R SA V SS /SA* CQ SA D17 Q17 Q8 Q28 D19 V SS SA NC SA V SS D20 Q19 V SS V SS V SS V SS V SS D16 Q7 D8 Q16 D15 D7 Q29 D29 Q20 V DDQ V SS V SS V SS V DDQ Q30 Q21 D21 V DDQ V DD V SS V DD V DDQ Q15 D6 Q6 D14 Q14 Q5 D22 Q22 V DDQ V DD V SS V DD V DDQ Q13 D13 D5 V REF V DDQ V DDQ V DD V SS V DD V DDQ V DDQ V REF ZQ J D31 Q31 D23 V DDQ V DD V SS V DD V DDQ D12 Q4 D4 K Q32 D32 Q23 V DDQ V DD V SS V DD V DDQ Q12 D3 Q3 L Q33 Q24 D24 V DDQ V SS V SS V SS V DDQ D11 Q11 Q2 M D33 Q34 D25 V SS V SS V SS V SS V SS D10 Q1 D2 N D34 D26 Q25 V SS SA SA SA V SS Q10 D9 D1 P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C SA SA SA TMS TDI Notes : 1. * Checked No Connect(NC) or Vss pins are reserved for higher density address, i.e. 3A for 72Mb, 10A for 144Mb and 2A for 288Mb. 2. BW 0 controls write to D0:D8, BW 1 controls write to D9:D17, BW 2 controls write to D18:D26 and BW 3 controls write to D27:D35. PIN NAME SYMBOL PIN NUMBERS DESCRIPTION K, K 6B, 6A Input Clock NOTE C, C 6P, 6R Input Clock for Output Data CQ, CQ 11A, 1A Output Echo Clock 1 Doff 1H DLL Disable when low SA 9A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R Address Inputs D0-35 10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P Data Inputs Q0-35 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N 3P,1B,2C,1E,1F,2J,1K,1L,2M,1P Data Outputs W 4A Write Control Pin,active when low R 8A Read Control Pin,active when low B W0, BW 1,BW 2 , B W3 7B,7A,5A,5B Block Write Control Pin,active when low V REF 2H,10H Input Reference Voltage ZQ 11H Output Driver Impedance Control Input V DD 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K Power Supply ( 1.8 V ) V DDQ 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L Output Power Supply ( 1.5V or 1.8V ) V SS 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N Ground TMS 10R JTAG Test Mode Select TDI 11R JTAG Test Data Input TCK 2R JTAG Test Clock TDO 1R JTAG Test Data Output NC 3A,6C No Connect 2 3 Notes: 1. C, C, K or K cannot be set to VREF voltage. 2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected. 3. Not connected to chip pad internally. -3- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM PIN CONFIGURATIONS(TOP VIEW) K7R321884M(2Mx18) 1 2 3 4 5 6 A CQ V SS /SA* B NC Q9 C NC D NC E NC F NC 7 8 9 10 11 SA W BW 1 K NC D9 SA NC K BW 0 R SA V SS /SA* CQ SA NC NC Q8 NC D10 V SS SA NC SA V SS D11 Q10 V SS V SS V SS V SS V SS NC Q7 D8 NC NC D7 NC Q11 V DDQ V SS V SS V SS V DDQ Q12 D12 V DDQ V DD V SS V DD V DDQ NC D6 Q6 NC NC Q5 G NC D13 Q13 V DDQ V DD V SS V DD V DDQ NC NC D5 H Doff V REF V DDQ V DDQ V DD V SS V DD V DDQ V DDQ V REF ZQ J NC NC D14 V DDQ V DD V SS V DD V DDQ NC Q4 D4 K NC NC Q14 V DDQ V DD V SS V DD V DDQ NC D3 Q3 L NC Q15 D15 V DDQ V SS V SS V SS V DDQ NC NC Q2 M NC NC D16 V SS V SS V SS V SS V SS NC Q1 D2 N NC D17 Q16 V SS SA SA SA V SS NC NC D1 P NC NC Q17 SA SA C SA SA NC D0 Q0 R TDO TCK SA SA SA C SA SA SA TMS TDI Notes: 1. * Checked No Connect(NC) or Vss pins are reserved for higher density address, i.e. 10A for 72Mb and 2A for 144Mb. 2. BW 0 controls write to D0:D8 and BW 1 controls write to D9:D17. PIN NAME SYMBOL PIN NUMBERS DESCRIPTION K, K 6B, 6A Input Clock NOTE C, C 6P, 6R Input Clock for Output Data CQ, CQ 11A, 1A Output Echo Clock Doff 1H DLL Disable when low SA 3A,9A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R Address Inputs D0-17 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D 3F,2G,3J,3L,3M,2N Data Inputs Q0-17 11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E 2F,3G,3K,2L,3N,3P Data Outputs W 4A Write Control Pin,active when low R 8A Read Control Pin,active when low B W0, BW 1 7B, 5A Block Write Control Pin,active when low V REF 2H,10H Input Reference Voltage ZQ 11H Output Driver Impedance Control Input V DD 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K Power Supply ( 1.8 V ) V DDQ 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L Output Power Supply ( 1.5V or 1.8V ) V SS 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N Ground TMS 10R JTAG Test Mode Select TDI 11R JTAG Test Data Input TCK 2R JTAG Test Clock TDO 1R JTAG Test Data Output NC 7A,1B,5B,9B,10B,1C,2C,6C,9C,1D,9D,10D,1E,2E,9E,1F 9F,10F,1G,9G,10G,1J,2J,9J,1K,2K,9K,1L,9L,10L,1M 2M,9M,1N,9N,10N,1P,2P,9P No Connect 1 2 3 Notes: 1. C, C, K or K cannot be set to V R E F voltage. 2. When ZQ pin is directly connected to VD D output impedance is set to minimum value and it cannot be connected to ground or left unconnected. 3. Not connected to chip pad internally. -4- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM GENERAL DESCRIPTION The K7R323684M and K7R321884M are37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684M and 2,097,152 words by 18 bits for K7R321884M. The QDR operation is possible by supporting DDR read and write operations through separate data output and input ports with the same cycle. Memory bandwidth is maxmized as data can be transfered into sram on every rising edge of K and K , and transfered out of sram on every rising edge of C and C. And totally independent read and write ports eliminate the need for high speed bus turn around. Address for read and write are latched on alternate rising edges of the input clock K. Data inputs, and all control signals are synchronized to the input clock ( K or K ). Normally data outputs are synchronized to output clocks ( C and C ), but when C and C are tied high, the data outputs are synchronized to the input clocks ( K and K ). Read data are referenced to echo clock ( CQ or CQ ) outputs. Common address bus is used to access address both for read and write operations. The internal burst counter is fiexd to 4-bit sequential for both read and write operations, reguiring tow full clock bus cycles. Any request that attempts to interrupt a burst operation in progress is ignored. Synchronous pipeline read and late write enable high speed operations. Simple depth expansion is accomplished by using R and W for port selection. Byte write operation is supported with BW 0 and BW 1 ( BW 2 and B W3 ) pins. Nybble write operation is supported with NW 0 and NW1 pins for x8 device. IEEE 1149.1 serial boundary scan (JTAG) simplifies monitoring package pads attachment status with system. The K7R323684M and K7R321884M are implemented with SAMSUNG's high performance 6T CMOS technology and is available in 165pin FBGA packages. Multiple power and ground pins minimize ground bounce. Read Operations Read cycles are initiated by activating R at the rising edge of the positive input clock K. Address is presented and stored in the read address register synchronized with K clock. For 4-bit burst DDR operation, it will access four 36-bit or 18-bit or 8-bit data words with each read command. The first pipelined data is transfered out of the device triggered by C clock following next K clock rising edge. Next burst data is triggered by the rising edge of following C clock rising edge. The process continues until all four data are transfered. Continuous read operations are initated with K clock rising edge. And pipelined data are transferred out of device on every rising edge of both C and C clocks. In case C and C tied to high, output data are triggered by K and K insted of C and C. When the R is disabled after a read operation,the K7R323684M and K7R321884M will first complete burst read operation before entering into deselect mode at the next K clock rising edge. Then output drivers disabled automatically to high impedance state. Echo clock operation To assure the output tracibility, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ, which are synchronized with internal data output. Echo clocks run free during normal operation. The Echo clock is triggered by internal output clock signal, and transfered to external through same structures as output driver. -5- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM Write Operations Write cycles are initiated by activating W at the rising edge of the positive input clock K. Address is presented and stored in the write address register synchronized with K clock. For 4-bit burst DDR operation, it will write four 36-bit or 18-bit or 8-bit data words with each write command. The first "late" data is transfered and registered in to the device synchronous with next K clock rising edge. Next burst data is transfered and registered synchronous with following K clock rising edge. The process continues until all four data are transfered and registered. Continuous write operations are initated with K rising edge. And "late writed" data is presented to the device on every rising edge of both K and K clocks. The device disregards input data presented on the same cycle W disabled. When the W is disabled after a read operation, the K7R323684M and K7R321884M will first complete burst read operation before entering into deselect mode at the next K clock rising edge. The K7R323684M and K7R321884M support byte write operations. With activating BW 0 or BW 1 ( BW 2 or BW 3 ) in write cycle, only one byte of input data is presented. In K7R321884M, BW 0 controls write operation to D0:D8, BW 1 controls write operation to D9:D17. And in K7R323684M BW 2 controls write operation to D18:D26, BW 3 controls write operation to D27:D35. Programmable Impedance Output Buffer Operation The designer can program the SRAM's output buffer impedance by terminating the ZQ pin to VSS through a precision resistor(RQ). The value of RQ (within 15%) is five times the output impedance desired. For example, 250Ω resistor will give an output impedance of 50Ω. Impedance updates occur early in cycles that do not activate the outputs, such as deselect cycles. In all cases impedance updates are transparent to the user and do not produce access time "push-outs" or other anomalous behavior in the SRAM. There are no power up requirements for the SRAM. However, to guarantee optimum output driver impedance after power up, the SRAM needs 1024 non-read cycles. Single Clock Mode The K7R323684M and K7R321884M can be operated with the single clock pair K and K, insted of C or C for output clocks. To operate these devices in single clock mode, C and C must be tied high during power up and must be maintained high during operation. After power up, this device can’t change to or from single clock mode. System flight time and clock skew could not be compensated in this mode. Depth Expansion Separate input and output ports enables easy depth expansion. Each port can be selected and deselected independently and read and write operation do not affect each other. Before chip deselected, all read and write pending operations are completed. Power-Up/Power-Down Supply Voltage Sequencing The following power-up supply voltage application is recommended: V SS, V DD, V DDQ, V REF, then VIN. VDD and V DDQ can be applied simultaneously, as long as VDDQ does not exceed V DD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, V DDQ , VDD, V SS. VDD and VDDQ can be removed simultaneously, as long as V DDQ does not exceed V DD by more than 0.5V during power-down. -6- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM STATE DIAGRAM POWER-UP READ NOP READ WRITE WRITE READ READ D count=2 LOAD NEW READ ADDRESS D count=0 ALWAYS LOAD NEW WRITE ADDRESS D count=0 WRITE D count=2 READ D count=2 DDR READ D count=D count+1 READ D count=1 WRITE NOP WRITE D count=2 ALWAYS DDR WRITE D count=D count+1 ALWAYS ALWAYS INCREMENT READ ADDRESS WRITE D count=1 INCREMENT WRITE ADDRESS Notes : 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1. 2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case. 3. Read and write state machine can be active simulateneously. 4. State machine control timing sequence is controlled by K. -7- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM TRUTH TABLES SYNCHRONOUS TRUTH TABLE K R D W Q OPERATION D(A1) D(A2) D(A3) D(A4) Q(A1) Q(A2) Q(A3) Q(A4) Stopped X X Previous state Previous state Previous state Previous state Previous state Previous state Previous state Previous state Clock Stop ↑ H H X X X X High-Z High-Z High-Z High-Z No Operation ↑ L4 X X X X X D OUT at C(t+1) D OUT at C(t+2) D OUT at C(t+2) DOUT at C(t+3) Read ↑ H5 L4 Din at K(t+1) Din at K(t+1) Din at K(t+2) Din at K(t+2) X X X X Write Notes: 1. X means "Don ′t Care". 2. The rising edge of clock is symbolized by ( ↑ ). 3. Before enter into clock stop status, all pending read and write operations will be completed. 4. This signal was HIGH on previous K clock rising edge. Initating consecutive READ or WRITE operations on consecuti ve K clock rising edges is not permitted. The device will ignore the second request. 5. If this signal was LOW to inititate the previous cycle, this signal becomes a don′t care for this operation however it is strongly recommended that this signal is brought HIGH as shown in the truth table. WRITE TRUTH TABLE(x18) K K ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ BW0 BW 1 OPERATION L L WRITE ALL BYTEs ( K↑ ) L L WRITE ALL BYTEs ( K↑ ) L H WRITE BYTE 0 ( K ↑ ) L H WRITE BYTE 0 ( K ↑ ) H L WRITE BYTE 1 ( K ↑ ) H L WRITE BYTE 1 ( K ↑ ) H H WRITE NOTHING ( K↑ ) H H WRITE NOTHING ( K↑ ) Notes: 1. X means "Don′t Care". 2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K ( ↑ ). 3. Assumes a WRITE cycle was initiated. 4. This table illustates operation for x18 devices. WRITE TRUTH TABLE(x36) K K ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ BW0 BW 1 BW2 BW 3 OPERATION L L L L WRITE ALL BYTEs ( K↑ ) L L L L WRITE ALL BYTEs ( K↑ ) L H H H WRITE BYTE 0 ( K↑ ) L H H H WRITE BYTE 0 ( K↑ ) H L H H WRITE BYTE 1 ( K↑ ) H L H H WRITE BYTE 1 ( K↑ ) H H L L WRITE BYTE 2 and BYTE 3 ( K↑ ) H H L L WRITE BYTE 2 and BYTE 3 ( K↑ ) H H H H WRITE NOTHING ( K↑ ) H H H H WRITE NOTHING ( K↑ ) Notes: 1. X means "Don′t Care". 2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K ( ↑ ). 3. Assumes a WRITE cycle was initiated. -8- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM ABSOLUTE MAXIMUM RATINGS* SYMBOL RATING UNIT Voltage on V DD Supply Relative to V SS PARAMETER V DD -0.5 to 2.9 V Voltage on V DDQ Supply Relative to V SS V DDQ -0.5 to V DD V V IN -0.5 to VDD+0.3 V Storage Temperature TSTG -65 to 150 °C Operating Temperature T OPR 0 to 70 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C Voltage on Input Pin Relative to VSS *Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operati ng sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDDQ must not exceed VD D during normal operation. DC ELECTRICAL CHARACTERISTICS (VDD =1.8V ±0.1V , T A=0°C to +70°C) PARAMETER SYMBOL TEST CONDITIONS Input Leakage Current IIL V DD=Max ; V IN=V SS to V DDQ Output Leakage Current IOL Output Disabled, Operating Current (x36): DDR Operating Current (x18): DDR Standby Current(NOP): DDR ICC ICC ISB1 MIN MAX UNIT -2 +2 µA µA -2 +2 -25 - 800 -20 - 700 -16 - 600 -25 - 750 -20 - 650 -16 - 550 Device deselected, -25 - 330 IOUT=0mA, f=Max, -20 - 300 All Inputs≤ 0.2V or ≥ V DD-0.2V -16 - 270 V DD=Max , IOUT=0mA Cycle Time ≥ tKHKH Min V DD=Max , IOUT=0mA Cycle Time ≥ tKHKH Min NOTES mA 1,5 mA 1,5 mA 1,6 Output High Voltage V OH1 V DDQ /2-0.12 V DDQ/2+0.12 V 2,7 Output Low Voltage V OL1 V DDQ /2-0.12 V DDQ/2+0.12 V 3,7 Output High Voltage V OH2 IOH=-1.0mA V DDQ-0.2 V DDQ V 4 Output Low Voltage V OL2 IOL =1.0mA V SS 0.2 V 4 Input Low Voltage V IL -0.3 V REF-0.1 V 8,9 Input High Voltage V IH V REF+0.1 V DDQ +0.3 V 8,10 Notes: 1. Minimum cycle. IOUT =0mA. 2. |I OH |=(VDDQ /2)/(RQ/5) ±15% for 175 Ω ≤ RQ ≤ 350Ω . 3. |I OL |=(VDDQ /2)/(RQ/5) ±15% for 175Ω ≤ RQ ≤ 350Ω. 4. Minimum Impedance Mode when ZQ pin is connected to VDDQ . 5. Operating current is calculated with 50% read cycles and 50% write cycles. 6. Standby Current is only after all pending read and write burst opeactions are completed. 7. Programmable Impedance Mode. 8. These are DC test criteria. DC design criteria is V R E F±50mV. The AC VIH /VIL levels are defined separately for measuring timing parameters. 9. VIL (Min)DC= -0.3V, V IL (Min)AC=-1.5V(pulse width ≤ 3ns). 10. VIH (Max)DC=V DDQ +0.3, V IH (Max)AC= V DDQ +0.85V(pulse width ≤ 3ns). -9- Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM AC ELECTRICAL CHARACTERISTICS (VDD=1.8V ±0.1V, TA =0°C to +70°C) PARAMETER MAX UNIT NOTES V REF + 0.2 - V 1,2 - V REF - 0.2 V 1,2 SYMBOL MIN Input High Voltage V IH (AC) Input Low Voltage V IL (AC) Notes: 1. This condition is for AC function test only, not for AC parameter test. 2. To maintain a valid level, the transitioning edge of the input must : a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC) b) Reach at least the target AC level c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or V IH(DC) Overershoot Timing Undershoot Timing 20% t KHKH (MIN) V IH V DDQ+0.5V V DDQ +0.25V V SS V DDQ V SS-0.25V V SS-0.5V 20% tKHKH (MIN) V IL Note: For power-up, V IH ≤ VDDQ +0.3V and V D D ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C) PARAMETER SYMBOL MIN MAX UNIT V DD 1.7 1.9 V V DDQ 1.4 1.9 V Reference Voltage V REF 0.68 0.95 V Ground V SS 0 0 V Supply Voltage AC TEST CONDITIONS Parameter Core Power Supply Voltage Symbol Value Unit V DD 1.7~1.9 V Output Power Supply Voltage V DDQ 1.4~1.9 V Input High/Low Level V IH/VIL 1.25/0.25 V Input Reference Level V REF 0.75 V Input Rise/Fall Time T R/TF 0.3/0.3 ns V DDQ/2 V Output Timing Reference Level AC TEST OUTPUT LOAD VREF 0.75V VDDQ/2 50Ω SRAM Zo=50Ω 250Ω ZQ Note: Parameters are tested with RQ=250Ω - 10 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM AC TIMING CHARACTERISTICS (VDD =1.8V±0.1V, TA=0°C to +70°C) PARAMETER SYMBOL -25 -20 -16 UNITS NOTES MIN MAX MIN MAX MIN MAX 4.00 6.30 5.00 7.88 6.00 8.40 ns 0.20 ns Clock Clock Cycle Time (K, K, C, C) tKHKH Clock Phase Jitter (K, K, C, C) tKC var Clock High Time (K, K , C, C) tKHKL 1.60 2.00 2.40 ns Clock Low Time (K, K, C, C) tKLKH 1.60 2.00 2.40 ns Clock to Clock (K↑ → K↑, C↑ → C↑) tKHKH 1.80 Clock to data clock (K ↑ → C↑, K↑→ C↑) tKHCH 0.00 DLL Lock Time (K, C) tKC lock 1024 1024 1024 cycle K Static to DLL reset tKC reset 30 30 30 ns 0.20 0.20 2.20 1.80 0.00 2.70 2.30 0.00 5 ns 2.80 ns 6 Output Times C, C High to Output Valid tCHQV 0.45 -0.45 0.45 C, C High to Output Hold tCHQX C, C High to Echo Clock Valid tCHCQV -0.45 C, C High to Echo Clock Hold tCHCQX CQ, CQ High to Output Valid tCQHQV CQ, CQ High to Output Hold tCQHQX C, High to Output High-Z tCHQZ C, High to Output Low-Z tCHQX1 -0.45 -0.45 Address valid to K rising edge tAVKH 0.50 Control inputs valid to K rising edge tIVKH 0.50 Data-in valid to K, K rising edge tDVKH K rising edge to address hold K rising edge to control inputs hold K, K rising edge to data-in hold 0.45 -0.45 -0.50 0.45 -0.45 0.30 -0.30 0.50 0.50 -0.50 0.35 -0.35 0.45 3 ns 3 ns ns 0.40 -0.40 0.45 ns ns ns 0.50 ns 3 -0.50 ns 3 0.60 0.70 ns 0.60 0.70 ns 0.35 0.40 0.50 ns tKHAX 0.50 0.60 0.70 ns tKHIX 0.50 0.60 0.70 ns tKHDX 0.35 0.40 0.50 ns Setup Times 2 Hold Times 2 Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges. 2. Control signal are R and W. In case of BW 0 ,BW 1 (BW 2 , BW 3 , also for x36) signal follow the data setup/hold times. 3. If C,C are tied high, K, K become the references for C,C timing parameters. 4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention beacuse tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0 °C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70 °C, 1.7V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. 5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable. - 11 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM PIN CAPACITANCE PRMETER SYMBOL TESTCONDITION TYP MAX Unit C IN V IN=0V 4 5 pF Input and Output Capacitance C OUT V OUT =0V 6 7 pF Clock Capacitance CCLK - 5 6 pF Address Control Input Capacitance NOTES Note: 1. Parameters are tested with RQ=250 Ω and V DDQ=1.5V. 2. Periodically sampled and not 100% tested. THERMAL RESISTANCE SYMBOL TYP Unit Junction to Ambient PRMETER θ JA 20.8 Junction to Case θJC 2.3 °C/W °C/W Junction to Pins θ JB 4.3 °C/W NOTES Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site thermal impedance. TJ=T A + PD x θ JA APPLICATION INRORMATION R=250Ω ZQ R=250Ω SRAM#1 Vt D SA R CQ CQ Q R W BW0 BW1 C C K K Data In Data Out Address R W BW SRAM#4 CQ CQ Q RW BW 0 BW1 C C K K D SA R ZQ ZQ Vt Vt MEMORY CONTROLLER Return CLK Source CLK Return CLK Source CLK SRAM1 SRAM1 SRAM4 SRAM4 Input Input Input Input Vt Vt R=50Ω Vt=VREF CQ CQ CQ CQ - 12 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM TIMING WAVE FORMS OF READ AND NOP READ READ NOP NOP t KHKH t KLKH K t KH K H t KHKL K t A V K H t KHAX A1 SA A2 t IVKH tKHIX R tCHQX 1 Q1-1 Q (Data Out) tKHKH tKHCH t CHQV Q1-2 Q1-3 Q1-4 Q2-1 Q2-2 Q2-3 Q2-4 tCHQX t KLKH C tKHKL tK H KH t CHQZ C t CHCQV tC H Q V t C QHQV CQ t CHCQX tC Q H Q X t CHCQV tC H C Q X CQ Don ′t Care Undefined Note : 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0. 2. Outputs are disabled one cycle after a NOP. TIMING WAVE FORMS OF WRITE AND NOP WRITE WRITE NOP NOP t KHKH t KLKH K t KHKL t KH K H K t AVKH tK H A X A1 SA A2 t IVKH tKHIX tKHIX W D(Data In) D1-1 D1-2 D1-3 D1-4 D2-1 tDVKH D2-2 D2-3 D2-4 tKHDX Don ′t Care Undefined Note: 1. D1-1 refers to input to address A1+0, D1-2 refers to input to address A1+1, i.e the next internal burst address following A1+0. 2. BWx ( NWx ) assumed active. - 13 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM TIMING WAVE FORMS OF READ, WRITE AND NOP READ WRITE READ WRITE NOP NOP K K A1 SA A2 A3 A4 W R D(Data In) D2-1 D2-2 D2-3 D2-4 D4-1 D4-2 D4-3 D(Data Out) Q1-1 Q1-2 Q1-3 Q1-4 Q3-1 Q3-2 Q3-3 C C Don′t Care Undefined Note: 1. If address A3=A2, data Q3-1=D2-1, data Q3-2=D2-2 , data Q3-3=D2-3, data Q3-4=D2-4 Write data is forwarded immediately as read results. 2.BWx ( NWx ) assumed active. - 14 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Access Port(TAP). The package pads are monitored by the Serial Scan circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not driven out of the SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be tied to VDD through a resistor. TDO should be left unconnected. JTAG Block Diagram JTAG Instruction Coding IR2 IR1 IR0 Instruction TDO Output Notes 0 0 0 EXTEST Boundary Scan Register 1 0 0 1 IDCODE Identification Register 3 0 1 0 SAMPLE-Z Boundary Scan Register 2 A,D 0 1 1 RESERVED Do Not Use 6 K,K 1 0 0 SAMPLE Boundary Scan Register 5 1 0 1 RESERVED Do Not Use 6 1 1 0 RESERVED Do Not Use 6 1 1 1 BYPASS Bypass Register 4 C,C SRAM CORE Q CQ CQ TDI BYPASS Reg. TDO Identification Reg. Instruction Reg. Control Signals TMS TCK TAP Controller NOTE : 1. Places DQs in Hi-Z in order to sample all input data regardless of other SRAM inputs. This instruction is not IEEE 1149.1 compliant. 2. Places DQs in Hi-Z in order to sample all input data regardless of other SRAM inputs. 3. TDI is sampled as an input to the first ID register to allow for the serial shift of the external TDI data. 4. Bypass register is initiated to V SS when BYPASS instruction is invoked. The Bypass Register also holds serially loaded TDI when exiting the Shift DR states. 5. SAMPLE instruction dose not places DQs in Hi-Z. 6. This instruction is reserved for future use. TAP Controller State Diagram 1 Test Logic Reset 0 0 Run Test Idle 1 1 Select DR 0 Exit2 DR 1 1 Update DR 0 - 15 - 1 Capture IR 0 0 Shift IR 1 1 Exit1 DR 0 Pause DR 1 Select IR 0 1 Capture DR 0 Shift DR 1 1 1 0 0 0 Exit1 IR 0 Pause IR 1 Exit2 IR 1 Update IR 1 0 0 0 Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM SCAN REGISTER DEFINITION Part Instruction Register Bypass Register ID Register Boundary Scan 1Mx36 3 bits 1 bit 32 bits 109 bits 2Mx18 3 bits 1 bit 32 bits 109 bits ID REGISTER DEFINITION Part Revision Number (31:29) Part Configuration (28:12) Samsung JEDEC Code (11: 1) Start Bit(0) 1Mx36 000 00def0wx0t0q0b0s0 00001001110 1 2Mx18 000 00def0wx0t0q0b0s0 00001001110 1 Note : Part Configuration /def=010 for 36Mb, /wx=11 for x36, 10 for x18 /t=1 for DLL Ver., 0 for non-DLL Ver. /q=1 for QDR, 0 for DDR /b=1 for 4Bit Burst, 0 for 2Bit Burst /s=1 for Separate I/O, 0 for Common I/O BOUNDARY SCAN EXIT ORDER ORDER PIN ID ORDER PIN ID 1 2 3 4 5 6 7 6R 6P 6N 7P 7N 7R 8R 37 38 39 10D 9E 10C 8 9 10 11 12 13 14 15 8P 9R 11P 10P 10N 9P 10M 11N 40 41 42 43 44 45 46 47 48 11D 9C 9D 11B 11C 9B 10B 11A 10A 16 17 18 19 20 21 22 23 24 9M 9N 11L 11M 9L 10L 11K 10K 9J 49 50 51 52 53 54 55 56 9A 8B 7C 6C 8A 7A 7B 6B 25 26 27 28 29 30 31 32 9K 10J 11J 11H 10G 9G 11F 11G 57 58 59 60 61 62 63 64 65 6A 5B 5A 4A 5C 4B 3A 2A 1A 33 34 35 36 9F 10F 11E 10E 66 67 68 69 70 71 72 2B 3B 1C 1B 3D 3C 1D Note : 1. NC pins are read as "X" ( i.e. don′t care.) - 16 - ORDER 73 PIN ID 2C 74 75 76 77 78 79 80 81 82 3E 2D 2E 1E 2F 3F 1G 1F 3G 83 84 85 86 87 88 89 90 2G 1H 1J 2J 3K 3J 2K 1K 91 92 93 94 95 96 97 98 99 2L 3L 1M 1L 3N 3M 1N 2M 3P 100 101 102 103 104 105 106 107 2N 2P 1P 3R 4R 4P 5P 5N 108 109 5R Internal Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM JTAG DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Power Supply Voltage V DD 1.7 Input High Level VI H 1.3 1.8 1.9 V - V DD+0.3 V Input Low Level V IL -0.3 Output High Voltage(IOH=-2mA) VO H 1.4 - 0.5 V - V DD V Output Low Voltage(IOL=2mA) V OL V SS - 0.4 V Note Note: 1. The input level of SRAM pin is to follow the SRAM DC specification. JTAG AC TEST CONDITIONS Symbol Min Unit Input High/Low Level Parameter V IH/VIL 1.8/0.0 V Input Rise/Fall Time TR/TF 1.0/1.0 ns 0.9 V Input and Output Timing Reference Level Note 1 Note: 1. See SRAM AC test output load on page 11. JTAG AC Characteristics Parameter Symbol Min Max Unit TCK Cycle Time tCHCH 50 - ns TCK High Pulse Width tCHCL 20 - ns TCK Low Pulse Width tCLCH 20 - ns TMS Input Setup Time tMVCH 5 - ns TMS Input Hold Time tCHMX 5 - ns TDI Input Setup Time tDVCH 5 - ns TDI Input Hold Time tCHDX 5 - ns SRAM Input Setup Time tSVCH 5 - ns SRAM Input Hold Time tCHSX 5 - ns Clock Low to Output Valid tCLQV 0 10 ns Note JTAG TIMING DIAGRAM TCK tC H C H tC H C L t MVCH t CHMX t DVCH tC H D X t SVCH t CHSX tC L C H TMS TDI PI (SRAM) t CLQV TDO - 17 - Dec. 2003 Rev 2.0 K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM 165 FBGA PACKAGE DIMENSIONS 15mm x 17mm Body, 1.0mm Bump Pitch, 11x15 Ball Array B Top View A Side View C D A G E B F Bottom View ∅H E Symbol Value Units Symbol Value Units A 15 ± 0.1 mm Note E 1.0 mm B 17 ± 0.1 mm F 14.0 mm C 1.3 ± 0.1 mm G 10.0 mm D 0.35 ± 0.05 mm H 0.5 ± 0.05 mm - 18 - Note Dec. 2003 Rev 2.0