Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
Sep. 19.2001
Advance
0.1
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
Nov. 22. 2002
Preliminary
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
0.2
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
Preliminary
0.3
Few current value is changed.
Before
Apr. 2. 2003
Preliminary
Apr. 9. 2003
Preliminary
K9F2GXXQ0M
ISB2
Unit : us
K9F2GXXU0M
Typ.
Max.
Typ.
Max.
20
100
20
100
ILI
-
±20
-
±20
ILO
-
±20
-
±20
After
K9F2GXXQ0M
Typ.
0.4
K9F2GXXU0M
Max.
Typ.
Max.
ISB2
10
50
10
50
ILI
-
±10
-
±10
ILO
-
±10
-
±10
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.5
History
1. The value of AC parameters for K9F2G08U0M are changed.
ITEM
Draft Date
Remark
Apr. 22.2004
Preliminary
K9F2G08U0M
Before
After
tWC
45
30
tWP
25
15
tWH
15
10
tRC
50
30
tRP
25
15
tREH
15
10
tREA
30
18
tCEA
45
23
tADL
-
100
2. The definition and value of setup and hold time are changed.
ITEM
K9F2G16U0M
K9F2GXXQ0M
K9F2G08U0M
tCLS
25
10
tCLH
10
5
tCS
35
15
tCH
10
5
tALS
25
10
tALH
10
5
tDS
20
10
tDH
10
5
3. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 22~25)
- tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
4. Added addressing method for program operation
0.6
1. PKG(TSOP1, WSOP1) Dimension Change
May. 19. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
2
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F2G08Q0M-Y,P
Vcc Range
Organization
X8
1.70 ~ 1.95V
K9F2G16Q0M-Y,P
K9F2G08U0M-Y,P
PKG Type
X16
TSOP1
X8
2.7 ~ 3.6V
K9F2G16U0M-Y,P
X16
FEATURES
• Fast Write Cycle Time
- Page Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Cache Program Operation for High Performance Program
• Power-On Auto-Read Operation
• Intelligent Copy-Back Operation
• Unique ID for Copyright Protection
• Package :
- K9F2GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
• Voltage Supply
-1.8V device(K9F2GXXQ0M): 1.70V~1.95V
-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
• Organization
- Memory Cell Array
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
• Automatic Program and Erase
- Page Program
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
- Block Erase
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
• Page Read Operation
- Page Size
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
- Random Read : 25µs(Max.)
- Serial Access : 50ns(Min.)
30ns(Min., K9F2G08U0M only)
GENERAL DESCRIPTION
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16
device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Even the write-intensive systems can take advantage of the K9F2GXXX0M′s extended reliability of 100K program/erase cycles by
providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large
nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
3
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
PIN CONFIGURATION (TSOP1)
K9F2GXXX0M-YCB0,PCB0/YIB0,PIB0
X16
X8
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
X16
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
0.10
MAX
0.004
Unit :mm/Inch
#48
#24
#25
12.40
0.488 MAX
12.00
0.472
+0.003
( 0.25 )
0.010
#1
0.008-0.001
0.50
0.0197
0.16 -0.03
+0.075
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
0.25
0.010 TYP
1.00±0.05
0.039±0.002
0.125 0.035
+0.07
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
( 0.50 )
0.020
4
1.20
0.047MAX
0.05
0.002 MIN
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
(K9F2G08X0M)
I/O0 ~ I/O15
(K9F2G16X0M)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 operation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase operation. Regarding CE control during
read operation, refer to ’Page read’section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
PRE
POWER-ON READ ENABLE
The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when
PRE pin is tied to Vcc.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
5
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Figure 1-1. K9F2G08X0M (X8) Functional Block Diagram
VCC
VSS
A12 - A28
X-Buffers
Latches
& Decoders
2048M + 64M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2048 + 64)Byte x 131072
Data Register & S/A
Cache Register
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE PRE WP
Figure 2-1. K9F2G08X0M (X8) Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 2048 Blocks
= 2112 Mbits
128K Pages
(=2,048 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
Row Address
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
Row Address
5th Cycle
A28
*L
*L
*L
*L
*L
*L
*L
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
6
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Figure 1-2. K9F2G16X0M (X16) Functional Block Diagram
VCC
VSS
A11 - A27
X-Buffers
Latches
& Decoders
2048M + 64M Bit
NAND Flash
ARRAY
A0 - A10
Y-Buffers
Latches
& Decoders
(1024 + 32)Word x 131072
Data Register & S/A
Cache Register
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 15
CLE ALE PRE WP
Figure 2-2. K9F2G16X0M (X16) Array Organization
1 Block = 64 Pages
(64K + 2k) Word
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
= (64K + 2K) Words
1 Device = (1K+32)Word x 64Pages x 2048 Blocks
= 2112 Mbits
128K Pages
(=2,048 Blocks)
16 bit
1K Words
32 Words
I/O 0 ~ I/O 15
Page Register
1K Words
32 Words
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O8 ~ 15
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
*L
Column Address
2nd Cycle
A8
A9
A10
*L
*L
*L
*L
*L
*L
Column Address
3rd Cycle
A11
A12
A13
A14
A15
A16
A17
A18
*L
Row Address
4th Cycle
A19
A20
A21
A22
A23
A24
A25
A26
*L
Row Address
5th Cycle
A27
*L
*L
*L
*L
*L
*L
*L
*L
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
7
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Product Introduction
The K9F2GXXX0M is a 2112Mbit(2,214,592,512 bit) memory organized as 131,072 rows(pages) by 2112x8(X8 device) or
1056x16(X16 device) columns. Spare 64(X8) or 32(X16) columns are located from column address of 2048~2111(X8 device) or
1024~1055(X16 device). A 2112-byte(X8 device) or 1056-word(X16 device) data register and a 2112-byte(X8 device) or 1056word(X16 device) cache register are serially connected to each other. Those serially connected registers are connected to memory
cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in
a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells
reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block
basis. The memory array consists of 2048 separately erasable 128K-byte(X8 device) or 64K-word(X16 device) blocks. It indicates
that the bit by bit erase operation is prohibited on the K9F2GXXX0M.
The K9F2GXXX0M has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). This scheme dramatically reduces pin
counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and
data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch
Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other
commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 256M byte(X8 device) or 128M word(X16 device) physical space requires 29(X8) or 28(X16) addresses, thereby requiring
five cycles for addressing: 2 cycles of column address, 3 cycles of row address, in that order. Page Read and Page Program need
the same five address cycles following the required command input. In Block Erase operation, however, only the three row address
cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9F2GXXX0M.
The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers
are being programmed into memory cells in cache program mode. The program performance may be dramatically improved by cache
program when there are lots of pages of data to be programmed.
The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address
input after power-on.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
Function
1st. Cycle
2nd. Cycle
Read
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
80h
10h
Cache Program
80h
15h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
Random Data Input*
85h
-
05h
E0h
Random Data Output
Read Status
*
70h
Acceptable Command during Busy
O
O
NOTE : 1. Random Data Input/Output can be executed in a page.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
8
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9F2GXXX0M-XCB0
Temperature Under Bias
Rating
Symbol
K9F2GXXU0M(3.3V)
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
VCC
-0.2 to + 2.45
-0.6 to + 4.6
V
-10 to +125
TBIAS
K9F2GXXX0M-XIB0
°C
-40 to +125
K9F2GXXX0M-XCB0
Storage Temperature
Unit
K9F2GXXQ0M(1.8V)
TSTG
-65 to +150
°C
Ios
5
mA
K9F2GXXX0M-XIB0
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2GXXX0M-XCB0 :TA=0 to 70°C, K9F2GXXX0M-XIB0:TA=-40 to 85°C)
Parameter
K9F2GXXU0M(3.3V)
K9F2GXXQ0M(1.8V)
Symbol
Min
Typ.
Max
Min
Typ.
Max
Unit
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with
OperatSerial Access
ing
Current Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Symbol
ICC1
K9F2GXXQ0M(1.8V)
Test Conditions
Typ
Max
Min
Typ
Max
-
10
20
-
15
30
-
-
1
-
-
1
-
10
50
-
10
50
-
ICC3
-
ISB1
CE=VIH, WP=PRE=0V/VCC
CE=VCC-0.2,
WP=PRE=0V/VCC
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
Input High Voltage
VIH*
-
0.8xVcc
-
Vcc+0.3 0.8xVcc
-
Vcc+0.3
Input Low Voltage, All inputs
VIL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
VOH
Vcc-0.1
-
-
2.4
-
-
-
-
0.1
-
-
0.4
3
4
-
8
10
-
Output Low Voltage Level
Output Low Current(R/B)
VOL
IOL(R/B)
Unit
tRC=30ns, CE=VIL
IOUT=0mA
ICC2
ISB2
K9F2GXXU0M(3.3V)
Min
K9F2GXXQ0M :IOH=-100µA
K9F2GXXU0M :IOH=-400µA
K9F2GXXQ0M :IOL=100uA
K9F2GXXU0M :IOL=2.1mA
K9F2GXXQ0M :VOL=0.1V
K9F2GXXU0M :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
9
mA
µA
V
mA
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
VALID BLOCK
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
Unit
NVB
2,008
-
2,048
Blocks
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
AC TEST CONDITION
(K9F2GXXX0M-XCB0 :TA=0 to 70°C, K9F2GXXX0M-XIB0:TA=-40 to 85°C
K9F2GXXQ0M : Vcc=1.70V~1.95V , K9F2GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F2GXXQ0M
K9F2GXXU0M
0V to Vcc
0V to Vcc
5ns
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Vcc/2
Vcc/2
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
L
H
H
L
L
L
WE
RE
WP
PRE
L
H
X
X
L
H
X
X
L
L
H
H
X
H
L
H
H
X
L
H
H
X
Mode
Read Mode
Command Input
Address Input(5clock)
Write Mode
Command Input
Address Input(5clock)
Data Input
L
L
L
H
X
X
Data Output
X
X
X
X
H
X
X
During Read(Busy)
X
X
X
X
X
H
X
During Program(Busy)
X
X
X
X
X
H
X
During Erase(Busy)
X
X(1)
X
X
X
L
X
X
X
H
X
X
0V/VCC(2)
0V/VCC(2)
Write Protect
Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
300
700
µs
Dummy Busy Time for Cache Program
tCBSY
3
700
µs
-
-
4
cycles
-
-
4
cycles
-
2
3
ms
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Main Array
Spare Array
Nop
tBERS
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
10
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
K9F2G08U0M(3.3V)
Min
Max
Min
Unit
Max
CLE setup Time
tCLS
25
-
10
-
ns
CLE Hold Time
tCLH
10
-
5
-
ns
CE setup Time
tCS
35
-
15
-
ns
CE Hold Time
tCH
10
-
5
-
ns
WE Pulse Width
tWP
25
-
15
-
ns
ALE setup Time
tALS
25
-
10
-
ns
ALE Hold Time
tALH
10
-
5
-
ns
Data setup Time
tDS
20
-
10
-
ns
Data Hold Time
tDH
10
-
5
-
ns
Write Cycle Time
tWC
45
-
30
-
ns
WE High Hold Time
tWH
15
-
10
-
ns
ALE to Data Loading Time
tADL
100
-
100
-
ns
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
AC Characteristics for Operation
Parameter
Symbol
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
Min
Max
K9F2G08U0M(3.3V)
Min
Max
Unit
Data Transfer from Cell to Register
tR
-
25
-
25
µs
ALE to RE Delay
tAR
10
-
10
-
ns
CLE to RE Delay
tCLR
10
-
10
-
ns
Ready to RE Low
tRR
20
-
20
-
ns
RE Pulse Width
tRP
25
-
15
-
ns
WE High to Busy
tWB
-
100
-
100
ns
Read Cycle Time
tRC
50
-
30
-
ns
RE Access Time
tREA
-
30
-
18
ns
CE Access Time
tCEA
-
45
-
23
ns
RE High to Output Hi-Z
tRHZ
-
30
-
30
ns
CE High to Output Hi-Z
tCHZ
-
20
-
20
ns
RE or CE High to Output hold
tOH
15
-
15
-
ns
RE High Hold Time
tREH
15
-
10
-
ns
tIR
0
-
0
-
ns
WE High to RE Low
tWHR
60
-
60
-
ns
Device Resetting Time(Read/Program/Erase)
tRST
-
5/10/500(1)
-
5/10/500(1)
µs
Output Hi-Z to RE Low
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
11
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh for X8, FFFFh for X16) except locations where the invalid block(s) information is written prior to
shipping. The invalid block(s) status is defined by the 1st byte(X8 device) or 1st word(X16 device) in the spare area. Samsung
makes sure that either the 1st or 2nd page of every invalid block has non-FFh(X8) or non-FFFFh(X16) data at the column address of
2048(X8 device) or 1024(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover
the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original
invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of
the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Create (or update)
Invalid Block(s) Table
No
Check "FFh( or FFFFh)" at the column address
2048(X8 device) or 1024(X16 device)
of the 1st and 2nd page in the block
Check "FFh
or FFFFh" ?
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create invalid block table.
12
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification
operation is not needed.
Start
Write 00h
Write 80h
Write Address
Write Address
Write Data
Write 30h
Write 10h
Wait for tR Time
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
Verify Data
No
Fail
*
Program Error
Pass
Program Completed
*
Program Error
Yes
No
I/O 0 = 0 ?
*
Yes
13
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Write 30h
Read Status Register
Read Data
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
No
Reclaim the Error
Yes
*
No
Erase Error
Verify ECC
Yes
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
{
nth
Block A
1
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
2
(page)
* Step1
When an error happens in the nth page of the Block ’A’during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’by creating an ’invalid Block’table or other appropriate scheme.
14
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited.
Page 63
(64)
Page 63
:
Page 31
:
(32)
Page 31
:
Page 2
Page 1
Page 0
(1)
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
Data register
(3)
(32)
(2)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
(64)
Ex.) Random page program (Prohibition)
Data (64)
DATA IN: Data (1)
15
Data (64)
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE don’t-care
WE
≈
≈
CE
ALE
I/Ox
80h
Address(5Cycles)
Data Input
tCH
tCS
Data Input
10h
tCEA
CE
CE
tREA
tWP
RE
WE
I/O0~7
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/Ox
00h
Address(5Cycle)
Data Output(serial access)
30h
16
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NOTE
Device
I/O
DATA
ADDRESS
I/Ox
Data In/Out
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
K9F2G08X0M(X8)
I/O 0 ~ I/O 7
~2112byte
A0~A7
A8~A11
A12~A19
A20~A27
A28
K9F2G16X0M(X16)
I/O 0 ~ I/O 15
~1056word
A0~A7
A8~A10
A11~A18
A19~A26
A27
Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALS
tALH
ALE
tDH
tDS
I/Ox
Command
K9F2G16X0M : I/O8~15 must be set to "0"
Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
tWC
CE
tWP
tWP
tWP
tWP
WE
tWH
tALH
tALS
tWH
tALS
tALH
tALS
tWH
tALH
tALS
tWH
tALH
tALS
tALH
ALE
tDS
I/Ox
K9F2G16X0M : I/O8~15
tDH
Col. Add1
tDS
tDH
Col. Add2
must be set to "0"
17
tDS
tDH
Row Add1
tDS
tDH
Row Add2
tDS
tDH
Row Add3
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Input Data Latch Cycle
tCLH
≈
CLE
tCH
≈
CE
tWC
≈
ALE
tWP
tWP
≈
tALS
tWP
WE
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
I/Ox
DIN final*
DIN 1
≈
DIN 0
NOTES : DIN final means 2112(X8) or 1056(X16)
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
≈
CE
tREH
tREA
tREA
tRP
RE
tCHZ*
tOH
≈
tREA
tRHZ*
tRHZ*
I/Ox
Dout
tRC
≈
tRR
Dout
≈
tOH
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
18
Dout
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
≈
CE
tREH
tREA
tREA
≈
tREA
tRP
RE
tCHZ*
tOH
tRHZ*
tRHZ*
I/Ox
Dout
tRR
Dout
≈
tOH
Dout
≈
tRC
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
≈
CE
tREH
tREA
tREA
≈
tREA
tRP
RE
tCHZ*
tOH
tRHZ*
tRHZ*
I/Ox
Dout
tRC
≈
tRR
Dout
≈
tOH
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
19
Dout
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA
tCHZ*
tOH
tWHR
RE
tDS
I/Ox
tDH
tIR*
tREA
tRHZ*
tOH
Status Output
70h
K9F2G16X0M : I/O8~15 must be set to "0"
20
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Read Operation
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tR
tRHZ
tRC
≈
RE
I/Ox
00h
Col. Add1
Col. Add2
Row Add1
Column Address
Row Add2 Row Add3
30h
Dout N
Dout N+1
≈ ≈
tRR
Row Address
Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE
tWB
tCHZ
tOH
tAR
ALE
tRC
tR
RE
tRR
I/Ox
00h
Col. Add1
Col. Add2
Column Address
Row Add1
Row Add2 Row Add3
Dout N
30h
Row Address
Busy
R/B
21
Dout N+1
Dout N+2
Dout M
22
R/B
I/Ox
RE
ALE
WE
CE
CLE
00h
Col. Add2
Column Address
Col. Add1
Random Data Output In a Page
Row Add2 Row Add3
Row Address
Row Add1
30h
Busy
tRR
tR
tWB
tAR
Dout N
tRC
Dout N+1
05h
Col Add1
Col Add2
Column Address
E0h
tWHR
tCLR
Dout M
tREA
Dout M+1
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tADL
tPROG
ALE
I/Ox
80h
Co.l Add1 Col. Add2
SerialData
Column Address
Input Command
Row Add1
≈ ≈
RE
Din
Din
N
M
1 up to m Byte
Serial Input
Row Add2 Row Add3
Row Address
10h
70h
Program
Command
≈
R/B
X8 device : m = 2112byte
X16 device : m = 1056word
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
23
24
R/B
I/Ox
RE
ALE
WE
Col. Add1
Col. Add2
tWC
Row Add2 Row Add3
Row Address
Row Add1
tADL
Din
M
Serial Input
Din
N
Col. Add1
Col. Add2
tADL
Random Data Column Address
Input Command
85h
tWC
Din
K
Serial Input
Din
J
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Serial Data
Column Address
Input Command
80h
tWC
≈
≈ ≈
CE
≈
≈ ≈
CLE
10h
Program
Command
tWB
tPROG
≈
Page Program Operation with Random Data Input
70h
Read Status
Command
I/O0
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
25
R/B
I/Ox
RE
ALE
WE
CE
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
35h
tR
tWB
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Copy-Back Data
Input Command
Busy
85h
Data 1
tADL
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
00h
tWC
≈
CLE
Data N
10h
tWB
I/O0
I/O0=0 Successful Program
I/O0=1 Error in Program
Busy
70h
Read Status
Command
tPROG
≈
Copy-Back Program Operation With Random Data Input
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
≈ ≈
26
R/B
I/Ox
RE
ALE
WE
tADL
≈ ≈
Din
M
Serial Input
Din
N
≈
15h
Program
Command
(Dummy)
tWB
tCBSY
tCBSY : max. 700us
80h
I/Ox
R/B
tCBSY
Address &
15h
Data Input
Col Add1,2 & Row Add1,2
Data
80h
Ex.) Cache Program
80h
Address &
Data Input
Last Page Input & Program
15h
tCBSY
80h
Address &
Data Input
tCBSY
Din
N
15h
tADL
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Max. 63 times repeatable
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Serial Data Column Address
Input Command
80h
tWC
≈
CE
≈
≈ ≈
CLE
80h
tCPROG
Address &
Data Input
Din
10h
M
Program Confirm
Command
(True)
tWB
≈
Cache Program Operation(available only within a block)
I/O
10h
tPROG
70h
70h
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
BLOCK ERASE OPERATION
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/Ox
60h
Row Add1
Row Add2 Row Add3
D0h
70h
I/O 0
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
≈
Row Address
Read Status
Command
27
I/O0=0 Successful Erase
I/O0=1 Error in Erase
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox
90h
Read ID Command
00h
Address. 1cycle
XXh
4th cyc.*
Maker Code Device Code
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F2G08Q0M
AAh
15h
K9F2G08U0M
DAh
15h
K9F2G16Q0M
BAh
55h
K9F2G16U0M
CAh
55h
ID Definition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
Device
Code*
ECh
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
28
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
4th ID Data
Description
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
Block Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
Redundant Area Size
( byte/512byte)
8
16
Organization
x8
x16
Serial AccessMinimum
50ns / 30ns
25ns
Reserved
Reserved
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
29
0
0
1
1
0
1
0
1
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h-30h to the command
register along with five address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which five
address cycles and 30h command initiates that operation. Once the command is latched, it does not need to be written for the following page read operation. Two types of operations are available : random read, serial page read .
The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of
data within the selected page are transferred to the data registers in less than 25µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be
read out in 50ns(30ns in K9F2G08U0M only) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE
clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
00h
Address(5Cycle)
Data Output(Serial Access)
30h
Col Add1,2 & Row Add1,2,3
Data Field
Spare Field
30
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Figure 7. Random Data Output In a Page
tR
R/B
RE
I/Ox
Address
5Cycles
00h
Data Output
30h
05h
Address
2Cycles
E0h
Data Output
Col Add1,2 & Row Add1,2,3
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2112(X8 device) or words up to 1056(X16 device), in a single page program cycle. The number of consecutive partial
page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array(X8
device:1time/512byte, X16 device:1time/256word) and 4 times for spare array(X8 device:1time/16byte, X16 device:1time/8word).
The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which
up to 2112bytes(X8 device) or 1056words(X16 device) of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
10h
70h
Pass
I/O0
Col Add1,2 & Row Add1,2,3
"1"
Data
Fail
31
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
85h
Address & Data Input
10h
70h
Col Add1,2
Data
Col Add1,2 & Row Add1,2,3
Data
Pass
I/O0
"1"
Fail
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte(X8 device) or 1056word(X16 device) data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data
stored in data register are programmed into memory cell.
After writing the first set of data up to 2112byte(X8 device) or 1056word(X16 device) into the selected cache registers, Cache Program command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program
operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY)
and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data
registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is
inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of
the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of
data from cache registers. The status bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of programming only with R/B, the last page of the target programming sequence must be
progammed with actual Page Program command (10h).
Figure 10. Cache Program(available only within a block)
tCBSY
R/B
80h
Address &
Data Input*
15h
Col Add1,2 & Row Add1,2,3
Data
tCBSY
80h
Address &
Data Input
15h
Col Add1,2 & Row Add1,2,3
Data
tPROG
tCBSY
80h
Address &
Data Input
15h
Col Add1,2 & Row Add1,2,3
Data
32
Address &
10h
Data Input
Col Add1,2 & Row Add1,2,3
Data
80h
70h
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure 11. "When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back operations
could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
Figure 11. Page Copy-Back program Operation
tR
tPROG
R/B
I/Ox
00h
Add.(5Cycles)
35h
85h
Col. Add1,2 & Row Add1,2,3
Source Address
Add.(5Cycles)
10h
Pass
I/O0
70h
Col. Add1,2 & Row Add1,2,3
Destination Address
Fail
Figure 12. Page Copy-Back program Operation with Random Data Input
tPROG
tR
R/B
I/Ox
00h
Add.(5Cycles)
35h
Col. Add1,2 & Row Add1,2,3
Source Address
85h
Add.(5Cycles)
Data
Col. Add1,2 & Row Add1,2,3
Destination Address
33
85h
Add.(2Cycles)
Data
10h
Col Add1,2
There is no limitation for the number of repetition.
70h
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A18 to A28(X8) or A 17 to A27(X16) is valid while A 12 to A17(X8) or A 11 to A16(X16) is ignored. The Erase
Confirm command(D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup
followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
60h
I/Ox
Address Input(3Cycle)
Pass
I/O0
70h
D0h
"1"
Block Add. : A12 ~ A28 (X8)
or A11 ~ A27 (X16)
Fail
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table2. Read Staus Register Definition
I/O No.
Page Program
Block Erase
Cache Prorgam
Read
I/O 0
Pass/Fail
I/O 1
Not use
Definition
Pass/Fail
Pass/Fail(N)
Not use
Pass : "0"
Fail : "1"
Not use
Pass/Fail(N-1)
Not use
Pass : "0"
Fail : "1"
I/O 2
Not use
Not use
Not use
Not use
Don’t -cared
I/O 3
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 5
Ready/Busy
Ready/Busy
True Ready/Busy
Ready/Busy
Busy : "0"
Ready : "1"
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
Ready : "1"
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Protected : "0"
Not use
Not use
Not use
Not use
Not Protected
I/O 8~15
(X16 device
only)
Don’t -care
NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.
2. I/Os defined ’Not use’are recommended to be masked out when Read Status is being executed.
34
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, 50h respectively.
The command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Figure 14. Read ID Operation
tCLR
CLE
tCEA
CE
WE
tAR
ALE
RE
tWHR
I/OX
90h
00h
tREA
Maker code
Address. 1cycle
Device
Device
Code*
ECh
XXh
4th Cyc.*
Device code
Device Code*(2nd Cycle)
4th Cycle*
K9F2G08Q0M
AAh
15h
K9F2G08U0M
DAh
15h
K9F2G16Q0M
BAh
55h
K9F2G16U0M
CAh
55h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after
the Reset command is written. Refer to Figure 15 below.
Figure 15. RESET Operation
tRST
R/B
I/OX
FFh
Table3. Device Status
After Power-up
After Reset
PRE status
High
Low
Operation Mode
First page data access is ready
00h command is latched
35
Waiting for next command
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of autopage read function. Auto-page read function is enabled only when PRE pin is tied to Vcc. Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F2GXXU0M).
≈
Figure 16. Power-On Auto-Read (3.3V device only)
~ 1.8V
VCC
≈
CLE
≈≈
CE
WE
≈≈
ALE
tR
≈
R/B
≈
PRE
≈
RE
I/OX
1st
36
2nd
3rd
....
n th
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
1.8V device - VOL : 0.1V, VOH : VccQ-0.1V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
Figure 17. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
200n
2m
30
0.85
120
90
60
0.57
1.7
1K
tf
1.7
1.7
2K
3K
Rp(ohm)
tr,tf [s]
1.7
tr
100n
3m
Ibusy [A]
tr,tf [s]
300n
Ibusy
150n
150
3m
1.2
100
0.8
2m
1.8 tf
1.8
1.8
1.8
1K
2K
3K
Rp(ohm)
4K
100n
tr
1m
50
50n
0.43
1.7
4K
0.6
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
1.85V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
3mA + ΣIL
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
37
1m
Ibusy [A]
200
2.4
Ibusy
Preliminary
FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
≈
Figure 18. AC Waveforms for Power Transition
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
High
≈
VCC
WE
10µs
≈
≈
WP
38
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V