MBR3035PT thru MBR3060PT www.vishay.com Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 3 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 2 1 TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-247AD (TO-3P) IF(AV) 30 A VRRM 35 V, 60 V IFSM 200 A VF 0.60 V, 0.65 V TJ max. 150 °C Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (Fig.1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse surge current at tp = 2 µs, 1 kHz per diode IRRM (1) Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ - 65 to + 150 °C TSTG - 65 to + 175 °C Operating junction temperature range Storage temperature range 2.0 1.0 A Note (1) 2.0 μs pulse width, f = 1.0 kHz Revision: 20-Nov-12 Document Number: 88676 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR3035PT thru MBR3060PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode Maximum instantaneous reverse current at rated DC blocking voltage per diode VF (1) MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT TEST CONDITIONS IF = 20 A TC = 25 °C IF = 20 A IF = 30 A IF = 30 A IR (1) - 0.75 TC = 125 °C 0.60 0.65 TC = 25 °C 0.76 - TC = 125 °C 0.72 - TJ = 25 °C 1.0 5.0 TJ = 125 °C 60 100 V mA Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT RJC Typical thermal resistance, junction to case per diode 1.4 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 300 30 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 20-Nov-12 Document Number: 88676 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR3035PT thru MBR3060PT www.vishay.com Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 25 °C 0.1 1000 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT 0.01 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 10 TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 0.001 0 20 40 60 80 10 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) Revision: 20-Nov-12 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Document Number: 88676 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000