V80100PW-M3/4W

V80100PW
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 10 A
FEATURES
®
• Trench MOS Schottky technology
TMBS
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-3PW
PIN 1
PIN 2
PIN 3
CASE
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 40 A
VRRM
100 V
IFSM
450 A
EAS at L = 180 mH
700 mJ
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 40 A
0.64 V
TJ max.
150 °C
Package
TO-3PW
Diode variations
Dual common cathode
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum


MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOL
V80100PW
UNIT
VRRM
100
V
80
per device
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
A
40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
450
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 180 mH per diode
EAS
700
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 20-Dec-13
Document Number: 89183
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V80100PW
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
SYMBOL
TYP.
MAX.
UNIT
VBR
100 (minimum)
-
V
0.49
-
TA = 25 °C
IF = 10 A
IF = 20 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 40 A
VF (1)
IF = 10 A
TJ = 125 °C
IF = 20 A
IF = 40 A
VR = 80 V
Reverse current per diode
VR = 100 V
0.59
-
0.76
0.84
0.43
-
0.55
-
0.64
0.76
V
TA = 25 °C
38
-
μA
TA = 125 °C
17
-
mA
85
1000
μA
33
76
mA
IR (2)
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V80100PW
UNIT
1.5
per diode
Typical thermal resistance
per device
°C/W
RJC
0.8
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-3PW
V80100PW-M3/4W
4.5
4W
30/tube
Tube


RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
36
80
D = 0.8
D = 0.5
D = 0.3
32
60
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
50
40
20
28
24
D = 1.0
20
D = 0.2
16
T
D = 0.1
12
8
D = tp/T
4
Mounted on Specific Heatsink
tp
0
0
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
28
32
36
40
44
48
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Dec-13
Document Number: 89183
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V80100PW
www.vishay.com
Vishay General Semiconductor
10 000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TA = 125 °C
TA = 25 °C
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
100
Instantaneous Forward Voltage (V)
0.1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
10
100
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
1
Fig. 5 - Typical Junction Capacitance Per Diode
TA = 150 °C
10
TA = 125 °C
1
0.1
TA = 25 °C
0.01
20
30
40
50
60
70
80
90
100
Junction to Case
1
0.1
0.01
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
1
10
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.170 (4.32)
0.840 (21.34)
0.820 (20.83)
0.160 (4.06)
0.140 (3.56)
0.225 (5.72)
0.205 (5.21)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
3° Ref.
R0.155 (R3.94)
R0.145 (R3.68)
0.077 (1.96)
0.063 (1.60)
10° Typ.
Both Sides
0.079 (2.01)
0.065 (1.65)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.565 (14.35)
0.545 (13.84)
0.175 (4.45)
0.165 (4.19)
3° Ref.
3° Ref.
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both Sides
0.098 (2.50)
0.083 (2.12)
0.030 (0.75)
0.020 (0.50)
Revision: 20-Dec-13
Document Number: 89183
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000