VSKJS203/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRODUCT SUMMARY • High surge capability IF(AV) 200 A • Easy mounting on heatsink ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. The VSKJS203.. Schottky rectifier common anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C TJ Range VALUES UNITS 200 A 100 V 12 800 A 0.87 V - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage Document Number: 93226 Revision: 04-May-10 VRWM VSKJS203/100 UNITS 100 V For technical questions, contact: [email protected] www.vishay.com 1 VSKJS203/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per module per leg IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TC = 121 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied UNITS 200 100 12 800 A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A TEST CONDITIONS VALUES UNITS 10 ms sine or 6 ms rect. pulse 1700 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 100 A Maximum forward voltage drop VFM 200 A 100 A 200 A TJ = 25 °C 0.99 TJ = 25 °C 1.34 0.87 TJ = 125 °C 1.09 3 VR = Rated VR Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Maximum RMS insulation voltage VINS TJ = 125 °C V 65 Rated VR 50 Hz mA 2750 pF 7.0 nH 10 000 V/μs 3000 (1 min) 3600 (1 s) V VALUES UNITS - 55 to 175 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Typical thermal resistance, case to heatsink per module RthCS DC operation 0.52 °C/W 0.1 Approximate weight to heatsink Mounting torque ± 10 % busbar Case style www.vishay.com 2 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC For technical questions, contact: [email protected] 75 g 2.7 oz. 4 Nm 3 TO-240AA compatible Document Number: 93226 Revision: 04-May-10 VSKJS203/100 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) ADD-A-PAK Generation VII Vishay High Power Products Power Modules Schottky Rectifier, 200 A TJ = 175 °C TJ = 25 °C 100 TJ = 125 °C 10 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 VFM - Forward Voltage Drop (V) 93226_01 10 20 Fig. 1 - Maximum Forward Voltage Drop Characteristics 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) 93226_02 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 60 70 80 90 100 110 ZthJC - Thermal Impedance (°C/W) 93226_03 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC 0.1 0.01 0.00001 93226_04 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93226 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 3 VSKJS203/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A 120 180 160 140 120 DC 100 80 60 40 Square wave (D = 0.50) Rated VR applied 20 See note (1) RMS limit 100 Average Power Loss (W) Allowable Case Temperature (°C) Vishay High Power Products 80 30° 60° 90° 120° 180° DC 60 40 20 0 0 0 93226_05 50 100 150 200 250 0 300 IF(AV) - Average Forward Current (A) 93226_06 IFSM - Non-Repetitive Surge Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 20 40 60 80 100 120 140 160 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 100 000 10 000 1000 100 10 93226_07 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93226 Revision: 04-May-10 VSKJS203/100 ADD-A-PAK Generation VII Vishay High Power Products Power Modules Schottky Rectifier, 200 A ORDERING INFORMATION TABLE Device code VS KJ S 20 3 1 2 3 4 5 / 100 6 1 - Vishay HPP 2 - Circuit configuration: 3 - S = Schottky diode 4 - Average current rating (20 = 200 A) 5 - Product silicon identification 6 - Voltage rating (100 = 100 V) KJ = ADD-A-PAK - 2 diodes/common anode CIRCUIT CONFIGURATION (1) - (2) + (3) + LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93226 Revision: 04-May-10 www.vishay.com/doc?95369 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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