SAMSUNG S1T8501X01-D0B0

SPEECH NETWORK WITH DIALER INTERFACE
S1T8501
INTRODUCTION
16−DIP−300A
The S1T8501 is a speech network integrated circuit which includes
the following components: transmit amp, receive amp, DTMF amp,
voltage regulator, line equalizer, and voltage comparator. It handles
the voice signal, performing the 2/4 wires interface and changing the
gain on both sending and receiving amplifiers to compensate the line
current. The S1T8501 can work in fixed gain mode.
FEATURES
•
Adjusts sending and receiving attenuation length
•
Regulated voltage output for external dialer
•
Linear interface for DTMF
•
Suitable for ceramic transducers
•
Mute function
ORDERING INFORMATION
Device
Package
Operating Temperature
S1T8501X01-D0B0
16−DIP−300A
−45°C — + 70°C
1
S1T85011
SPEECH NETWORK WITH DIALER INTERFACE
PIN CONFIGURATION
MIC1
1
16
MIC2
V+
2
15
VDD
MUTING
3
14
MF
BIAS ADJ.
4
13
RXO2
S1T8501
REGULATOR
BYPASS
5
12
RXO1
REGULATOR
6
11
RXI +
LINE CURRENT
SENSING
7
10
RXI −
ZBAL SWITCH
8
9
V−
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Line Voltage (3msec max)
VL
22
V
Forward Line Current
ILF
150
mA
Reverse Line Current
ILR
−150
mA
Power Dissipation (Ta = 70°C)
PD
1
W
Operating Temperature
TOPR
− 45 — + 70
°C
Storage Temperature
TSTG
− 65 — + 150
°C
2
SPEECH NETWORK WITH DIALER INTERFACE
S1T8501
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Line Voltage
Symbol
VL
Test Conditions
Ta = 25°C
Min.
Typ.
Max.
IL = 12mA
3.9
−
4.7
IL = 20mA
−
−
5.5
IL = 80mA
−
−
12.2
Unit
V
Common Mode Rejection Ratio
CMRR
f = 1kHz, IL = 12 to 80mA
50
−
−
dB
Line Matching Impedance
ZL
VRI = 0.3V, IL = 12 to 80mA f = 1kHz
500
600
700
Ω
IL = 25mA
48
49
50
GV (TX)
Ta = 25°C
f = 1kHz
VMI = 2mV
IL = 52mA
44
45
46
IL = 25 to 52mA
48
49
50
TX Gain
dB
TX Gain Flatness
∆ GV (TX)
VMI = 2mV, fref = 1kHz, IL = 12 to 80mA
−
−
±1
−
−
2
THD TX
f = 1kHz
IL = 16 to
80mA
VSO = 1V
TX Distortion
VSO = 1.3V
−
−
10
TX Noise
VNO (TX)
VMI = 0V, IL = 40mA
−
−
−70
dBm
Side Tone
GV (ST)
Ta = 25°C, f= 1kHz, IL = 25 to 52mA
−
−
36
dB
MIC Input Impedance
ZI (MIC)
VMI = 2mV, IL = 12 to 80mA
40
−
−
kΩ
Tx Loss in MF Operation
GV (LOSS)
VMI =2mV
IL = 25mA
−30
−
−
IL = 52mA
−30
−
−
IL = 25mA
7
8
9
GV (RX)
Ta = 25°C
VRI = 0.3V
f = 1kHz
IL = 52mA
2.5
3.5
4.5
IL = 25 to 52mA
7
8
9
VRI = 0.3V, fref = 1kHz, IL = 12 to 80mA
−
−
±1
VRO = 1.6V
−
−
2
VRO = 1.9V
−
−
10
VRO = 1.8V
−
−
2
VRO = 2.1V
−
−
10
RX Gain
∆GV (RX)
RX Gain Flatness
IL = 12mA
RX Distortion
THDRX
f =1kHz
IL = 50mA
dB
%
dB
dB
dB
%
RX Noise
VNO (RX)
VRI = 0V, IL = 12 to 80mA
−
−
100
µV
RX Output Impedance
RO (RX)
VRO = 50mV, IL = 40mA
−
−
100
Ω
MF Supply Voltage
VDD (MF)
IL = 12 to 80mA
2.4
2.5
−
V
0.5
−
−
2
−
−
Standby
MF Supply Current
Operation
ISB (MF)
IDD (MF)
IL = 12 to 80mA
mA
MF Amplifier Gain
GV (MF)
IL = 12 to 80mA fMF = 1kHz,VMF = 80mV
15
−
17
dB
DC Input Voltage Level (pin 14)
VI (MF)
VMF = 80mV
−
0.3VDD
−
V
Input Impedance (pin 14)
ZI (MF)
VMF = 80mV
40
−
−
kΩ
Distortion
THD MF
VMF = 110mV, IL = 12 to 80mA
−
−
2
%
3
S1T85011
SPEECH NETWORK WITH DIALER INTERFACE
ELECTRICAL CHARACTERISTICS (TA = 25°C) (Continued)
Characteristic
Symbol
Starting Delay Time
tD (ST)
Muting Threshold Voltage (pin 3)
VTH(MUTE)
IL = 12 to 80mA
Min.
Typ.
Max.
Unit
−
−
5
mS
−
−
1
1.6
−
−
Standby
ISB (MUTE)
IL = 12 to 80mA
−
−
− 10
Operation
IDD (MUTE)
IL = 12 to 80mA
−
−
+ 10
Muting Current
4
Test Conditions
V
µA
SPEECH NETWORK WITH DIALER INTERFACE
S1T8501
APPLICATION CIRCUIT
68
6
11
2
Io
Rx Amp
10
1.8K
1.8K
Output
Amp
1K
15V
13
SPEAKER
Tx Amp
AGC
Mic Amp
8
Tip
1
3.6K
4
16
Reg.
MF Amp
MIC
_
7.5K
12
+
330
1uF
Ring
5K
13K
9
5
7
15
3
14
MUTE MF Signal
10uF
30
to Dialer
5
S1T85011
SPEECH NETWORK WITH DIALER INTERFACE
NOTES
6