THREE PHASE DIODE＋THYRISTOR DFA100BA80/160 SanRex Power Module, DFA100BA, is complex isolated module which is designed for rash current circuit. ８０ It contains six diodes connected in a three phase bridge ３２ ２０ １７ １８ １１ 7 6 Module is also isolated type between electorode ５０.５MAX １７ 0 Module is designed very compactly. Because diode module and thyristor put together. ● This 1 ● This ３０ 2 configuration, and a thyristor connected to a direct current line. 0 5 6 7 terminal and mounting base. So you can put this ４.０ ２９ 4 ２０ 3 ２０ ９３.５MAX 1 Module and other one together in a same fin. 5 ２２MAX （Application） ● Inverter for AC or DC motor control, Current stabilized 4 3 power supply, Switching power supply. Unit：㎜ 2 ●DIODE ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Item Ratings DFA100BA80 DFA100BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions ID Output Current (D.C.) Three phase full wave, Tc＝98℃ IFSM Surge forward current １cycle, 50/60HZ, peak value, non-repetitive Ratings Unit 100 A 1186/1300 A Operating Junction Temperaturea −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Breakdown Voltage (R.M.S.) Tj Mounting Torque 2500 V Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･m （kgf･B） 150 g Ratings Unit 12 mA Mass A.C. 1minute Typical Value ■Electrical Characteristics Symbol Item Conditions IRRM Repetitive Peak Reverse Current,max. Tj＝150℃，VR=VRRM VFM Forward Voltage Drop,max. Tj＝25℃，IF＝100A，Inst. measurement 1.30 V Rth（j-c） Thermal Impedance, max. Junction to Case（TOTAL） 0.20 ℃/W Rth（c-f） Thermal Impedance, max. Case to Fin 0.10 ℃/W SanRex ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DFA100BA80/160 ●THYRISTOR ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Ratings Item DFA100BA80 DFA100BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak off-State Voltage 800 1600 V Symbol Item Conditions Ratings Unit 100 A 1186/1300 7030 A2S IT（AV） Average On-State Current Singl phase half wave. 180°conduction, Tc＝92℃ ITSM Surge On-State Current １cycle, 50/60HZ, peak value, non-repetitive I2t I2t A Critical Rate of Rise of On-State Current IG＝100mA， VD＝1／2VDRM， di G /dt＝0.1A/μs 150 A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature −40 to ＋135 ℃ Storage Temperature −40 to ＋125 ℃ N･m （㎏f･B） di／dt Tstg Mounting Torque Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminals（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Mass Typical Value 150 g ■Electrical Characteristics Symbol Ratings Unit IDRM Repetitive Peak Off-State Current,max. Tj＝135℃，VD＝VDRM 70 mA IRRM Repetitive Peak Reverse Current,max. Tj＝135℃，VD＝VRRM 70 mA VTM Peak On-State Voltage,max. Tj＝25℃，ITM＝100A，Inst. measurement 1.20 V IGT Gate Trigger Current,max. VD＝6V，IT＝1A 70 mA VGT Gate Trigger Voltage,max. VD＝6V，IT＝1A 3 V dv／dt Critical Rate of Rise of OffState Voltage,min. Tj＝125℃，VD＝2／3VDRM 500 V/μs Rth（j-c） Thermal Impedance, max. Junction to Case 0.36 ℃/W Rth（c-f） Thermal Impedance, max. Case to Fin 0.10 ℃/W DIODE Maximum Forward Characteristics ５００ Forward Current I（A） F Conditions Max. DIODE Output Current vs. Power Dissipation ２５０ ２００ ２００ １５０ １００ ５０ Three Phase １００ Ｔ ｊ=２５℃ ２０ １０ ０． ５ ３００ Power Dissipation Pav（W） １０００ Item １． ０ １． ５ ２． ０ Forward Voltage Drop V（V） F ２． ５ ５０ ０ ０ ２０ ４０ ６０ ８０ １００ １２０ Output Current ID（A） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DFA100BA80/160 Three Phase １４０ １４００ Surge Forward Current IFSM（A） １５０ Surge Forward Current Rating （Non-Repetitive） １２００ Per one element １０００ １３０ １２０ １１０ １００ ９０ ８０ ０ ２０ ４０ ６０ ８０ １００ ８００ ６０Hz ６００ ５０Hz ４００ Ｓ ｉ ｎｇ ｌ ｅｐｈａｓｅｈａ ｌ ｆｗａｖｅ Start Ｔ ｊ=２５℃ start ２００ ０ １ １２０ ２ ５ Transient Thermal Impedance θj-c（℃/W） DIODE Transient Thermal Impedance Junction to Case １００ Gate Characteristics ５ １０ ２ ５ １０−１ ２ ー４ ５ １０ ２ ５ １００ ２ ー３ Time t（sec） ー２ ５ １０ ２ ５ １０１ ２０ ５ １０ Pe Peak Forward Gate Voltage（10V） １０ Av ５ e ra ge Ga te Po ２ １ ak Ga te Po we （ r１ ０W ） we （ r３ W） −１０℃ ０． ５ １３５℃ ０． ２ ０． １ １０ Maximum ー５ ２５℃ ２０ Maximum Gate Non-Trigger Voltage ５０ １００ ２００ ５００ １０００ ２０００ ５０００ １００００ Gate Current（mA） SCR Output Current vs. Power Dissipation SCR Maximum Forward Characteristics １４０ Max. １２０ ５００ １００ ２００ １００ ５０ Ｔ ｊ=２５℃ ２０ １０ ０． ５ １． ０ １． ５ ２． ０ ８０ ６０ ４０ ２０ ０ ０ ２． ５ １６０ １４０ １２０ １００ ８０ ６０ ４０ ２０ ２０ ４０ ６０ ８０ Output Current（A） １００ １２０ Transient Thermal Impedance θj-c（℃/W） SCR Output Current vs. Maximum Allowable case Temperature ０ ０ ２０ ４０ ６０ ８０ １００ １２０ Output Current（A） On-State Voltage Drop VTM（V） Maximam Allowable Case Temperature（℃） ５０ ５０ Power Dissipation Pav（W） On-State Peak Current I（A） T １０００ １００ Gate Voltage（V） １００ ５ ２ １０−１ ５ ２ １０−２ ５ ２ １０−３ ５ ２ １０−４ ５ ２ １０−５ ー６ １０ ２ １０−２ ２ ２０ １０ Time（Cycles） Output Current ID（A） Peak Gate Current（３A） Allowable Case Temperature Tc（℃） DIODE Output Current vs. Allowable case Temperature SCR Transient Thermal Impedance １００ ５ ２ １０−１ ５ ２ １０−２ ５ ２ １０−３ ５ ２ １０−４ ５ ２ １０−５ ー６ １０ ２ １０−２ ２ Junction to Case Maximum ５ １０ー５ ２ ５ １０−１ ２ ５ １０ー４ ２ ５ １００ ２ Time t（sec） ５ １０ー３ ２ ５ １０１ ５ １０ー２ SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]