GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Speed 8 kHz to 60 kHz ECONO2 4PACK • Compliant to RoHS directive 2002/95/EC BENEFITS • Benchmark efficiency for SMPS appreciation in particular HF welding PRODUCT SUMMARY VCES • Rugged transient performance 1200 V IC at TC = 67 °C 75 A VCE(on) (typical) 3.4 V • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 100 TC = 80 °C 67 Pulsed collector current See fig. C.T.5 ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current IF TC = 25 °C 60 TC = 80 °C 40 Diode maximum forward current IFM 150 Gate to emitter voltage VGE ± 20 Maximum power dissipation (IGBT) PD Maximum operating junction temperature TC = 25 °C 480 TC = 80 °C 270 TJ 150 Storage temperature range TStg - 40 to + 125 Isolation voltage VISOL AC 2500 (MIN) Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: [email protected] A V W °C V www.vishay.com 1 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Threshold voltage temperature coefficient Zero gate voltage collector current Diode forward voltage drop Gate to emitter leakage current ΔVGE(th)/ΔTJ ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 500 μA 1200 - - IC = 75 A, VGE = 15 V - 3.4 4.0 IC = 100 A, VGE = 15 V - 3.8 4.5 IC = 75 A, VGE = 15 V, TJ = 125 °C - 4.0 4.5 IC = 100 A, VGE = 15 V, TJ = 125 °C - 4.53 5.1 VCE = VGE, IC = 250 μA 4.0 5.0 6.0 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 11 - UNITS V mV/°C VGE = 0 V, VCE = 1200 V - 7 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 580 2000 IF = 75 A - 3.7 4.9 IF = 100 A - 4.1 5.5 IF = 75 A, TJ = 125 °C - 3.7 5.1 IF = 100 A, TJ = 125 °C - 4.2 5.7 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS μA V SWITCHING CHARACTERISTICS (T = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) QG IC = 75 A - 630 - Gate to emitter charge (turn-on) QGE VCC = 600 V - 65 - Gate to collector charge (turn-on) QGC VGE = 15 V - 250 - Turn-on switching loss Eon 1.74 - Turn-off switching loss Eoff - 1.46 - Total switching loss Etot IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 25 °C (1) - - 3.20 - Turn-on switching loss Eon IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 125 °C (1) - 2.44 - - 2.35 - - 4.79 - - 268 - - 43 - - 308 - - 127 - Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 200 A Rg = 10 Ω, VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, VP = 1200 V Rg = 10 Ω, VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - - TJ = 25 °C - 13 18 TJ = 125 °C - 19 23 - 132 189 - 200 270 TJ = 25 °C - 858 1700 TJ = 125 °C - 1900 3105 TJ = 125 °C VCC = 200 V IF = 50 A dI/dt = 10 A/μs mJ ns Fullsquare 10 TJ = 25 °C nC μs A ns nC Note (1) Energy losses include “tail” and diode reverse recovery www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products THERMISTOR ELECTRICAL SPECIFICATIONS (T = 25 °C unless otherwise specified) PARAMETER SYMBOL Resistance R25 B value B TEST CONDITIONS MIN. TYP. MAX. 4538 5000 5495 TJ = 100 °C 468.6 493.3 518 TJ = 25 °C/50 °C 3307 3375 3443 UNITS Ω °K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface SYMBOL MIN. TYP. MAX. RthJC (IGBT) - - 0.26 RthJC (DIODE) - - 0.56 RthCS (MODULE) Mounting torque (M5) Weight UNITS °C/W - 0.02 - 2.7 - 3.3 Nm - 170 - g 1000 160 140 100 100 10 IC (A) TC (°C) 120 80 60 1 40 0.1 20 0 0.01 0 20 40 60 80 100 120 1 10 100 1000 IC (A) VCE (V) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Forward SOA TC = 25 °C; TJ ≤ 150 °C 10000 1000 500 400 IC (A) PD (W) 100 300 200 10 100 0 1 0 20 40 60 80 100 120 140 160 10 100 TC (°C) 10000 VCE (V) Fig. 2 - Power Dissipation vs. Case Temperature Document Number: 93172 Revision: 13-Jan-10 1000 Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V For technical questions, contact: [email protected] www.vishay.com 3 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A 160 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 7 6 9 11 15 17 19 VGE (V) VCE (V) Fig. 8 - Typical VCE vs. VGE TJ = 25 °C Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs 20 160 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 ICE = 75A ICE = 50A 18 16 ICE = 25A 14 VCE (V) 100 ICE (A) 13 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 7 8 9 11 VCE (V) 17 19 Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 300 TJ = 25°C TJ = 125°C 250 200 ICE (A) IF (A) 15 VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 μs 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 13 150 100 Tj = 25°C Tj = 125°C 50 0 0.0 1.0 2.0 3.0 4.0 5.0 5 6 7 8 9 10 11 12 VF (V) VGE (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 μs Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 μs www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products 1000 1 tdOFF Switching Time (ns) TJ = 125°C ICES (mA) 0.1 0.01 tdON tF 100 tR TJ = 25°C 10 0.001 400 600 800 1000 20 1200 30 40 50 Fig. 11 - Typical Zero Gate Voltage Collector Current 80 Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V 5.5 14000 5 12000 TJ = 25°C 4.5 10000 Energy (μJ) Vgeth (V) 70 IC (A) VCES (V) 4 TJ = 125°C 3.5 8000 EON 6000 3 4000 2.5 2000 2 EOFF 0 0 0.2 0.4 0.6 0.8 1 0 10 20 30 40 50 RG (Ω) IC (mA) Fig. 12 - Typical Threshold Voltage Fig. 15 - Typical Energy Loss vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V 2500 Switching Time (ns) 10000 2000 Energy (μJ) 60 EON EOFF 1500 1000 tdOFF tdON tF 100 tR 1000 30 40 50 60 70 80 10 0 10 IC (A) 30 40 50 RG (Ω) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V Document Number: 93172 Revision: 13-Jan-10 20 Fig. 16 - Typical Switching Time vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V For technical questions, contact: [email protected] www.vishay.com 5 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A 100 120 100 80 5 ohm 60 IRR (A) IRR (A) 80 60 27 ohm 40 40 20 47 ohm 20 0 0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 10 20 30 40 50 RG (Ω) IF (A) Fig. 17 - Typical Diode IRR vs. IF TJ = 125 °C Fig. 19 - Typical Diode IRR vs. Rg TJ = 125 °C; IF = 75 A 100 16 14 80 10 60 VGE (V) IRR (A) 12 40 typical value 8 6 4 20 2 0 400 800 1200 1600 0 2000 0 100 200 300 400 500 600 700 dIF / dt (A/ μs) QG, Total Gate Charge (nC) Fig. 18 - Typical Diode IRR vs. dIF/dt VCC = 600 V; IF = 75 A Fig. 20 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 Thermal Response (ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.001 0.0001 1E-005 1E-006 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products Driver L D.U.T. 0 + VCC - D + C - 1K 900 V D.U.T. Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. C.T.2 - RBSOA Circuit Fig. C.T.4 - Switching Loss Circuit R= D.U.T. VCC ICM + VCC Rg Fig. C.T.5 - Resistive Load Circuit Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: [email protected] www.vishay.com 7 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A ORDERING INFORMATION TABLE Device code G B 75 Y F 120 U T 1 2 3 4 5 6 7 8 1 - Insulated gate bipolar transistor (IGBT) 2 - B = IGBT Generation 5 3 - Current rating (75 = 75 A) 4 - Circuit configuration (Y = Fourpack) 5 - Package indicator (F = ECONO2) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (U = Ultrafast IGBT) 8 - T = Thermistor CIRCUIT CONFIGURATION C2 C1 48 49 21 QB3 QB1 G1 Aux1 41 43 5 6 C/E1 QB2 22 G3 28 Aux3 29 15 16 C/E2 17 QB4 7 G2 37 G4 32 Aux2 38 Aux4 33 10 12 46 47 E1 23 24 E2 RT1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 www.vishay.com/doc?95252 For technical questions, contact: [email protected] Document Number: 93172 Revision: 13-Jan-10 Outline Dimensions Vishay Semiconductors ECONO2 4PAK DIMENSIONS in millimeters (inches) Z Y 20.5 13.2 ± 0.15 1.25 0.8 - 0.02 - 0.06 105 ± 0.1 34.29 30.48 34.29 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 X 2:1 0.8 ± 0.03 3.81 21 ± 0.03 21 22 49 48 2 4 5 6 7 8 10 12 15 16 17 19 7.62 7.62 47 46 10.5 5.5 ± 0.05 11.43 11.43 33 32 30 29282726 42 ± 0.15 38 373635 21 ± 0.03 4140 23 24 4443 45.4 ± 0.2 + 1.0 - 0.5 7.62 7.62 11.43 15.24 19.05 22.86 30.48 39.49 19.05 22.86 26.67 34.29 39.49 7.5 0 -03 93 ± 0.15 107.8 ± 0.2 Detail R3 Z 2:1 Y 2:1 1 0.5 10.5 0.6 0.8 ± 0.03 83 Document Number: 95252 Revision: 29-Nov-07 0.85 1.25 - 0.02 - 0.06 0 - 0.2 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1