Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. unit:mm 2009B [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K Specifications JEDEC : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions 2SB631, D600 2SB631K, D600K Unit Collector-to-Emitter Voltage VCBO VCEO Emitter-to-Base Voltage VEBO (–)5 V IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 1 W Junction Temperature Tj Storage Temperature Tstg Collector Current (–)100 (–)120 V (–)100 (–)120 V Tc=25˚C 8 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol Ratings Conditions V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ICBO IE=(–)10µA, IC=0 VCB=(–)50V, IE=0 IEBO VEB=(–)4V, IC=0 min typ max Unit B631, D600 (–)100 V B631K, D600K (–)120 V B631, D600 (–)100 V B631K, D600K (–)120 V (–)5 V (–)1 µA (–)1 µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4 2SB631, 631K/2SD600, 600K Parameter Symbol DC Current Gain Gain-Bandwidth Product Output Capacitance Conditions hFE1 VCE=(–)5V, IC=(–)50mA 60* hFE2 VCE=(–)5V, IC=(–)500mA 20 fT VCE=(–)10V, IC=(–)50mA Cob Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Ratings min typ max Unit 320* (110) MHz 130 MHz VCB=(–)10V, f=1MHz (30)20 VCE(sat) VBE(sat) IC=(–)500mA, IB=(–)50mA (–)0.15 (–)0.4 IC=(–)500mA, IB=(–)50mA (–)0.85 (–)1.2 tf See specified Test Circuit (80) ns 100 ns toff See specified Test Circuit (100) ns 500 ns (600) ns 700 ns Fall Time Turn-OFF Time Storage Time tstg See specified Test Circuit pF V V * : The 2SB631/2SD600 are classified by 50mA hFE as follows : 60 D 120 100 E 200 160 F 320 Switching Time Test Circuit No.346–2/4 2SB631, 631K/2SD600, 600K No.346–3/4 2SB631, 631K/2SD600, 600K Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice. PS No.346–4/4