Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1216/2SD1816] Features · Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1216/2SD1816] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92098HA (KT)/8229MO/4087TA, TS No.2540–1/5 2SB1216/2SD1816 ( ) : 2SB1216 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (–)120 V (–)100 V VEBO IC (–)6 V (–)4 A Collector Current (Pulse) ICP (–)8 A Collector Dissipation PC 1 W Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Tc=25˚C 20 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)3A fT VCE=(–)10V, IC=(–)0.5A Gain-Bandwidth Product Output Capacitance Ratings Conditions Cob VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)0.2A Base-to-Emitter Saturation Voltage VBE(sat) min 70* Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time IE=(–)10µA, IC=0 See specified Test Circuit Storage Time tstg See specified Test Circuit tf Unit (–)1 µA (–)1 µA 400* (130) MHz 180 MHz (65)40 V(BR)EBO ton Fall Time max 40 IC=(–)2A, IB=(–)0.2A V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Base Breakdown Voltage typ 400 mV (–200) (–500) mV (–)0.9 (–)1.2 V (–)120 V (–)100 V (–)6 See specified Test Circuit pF 150 V 100 ns (800) ns 900 ns 50 ns * : The 2SB1216/2SD1816 are classified by 0.5A hFE as follows : 70 Q 140 100 R 200 140 S 280 200 T 400 Switching Time Test Circuit No.2540–2/5 2SB1216/2SD1816 No.2540–3/5 2SB1216/2SD1816 No.2540–4/5 2SB1216/2SD1816 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice. PS No.2540–5/5