SANYO 55GN01S

55GN01S
Ordering number : ENN7687
NPN Epitaxial Planar Silicon Transistor
55GN01S
UHF Wide-band Low-noise Amplifier
Applications
Features
•
•
•
High cutoff frequency : fT= 5.5GHz typ.
High gain : S21e2=10dB typ (f=1GHz).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
Collector-to-Emitter Voltage
VCEO
10
V
Emitter-to-Base Voltage
VEBO
3
V
Collector Current
V
70
mA
100
mW
Junction Temperature
IC
PC
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Dissipation
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT1
Output Capacitance
fT2
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
Noise Figure
2
S21e
NF
Conditions
VCB=10V, IE=0
VEB=2V, IC=0
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
Ratings
min
typ
100
3.0
0.1
µA
1
µA
180
4.5
GHz
5.5
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Unit
max
1.0
7
GHz
1.2
pF
0.6
pF
10
dB
1.9
dB
Marking : ZD
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52004 TS IM TA-100819 No.7687-1/6
55GN01S
Package Dimensions
unit : mm
2106A
0.75
0.6
0.3
0.4 0.8 0.4
1.6
3
2
0.1
0.2
0.1max
1
0~0.1
0.5 0.5
1.6
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
IC -- VCE
50
40
70
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE=5V
A
0.30m
45
0.25mA
35
0.20mA
30
IC -- VBE
80
25
0.15mA
20
0.10mA
15
0.05mA
10
60
50
40
30
20
10
5
IB=0
0
0
1
2
3
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
0
10
0
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
3
0.2
IT06252
f T -- IC
10
VCE=5V
VCE=5V
Gain-Bandwidth Product, f T -- GHz
DC Current Gain, hFE
2
100
7
5
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7 100
IT06254
1.2
IT06253
7
5
3
2
1.0
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT06693
No.7687-2/6
55GN01S
S21e2 -- IC
f=1MHz
10
8
6
4
2
1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- mA
100
IT06694
1.0
7
5
2
3
5
7
2
1.0
3
5
7
VCE=3V
f=1GHz
ZO=50Ω
2
7
5
3
0.1
2
3
5
7
1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
3
IT06696
PC -- Ta
120
3
IT06695
NF -- IC
3.0
f=1MHz
1.0
2
10
Collector-to-Base Voltage, VCB -- V
Noise Figure, NF -- dB
Reverse Transfer Capacitance, Cre -- pF
2
3
0.1
7
Cre -- VCB
3
Collector Dissipation, PC -- mW
Cob -- VCB
3
VCE=5V
f=1GHz
Output Capacitance, Cob -- pF
Forward Transfer Gain, S21e2 -- dB
12
2.5
2.0
1.5
1.0
1.0
2
3
5
Collector Current, IC -- mA
7
10
IT05674
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06697
No.7687-3/6
55GN01S
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
S11
∠S11
S21
∠S21
S12
∠S12
S22
∠S22
100
0.818
--45.11
12.945
149.89
0.040
68.19
0.882
--23.66
200
0.723
--79.29
10.378
128.84
0.063
53.36
0.708
--38.25
400
0.619
--119.57
6.589
105.34
0.082
43.85
0.504
--50.00
600
0.590
--140.45
4.732
92.21
0.094
44.40
0.422
--54.83
800
0.566
--153.95
3.677
82.43
0.106
46.39
0.387
--58.60
1000
0.553
--163.02
3.000
74.67
0.118
48.68
0.369
--62.43
1200
0.546
--170.25
2.547
67.70
0.132
51.04
0.368
--65.91
1400
0.536
--176.36
2.214
61.57
0.145
53.10
0.374
--70.19
1600
0.529
178.47
1.979
55.95
0.162
54.51
0.376
--73.95
1800
0.518
173.34
1.790
50.69
0.178
55.69
0.387
--77.80
2000
0.515
168.18
1.642
45.28
0.197
56.79
0.393
--81.33
2200
0.506
163.01
1.499
40.79
0.216
56.84
0.403
--85.56
2400
0.502
158.27
1.394
36.26
0.236
56.80
0.415
--89.57
2600
0.496
153.59
1.299
32.33
0.257
56.63
0.423
--93.86
2800
0.495
148.84
1.220
28.79
0.281
56.40
0.431
--98.20
3000
0.488
144.62
1.152
25.31
0.307
55.34
0.440
--101.75
∠S11
S21
∠S21
S12
∠S12
S22
∠S22
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
S11
100
0.695
--65.56
19.851
138.84
0.033
62.31
0.773
--33.54
200
0.600
--104.03
13.662
117.33
0.049
51.12
0.552
--48.13
400
0.540
--139.63
7.785
97.63
0.065
51.35
0.370
--56.25
600
0.532
--154.82
5.405
87.15
0.081
53.63
0.312
--60.19
800
0.522
--165.18
4.152
79.02
0.099
57.04
0.294
--64.03
1000
0.517
--171.99
3.356
72.24
0.115
59.04
0.283
--67.23
1200
0.511
--177.34
2.845
66.21
0.134
59.83
0.284
--70.66
1400
0.507
177.38
2.469
60.71
0.153
59.98
0.294
--74.85
1600
0.498
173.40
2.199
55.55
0.172
60.01
0.300
--78.33
1800
0.493
169.08
1.991
50.67
0.191
59.81
0.309
--82.14
2000
0.489
164.42
1.824
45.74
0.212
59.31
0.315
--85.02
2200
0.483
159.69
1.665
41.25
0.234
58.55
0.327
--88.98
2400
0.479
155.72
1.549
36.93
0.254
57.22
0.337
--92.57
2600
0.474
151.50
1.446
32.96
0.272
56.69
0.345
--96.49
2800
0.474
146.89
1.358
29.71
0.296
55.40
0.353
--100.19
3000
0.469
142.97
1.283
26.10
0.318
54.29
0.364
--103.38
No.7687-4/6
55GN01S
S Parameters (Common emitter)
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
S11
∠S11
S21
∠S21
S12
∠S12
S22
∠S22
100
0.570
--89.86
25.811
127.74
0.027
57.86
0.639
--42.89
200
0.520
--126.23
15.701
108.51
0.038
55.16
0.416
--54.85
400
0.503
--153.83
8.426
92.69
0.057
59.71
0.276
--59.96
600
0.506
--164.64
5.772
83.96
0.077
63.42
0.242
--62.99
800
0.504
--172.52
4.408
76.83
0.098
64.34
0.234
--67.02
1000
0.498
--177.66
3.555
70.62
0.116
64.27
0.228
--70.93
1200
0.496
177.98
3.013
65.15
0.139
64.39
0.235
--74.09
1400
0.492
173.75
2.611
59.99
0.158
63.46
0.246
--78.62
1600
0.488
170.09
2.319
55.01
0.179
63.02
0.252
--81.39
1800
0.481
166.42
2.096
50.36
0.200
61.78
0.262
--85.56
2000
0.481
162.19
1.917
45.65
0.221
60.80
0.268
--87.90
2200
0.472
158.01
1.760
41.21
0.240
59.60
0.283
--91.47
2400
0.472
154.06
1.633
37.24
0.260
57.83
0.293
--94.81
2600
0.467
149.87
1.523
33.18
0.280
56.85
0.300
--98.53
2800
0.467
145.82
1.434
29.86
0.304
55.35
0.311
--102.06
3000
0.462
142.08
1.354
26.43
0.326
53.94
0.318
--104.23
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
S11
∠S11
S21
∠S21
S12
∠S12
S22
∠S22
100
0.523
--103.16
27.751
122.53
0.024
59.02
0.569
--46.47
200
0.498
--136.49
16.132
104.97
0.035
57.80
0.361
--56.04
400
0.498
--159.57
8.503
90.63
0.054
63.85
0.244
--59.31
600
0.503
--168.52
5.802
82.53
0.076
67.20
0.219
--62.34
800
0.500
--175.28
4.429
75.68
0.097
66.04
0.215
--66.55
1000
0.499
--179.85
3.582
69.78
0.118
66.40
0.215
--70.37
1200
0.498
176.25
3.013
64.35
0.138
66.22
0.222
--73.72
1400
0.494
172.08
2.615
59.21
0.161
65.47
0.233
--78.23
1600
0.489
169.05
2.324
54.35
0.180
64.05
0.241
--81.44
1800
0.484
165.09
2.102
49.78
0.200
62.79
0.250
--85.19
2000
0.483
161.02
1.925
45.03
0.222
61.56
0.258
--87.77
2200
0.476
157.15
1.762
40.66
0.243
60.04
0.273
--90.81
2400
0.476
153.18
1.634
36.62
0.263
58.71
0.286
--94.60
2600
0.471
149.16
1.524
32.74
0.283
57.48
0.294
--98.35
2800
0.471
145.15
1.436
29.38
0.307
55.99
0.302
--101.47
3000
0.467
141.40
1.355
25.99
0.329
54.46
0.312
--103.95
No.7687-5/6
55GN01S
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2004. Specifications and information herein are subject
to change without notice.
PS No.7687-6/6