Ordering number:ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions · High gain : S21e =10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) 2 unit:mm 2159 [2SC5538] 0.3 1.4 0.25 0.1 2 0.3 1 0.45 1.4 0.8 3 0.2 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO VEBO 10 V Collector Current IC 100 mA Collector Dissipation PC Tj 100 mW Junction Temperature 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage 2 V Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 µA Emitter Cutoff Current IEBO 10 µA DC Current Gain hFE1 hFE2 VEB=1V, IC=0 VCE=3V, IC=7mA fT Gain-Bandwidth Product VCE=3V, IC=30mA VCE=3V, IC=7mA 110 200 100 3 5.2 GHz Output Capacitance Cob VCB=3V, f=1MHz 1.0 Reverse Transfer Capacitance Cre VCB=3V, f=1MHz 0.7 pF 10.5 dB Forward Transfer Gain Noise Figure | S21e |2 VCE=3V, IC=7mA, f=1GHz NF VCE=3V, IC=7mA, f=1GHz 8 1.4 1.5 2.5 pF dB Marking : NA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1099TS (KOTO) TA-1680 No.6291–1/4 2SC5538 IC -- VCE 35 IC -- VBE 32 VCE=3V 200µA 25 Collector Current, IC – mA 180µA 160µA 30 Collector Current, IC – mA 28 140µA 120µA 20 100µA 15 80µA 60µA 10 40µA 5 20µA 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE – V 12 8 0 0 0.2 Gain-Bandwidth Product, fT – GHz 2 100 7 5 0.6 0.8 1.0 1.2 IT01313 f T -- IC 2 VCE=3V 3 0.4 Base-to-Emitter Voltage, VBE – V IT01312 5 DC Current Gain, hFE 16 10 hFE -- IC 7 20 4 IB=0 0 24 VCE=3V f=1GHz 10 7 5 3 2 1.0 7 3 5 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC – mA 7 5 3 2 0.1 5 7 2 10 3 5 7 IT01315 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre – pF 1.0 3 3 f=1MHz 2 2 1.0 Collector Current, IC – mA Cob -- VCB 3 Output Capacitance, Cob – pF 7 7 100 2 IT01314 2 1.0 7 5 3 2 0.1 7 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 7 0.1 3 IT01316 3 5 7 1.0 2 3 5 7 2 10 3 IT01317 S21e -- IC 2 NF -- IC 14 VCE=3V f=1GHz VCE=3V f=1GHz 12 Noise Figure, NF – dB 2 8 Forward Transfer Gain, S21e – dB 10 2 Collector-to-Base Voltage, VCB -- V 6 4 2 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – mA 3 5 7 100 IT01318 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – mA 5 7 100 IT01319 No.6291–2/4 2SC5538 PC -- Ta Collector Dissipation, PC – mW 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – °C 160 IT01320 S Parameters (Common emitter) VCE=1V, IC=3mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.874 –40.6 8.627 152.3 0.062 67.9 0.918 –23.4 200 0.785 –71.6 6.874 132.5 0.101 52.1 0.748 –41.7 400 0.651 –114.8 4.701 107.3 0.135 37.1 0.537 –57.6 600 0.613 –136.9 3.365 92.8 0.152 31.1 0.430 –65.6 800 0.581 –153.9 2.716 81.9 0.155 29.9 0.361 –74.3 1000 0.568 –164.2 2.218 73.4 0.161 30.0 0.326 –80.2 1200 0.556 –172.0 1.863 66.2 0.170 30.5 0.300 –86.1 1400 0.563 –178.1 1.626 59.6 0.177 32.7 0.297 –92.3 1600 0.558 175.4 1.473 53.9 0.185 35.4 0.306 –96.5 1800 0.560 168.9 1.345 48.1 0.196 37.4 0.313 –100.6 2000 0.567 163.1 1.230 42.5 0.205 38.0 0.335 –102.9 VCE=3V, IC=7mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.789 –48.3 16.232 147.7 0.039 66.1 0.862 –27.2 200 0.670 –83.7 12.431 126.4 0.061 53.0 0.673 –44.6 400 0.552 –123.8 7.607 104.7 0.081 45.2 0.438 –59.1 600 0.522 –145.3 5.401 92.7 0.094 45.9 0.333 –65.1 800 0.504 –158.5 4.155 84.1 0.106 48.2 0.290 –68.7 1000 0.488 –169.1 3.425 77.1 0.121 49.1 0.270 –71.0 1200 0.478 –176.1 2.849 71.0 0.136 51.0 0.253 –74.7 1400 0.481 178.4 2.511 65.6 0.152 52.2 0.239 –79.6 1600 0.478 172.7 2.237 60.7 0.167 52.8 0.240 –82.8 1800 0.492 167.4 2.016 55.5 0.185 53.2 0.245 –86.7 2000 0.489 162.0 1.844 50.5 0.200 52.7 0.248 –90.0 No.6291–3/4 2SC5538 VCE=5V, IC=20mA, ZO=50Ω Freq (MHz) | S11 | ∠ S11 | S21 | ∠ S21 | S12 | ∠ S12 | S22 | ∠ S22 100 0.643 –66.4 26.381 137.4 0.029 62.8 0.748 –36.3 200 0.530 –104.6 17.543 116.5 0.041 54.2 0.531 –52.5 400 0.459 –140.3 9.835 98.9 0.058 55.4 0.322 –62.7 600 0.447 –157.2 6.805 89.4 0.074 59.2 0.246 –65.5 800 0.440 –168.4 5.210 82.4 0.092 61.4 0.213 –68.6 1000 0.434 –175.9 4.194 76.6 0.110 61.9 0.199 –70.2 1200 0.437 177.1 3.518 71.5 0.129 62.3 0.191 –72.9 1400 0.437 173.0 3.077 66.7 0.148 61.8 0.184 –76.5 1600 0.438 168.4 2.730 62.5 0.166 61.6 0.181 –80.9 1800 0.439 164.2 2.459 58.0 0.186 60.7 0.186 –84.8 2000 0.444 159.1 2.249 53.5 0.203 59.5 0.192 –87.3 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1999. Specifications and information herein are subject to change without notice. PS No.6291–4/4