SANYO FC11

Ordering number:EN3154
FC11
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Features
Package Dimensions
· Adoption of FBET process.
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
· Common source.
unit:mm
2070
[FC11]
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
Electrical Connection
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSX
VGDS
–40
V
Gate Current
IG
10
mA
Drain Current
Gate-to-Drain Voltage
Total Dissipation
ID
PD
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Allowable Power Dissipation
40
V
10
mA
200
mW
300
mW
150
˚C
–55 to +150
˚C
1unit
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Ratings
Conditions
min
V(BR)GDS IG=10µA, VDS=0
Gate Cutoff Current
IGSS
Cutoff Voltage
VGS(off)
∆VGS
Gate-to-Source Voltage Drop
Drain Current
IDSS
Drain Current Ratio
Forward Transfer Admittance
| Yfs |
Forward Transfer Admittance Ratio
typ
max
–40
V
VGS=–20V, VDS=0V
–1.0
VDS=10V, ID=1µA
|VGS large – VGS small |, VDS=10V, ID=1mA
–0.3
VDS=10V, VGS=0V
VDS=10V, IDSS small/IDSS large
1.2*
Unit
–0.9
–1.8
nA
V
30
mV
6.0*
mA
0.9
VDS=10V, VGS=0V, f=1kHz
4.5
VDS=10V, |Yfs|small / |Yfs|large
0.9
9.0
mS
pF
Input Capacitacnce
Ciss
VDS=10V, VGS=0V, f=1MHz
9.0
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
2.1
pF
VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz
1.5
dB
Noise Figure
NF
Note*:The FC11 is classified by IDSS as follows (unit:mA)
1.2
D
3.0
2.5
E
6.0
Marking:11
IDSS rank:D,E
The Specifications shown above are for each individual
transistor.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/7259TA, TS No.3154-1/3
FC11
No.3154-2/3
FC11
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3154-3/3