SANYO FX602

Ordering number:EN4885
FX602
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX602 is formed with two chips, each being
equivalent to the 2SK2152, placed in one package.
· Matched pair characteristics.
unit:mm
2120
[FX602]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±15
V
2
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
8
A
Allowable Power Dissipation
PD
PD
Tc=25˚C, 1unit
6
W
1.5
W
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
· Marking:602
Mounted on ceramic board (750mm2×0.8mm) 1unit
Mounted on ceramic board (750mm2×0.8mm)
2
W
150
˚C
–55 to +150
˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0108 No.4885-1/4
FX602
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
V(BR)GSS
IDSS
Forward Transfer Admittance
IGSS
VGS(off)
| Yfs |
Static Drain-to-Source ON-State Resistance
RDS(on)
Cutoff Voltage
RDS(on)
Conditions
ID=1mA, VGS=0
IG=±100µA, VDS=0
Ratings
min
typ
max
20
V
±1 5
V
VDS=20V, VGS=0
VGS=±12, VDS=0
VGS=10V, ID=1mA
VDS=10V, ID=1A
0.8
1.2
Unit
100
µA
±10
µA
2.0
2
V
S
ID=1A, VGS=10V
ID=1A, VGS=4V
130
180
mΩ
170
250
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
170
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
145
pF
Reverse Transfer Capacitance
Crss
50
pF
Turn-ON Delay Time
td(on)
VDS=10V, f=1MHz
See Specified Test Circuit
10
ns
tr
See Specified Test Circuit
12
ns
td(off)
See Specified Test Circuit
50
ns
tf
See Specified Test Circuit
35
ns
IS=2A, VGS=0
1.0
V
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VSD
No.4885-2/4
FX602
No.4885-3/4
FX602
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4885-4/4