Ordering number:EN4885 FX602 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX602 is formed with two chips, each being equivalent to the 2SK2152, placed in one package. · Matched pair characteristics. unit:mm 2120 [FX602] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±15 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 8 A Allowable Power Dissipation PD PD Tc=25˚C, 1unit 6 W 1.5 W Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg · Marking:602 Mounted on ceramic board (750mm2×0.8mm) 1unit Mounted on ceramic board (750mm2×0.8mm) 2 W 150 ˚C –55 to +150 ˚C Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO (KOTO) TA-0108 No.4885-1/4 FX602 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage G-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS V(BR)GSS IDSS Forward Transfer Admittance IGSS VGS(off) | Yfs | Static Drain-to-Source ON-State Resistance RDS(on) Cutoff Voltage RDS(on) Conditions ID=1mA, VGS=0 IG=±100µA, VDS=0 Ratings min typ max 20 V ±1 5 V VDS=20V, VGS=0 VGS=±12, VDS=0 VGS=10V, ID=1mA VDS=10V, ID=1A 0.8 1.2 Unit 100 µA ±10 µA 2.0 2 V S ID=1A, VGS=10V ID=1A, VGS=4V 130 180 mΩ 170 250 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 170 pF Output Capacitance Coss VDS=10V, f=1MHz 145 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) VDS=10V, f=1MHz See Specified Test Circuit 10 ns tr See Specified Test Circuit 12 ns td(off) See Specified Test Circuit 50 ns tf See Specified Test Circuit 35 ns IS=2A, VGS=0 1.0 V Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD No.4885-2/4 FX602 No.4885-3/4 FX602 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4885-4/4