STMICROELECTRONICS 74ACT11B

74ACT11
TRIPLE 3-INPUT AND GATE
PRELIMINARY DATA
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HIGH SPEED: tPD = 6.5 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 4 µA (MAX.) at TA = 25 oC
COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN), VIL = 0.8V (MAX)
50Ω TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 24 mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 11
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT11 is an advanced high-speed CMOS
TRIPLE 3-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C2MOS technology. It is ideal for low
power applications mantaining high speed
B
M
(Plastic Package)
(Micro Package)
ORDER CODES :
74ACT11B
74ACT11M
operation similar to equivalent Bipolar Schottky
TTL.
The internal circuit is composed of 4 stages
including buffer output, which enables high noise
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
May 1997
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74ACT11
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
1, 3, 9
1A to 3A
Data Inputs
NAME AND F UNCTIO N
2, 4, 10
1B to 3B
Data Inputs
13, 5, 11
1C to 3C
Data Inputs
12, 6, 8
1Y to 3Y
Data Outputs
7
GND
Ground (0V)
14
VCC
Positive Supply Voltage
TRUTH TABLE
A
B
C
Y
L
X
X
L
X
L
X
L
X
X
L
L
H
H
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
-0.5 to +7
V
VI
DC Input Voltage
-0.5 to VCC + 0.5
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
± 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 50
mA
± 150
mA
ICC or IGND DC VCC or Ground Current
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
C
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Valu e
Unit
Supply Voltage
4.5 to 5.5
V
VI
Input Voltage
0 to VCC
V
VO
Output Voltage
0 to VCC
VCC
Top
dt/dv
Parameter
Operating Temperature:
Input Rise and Fall Time VCC = 4.5 to 5.5V (note 1)
1) VIN from 0.8 V to 2.0 V
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-40 to +85
8
V
o
C
ns/V
74ACT11
DC SPECIFICATIONS
Symbol
Parameter
Test Con dition s
VIH
High Level Input Voltage
4.5
VO = 0.1 V or
VCC - 0.1 V
5.5
VIL
Low Level Input Voltage
4.5
High Level Output
Voltage
4.5
(*)
VI =
V IH or
V IL
5.5
4.5
5.5
VOL
Low Level Output
Voltage
4.5
(*)
VI =
V IH or
V IL
5.5
4.5
1.5
5.5
Max.
Min .
2.0
2.0
1.5
2.0
Max.
V
1.5
0.8
0.8
1.5
0.8
0.8
4.4
4.49
4.4
IO=-50 µA
5.4
5.49
5.4
IO=-24 mA
3.86
3.76
IO=-24 mA
4.86
4.76
IO=50 µA
0.001
0.1
0.1
0.001
0.1
0.1
IO=24 mA
0.36
0.44
IO=24 mA
0.36
0.44
V
±1
µA
1.5
mA
40
µA
VOLD = 1.65 V max
75
mA
VOHD = 3.85 V min
-75
mA
VI = VCC or GND
ICCT
Max ICC /Input
5.5
VI = VCC -2.1 V
ICC
Quiescent Supply
Current
5.5
VI = VCC or GND
IOLD
Dynamic Output Current
(note 1, 2)
5.5
±0.1
V
V
IO=50 mA
5.5
IOHD
Typ.
2.0
IO=-50 µA
Input Leakage Current
II
Unit
o
-40 to 85 C
Min.
VO = 0.1 V or
VCC - 0.1 V
5.5
VOH
Value
o
T A = 25 C
V CC
(V)
0.6
4
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*) All outputs loaded.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = t f =3 ns)
Symbol
Parameter
T est Cond ition
V CC
(V)
tPLH
tPHL
Propagation Delay Time
(*)
5.0
Value
o
o
-40 to 85 C
T A = 25 C
Min. Typ. Max. Min . Max.
1.5
6.5
9.0
1.0
9.5
Unit
ns
(*) Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Test Con dition s
V CC
(V)
Value
o
T A = 25 C
Min.
Typ.
Max.
Unit
o
-40 to 85 C
Min .
Max.
CIN
Input Capacitance
5.0
4.5
pF
C PD
Power Dissipation
Capacitance (note 1)
5.0
25
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/n (per circuit)
3/7
74ACT11
TEST CIRCUIT
CL = 50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 500Ω or equivalent
RT =ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
4/7
74ACT11
Plastic DIP-14 MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
1.39
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
5/7
74ACT11
SO-14 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
E
5.8
8.75
0.336
6.2
0.228
0.344
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 (max.)
P013G
6/7
74ACT11
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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