STMICROELECTRONICS 74V1T126S

74V1T126

SINGLE BUS BUFFER (3-STATE)
PRELIMINARY DATA
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HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
COMPATIBLE WITH TTL OUTPUTS:
VIH = 2V (MIN), VIL = 0.8V (MAX)
POWER DOWN PROTECTION ON INPUT
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T126 is an advanced high-speed
CMOS SINGLE BUS BUFFER fabricated with
sub-micron silicon gate and double-layer metal
wiring C2MOS technology.
S
(SOT23-5L)
C
(SC-70)
ORDER CODE:
74V1T126S
74V1T126C
3-STATE control input G has to be set LOW to
place the output into the high impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
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74V1T126
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
1
1G
Output Enable Input
NAME AND FUNCT ION
2
1A
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
VCC
Positive Supply Voltage
TRUTH TABLE
A
G
Y
X
L
Z
L
H
L
H
H
H
X:”H” or ”L” Z:High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Supply Voltage
-0.5 to +7.0
V
VI
DC Input Voltage
-0.5 to +7.0
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
- 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 25
mA
± 50
mA
VCC
Parameter
ICC or IGND DC VCC or Ground Current
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
260
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
VI
Input Voltage
VO
Output Voltage
Top
Operating Temperature
dt/dv
Input Rise and Fall Time (see note 1) (V CC = 5.0 ± 0.5V)
1) VIN from 0.8V to 2 V
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Valu e
Unit
4.5 to 5.5
V
0 to 5.5
V
0 to VCC
-40 to +85
0 to 20
V
o
C
ns/V
74V1T126
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Min.
2
VIH
High Level Input
Voltage
4.5 to 5.5
VIL
Low Level Input
Voltage
4.5 to 5.5
VOH
High Level Output
Voltage
VOL
IOZ
II
Low Level Output
Voltage
High Impedance
Output Leakage
Current
Input Leakage Current
Value
T A = 25 o C
V CC
(V)
Typ .
Un it
-40 to 85 o C
Max.
Min .
Max.
2
0.8
V
0.8
V
4.5
I O =-50 µA
4.4
4.5
IO=-8 mA
3.94
4.5
I O=50 µA
0.1
0.1
4.5
IO=8 mA
0.36
0.44
VI = VIH or VIL
VO = VCC or GND
±0.25
±2.5
µA
5.5
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
4.5
4.4
V
3.8
0.0
V
ICC
Quiescent Supply
Current
5.5
VI = VCC or GND
1
10
µA
∆ICC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at VCC or
GND
1.35
1.5
mA
AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns)
Symb ol
Parameter
Test Co ndition
Value
o
V CC (*)
(V)
CL
(pF )
T A = 25 C
Min. Typ . Max.
Un it
o
-40 to 85 C
Min . Max.
tPLH
tPHL
Propagation Delay
Time
5.0
5.0
15
50
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
ns
tPLZ
tPHZ
Output Disable Time
5.0
5.0
15
50
4.6
6.1
6.8
8.8
1.0
1.0
8.0
10.0
ns
tPZH
tPZL
Output Enable Time
5.0
5.0
15
50
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
ns
(*) Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Value
T A = 25 o C
Min.
Un it
-40 to 85 o C
Typ .
Max.
Input Capacitance
4
10
COUT
Output Capacitance
10
pF
CPD
Power Dissipation
Capacitance (note 1)
14
pF
C IN
Min .
Max.
10
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC
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74V1T126
TEST CIRCUIT
T EST
tPLH , tPHL
SW IT CH
Open
tPZL , tPLZ
VCC
tPZH , tPHZ
GND
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 1KΩ orequivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74V1T126
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
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74V1T126
SOT23-5L MECHANICAL DATA
mm
DIM.
MIN.
6/8
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
35.4
57.1
A1
0.00
0.15
0.0
5.9
A2
0.90
1.30
35.4
51.2
b
0.35
0.50
13.7
19.7
C
0.09
0.20
3.5
7.8
D
2.80
3.00
110.2
118.1
E
2.60
3.00
102.3
118.1
E1
1.50
1.75
59.0
68.8
L
0.35
0.55
13.7
21.6
e
0.95
37.4
e1
1.9
74.8
74V1T126
SC-70 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.80
1.10
31.5
43.3
A1
0.00
0.10
0.0
3.9
A2
0.80
1.00
31.5
39.4
b
0.15
0.30
5.9
11.8
C
0.10
0.18
3.9
7.1
D
1.80
2.20
70.9
86.6
E
1.80
2.40
70.9
94.5
E1
1.15
1.35
45.3
53.1
L
0.10
0.30
3.9
11.8
e
0.65
25.6
e1
1.3
51.2
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74V1T126
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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