AVS12 AUTOMATIC VOLTAGE SWITCH (SMPS < 500W) CONTROLLER ■ ■ ■ ■ ■ 50/60Hz FULL COMPATIBILITY INTEGRATED VOLTAGE REGULATOR TRIGGERING PULSE TRAIN OF THE TRIAC PARASITIC FILTER LOW POWER CONSUMPTION TRIAC ■ ■ ■ ■ HIGH EFFICIENCY AND SAFETY SWITCHING UNINSULATED PACKAGE : AVS12CB VDRM = ± 600V IT(RMS): 12A DESCRIPTION The AVS12 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 500 W. It is composed of 2 devices : • The Controller is optimized for low consumption and high security triggering of the triac. When connected to VSS, the mode input activates an additional option. If the main power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids any high voltage spike when the voltage comes back to 220V. When connected to VDD, the mode input desactivates this option. • The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances. March 1995 A1 A2 P DIP8 (Plastic) G B TO 220AB (Plastic) PIN CONNECTION V 1 8 V Osc / In 2 7 Mode Osc / Out 3 6 N.C. 4 5 V V 1/8 AVS12 BLOCK DIAGRAM AVS1ACP08 VSS 1 VDD 4 VM 8 Supply Reset MR Peak Voltage Dectector A2 Mains mode CP Controller Q Parasitic Filter Zero Crossing Detector S Triggering Q CP Time Controller OSC/IN 2 OSC/OUT 3 AVS12CB MODE 7 Oscillator 2 5 VG G 3 1 4 A1 V DD ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08 Symb ol Parameter Value Min. VSS VI / VO II / IO Tstg Toper Supply voltage Unit Max. - 12 0.5 V I / O voltage VSS - 0.5 0.5 V I / O current - 40 + 40 mA Storage Temperature - 60 + 150 °C 0 + 70 °C Operating Temperature code ”C” TRIAC AVS12CB Tj = 25°C (unless otherwise specified) Symb ol VDRM IT(RMS) ITSM I2t dI/dt dv/dt * Tstg Tj Parameter Value Unit ± 600 V TC = 70°C 12 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) t = 8.3ms t = 10ms 105 100 A I2t value t = 10ms 50 A2s Repetitive F = 50Hz 20 Non Repetitive 100 Tj = 110°C 50 V/µs - 40 + 150 0 + 110 °C Repetitive peak off-state voltage (2) RMS on-state current (360° conduction angle) Critical rate of rise of on-state current (1) Linear slope up to 0.67 VDRM Storage Temperature Operating Junction Temperature (1) Gate supply : IG =100mA (2) Tj = 110°C 2/8 – di/dt = 1A/µs Gate open A/µs * For either polarity of electrode A2 voltage with reference to electrode A1 AVS12 THERMAL RESISTANCES TRIAC AVS12CB Symb ol Rth (j-a) Parameter Junction-to-ambient Rth (j-c) DC Junction-to-case for DC Rth (j-c) AC Junction-to-case for 360° conduction angle ( f= 50Hz) Value Unit 60 °C/W 3 °C/W 2.3 °C/W DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS12CB Symb ol Parameter Value Min. VGD VTM * IDRM * VD = V DRM RL = 3.3kΩ Pulse duration> 20µs ITM = 17A tp = 10ms VDRM rated Gate open Tj = 110°C Unit Max. 0.2 V Tj = 25°C 1.75 V Tj = 25°C 10 Tj = 110°C 500 µA * For either polarity of electrode A2 voltage with reference to electrode A1. 3/8 AVS12 Fig. 1 :Maximum RMS power dissipation versus RMS onstate current (F = 60Hz). (Curves are cut off by (dI/dt)c limitation) Fig. 2 :Correlation between maximum mean power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig. 3 :Non repetitive surge peak on state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig. 4 :On-state characteristics (maximum values). 4/8 AVS12 DC GENERAL ELECTRICAL CHARACTERISTICS (continued) CONTROLLER AVS1ACP08 Toper = 25°C (unless otherwise specified) Symbo l Parameter Value Min T yp Max -9 -8 V 30 mA 0.7 mA VSS (pin 1) (Vreg) Shunt regulator - 10 ISS (pin 1) (Vreg) (@ VSS = 9V) Supply current 0.4 ISS (pin 1) (@ triac gate non connected) Quiescent current f (pin 3) (@ R = 91kΩ) (C = 100pF) Oscillator frequency Unit 42 44 46 kHz VM (pin 8) Vth (3) Peak voltage of detection high-threshold 4.08 4.25 4.42 V VM (pin 8) Vh (3) Peak voltage of detection hysteresis 0.370 0.4 0.420 V Vth (3) Zero-crossing detection high-threshold 95 110 125 mV Vh (3) Zero-crossing detection hysteresis 27 50 80 mV (1) VM (pin 8) VM (pin 8) (2) Vrazht (4) Power-on-reset activation threshold (2) Vrazlt (4) Power-down-reset activation threshold Mode (pin 7) VIL VIH (4) (4) Vreg x 0.89 3 6.5 0.3 Vreg 0.7 Vreg VOL (IVG = 25mA) Leakage current (VG = V DD) VG (pin 5) V 650 + 10 V V mV µA NOTES : (1) : This value gives a typical noise immunity on the zero-crossing detection of 110mV x 1018/18 = 6.20V on the main supply (2) : See following diagram (3) : Voltage referred to VSS (4) : Voltage referred to VDD POWER-ON AND POWER-OFF RESET BEHAVIOUR Undetermined Power-on reset Reset Normal operation power-off Undetermined 0V 0V -2.7V -2.7V Vrazlt Vrazht Vreg = V SS - VDD 5/8 AVS12 TYPICAL APPLICATION 110 V or 220V NTC NTC 1N 4007 2 x 9.1K 1W R1 1M 1% R2 18K 1% AVS12CB option VDD VSS VM 8 5 AVS1ACP08 3 2 A2 390 7 1 91k 1 % VG G A1 4 V DD VSS 100pF 5 % 33µF 16V AVS12 ORDERING INFORMATION AVS12 CONTROLLER TRIAC AVS 1A C P08 AUTOMATIC VOLTAGE SWITCH PACKAGE : DIP 8 IDENTIFICATION OPERATING TEMPERATURE : C = 0/70 °C 6/8 AVS 12 C B AUTOMATIC VOLTAGE SWITCH IDENTIFICATION PACKAGE B: UNINSULATED TO220 OPERATING TEMPERATURE : C = 0/70 °C AVS12 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP CONTROLLER REF. DIMENSIONS Millimetres Min. Typ. Inches Max. Min. Typ. Max. a1 0.7 B 1.39 1.65 0.027 0.054 0.065 B1 0.91 1.04 0.036 0.041 0.50 0.015 b b1 0.5 0.020 0.38 D 0.020 9.8 0.386 E 8.8 0.346 e 2.54 0.100 e4 7.52 F 0.300 7.1 I 0.280 4.8 L 3.3 Z 0.44 0.189 0.130 1.60 0.017 0.063 TO220AB (Plastic) TRIAC REF. DIMENSIONS Millimeters H A I A J G D F O P L C M = N= Max. Min. Max. 10.20 10.40 0.401 0.401 B 14.23 15.87 0.560 0.625 C 12.70 14.70 0.500 0.579 D 5.85 6.85 0.230 0.270 F B Inches Min. 4.50 0.178 G 2.54 3.00 0.100 0.119 H 4.48 4.82 0.176 0.190 I 3.55 4.00 0.139 0.158 J 1.15 1.39 0.045 0.055 L 0.35 0.65 0.013 0.026 M 2.10 2.70 0.082 0.107 N 4.58 5.58 0.18 0.22 O 0.80 1.20 0.031 0.048 P 0.64 0.96 0.025 0.038 Cooling method : C Marking : Type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. 7/8 AVS12 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOM SON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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