BTA40 A/B STANDARD TRIACS .. . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) A2 G A1 DESCRIPTION The BTA40 A/B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. RD91 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit RMS on-state current (360° conduction angle) Tc = 75 °C 40 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 315 A tp = 10 ms 300 I2t value tp = 10 ms 450 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C BTA40-... A/B Unit 400 600 700 800 400 600 700 800 V 1/5 BTA40 A/B THERMAL RESISTANCES Symbol Parameter Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) Value Unit 1.2 °C/W 0.9 °C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) (DC) RL =33Ω RL =33Ω Quadrant Tj=25°C Suffix A B I-II-III MAX 100 50 IV MAX 150 100 mA Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM R L=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III-IV TYP 2.5 µs IL IG=1.2 IGT Tj=25°C I-III-IV TYP II 70 60 200 180 100 80 mA IH * IT= 500mA gate open Tj=25°C MAX VTM * ITM= 60A tp= 380µs Tj=25°C MAX 1.8 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=125°C MAX 6 Linear slope up to VD =67%VDRM gate open Tj=125°C MIN 250 V/µs (dI/dt)c = 18A/ms Tj=125°C MIN 10 V/µs dV/dt * (dV/dt)c * Rated Rated * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 Unit mA BTA40 A/B ORDERING INFORMATION Package BTA (Insulated) IT(RMS) VDRM / VRRM Sensitivity Specification A V A B 40 400 X X 600 X X 700 X X 800 X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 0.1 tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E+1 3/5 BTA40 A/B Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). 4/5 BTA40 A/B PACKAGE MECHANICAL DATA RD91 Plastic L2 a2 LI REF. DIMENSIONS Millimeters Min. A b2 d1 C a1 b1 a1 F E I A B 30.30 1.177 1.193 1.575 0.867 27.00 13.50 16.50 1.063 0.531 0.650 b2 24.00 0.945 C 14.00 0.551 c1 N1 N2 Max. 22.00 B c1 Inches Min. 40.00 29.90 a2 c2 Max. 3.50 0.138 c2 1.95 3.00 0.077 0.118 E 0.70 0.90 0.027 0.035 0.177 F 4.00 4.50 0.157 I 11.20 13.60 0.441 0.535 L1 3.10 3.50 0.122 0.138 L2 1.70 1.90 0.067 0.075 N1 33° 43° 33° 43° N2 28° 38° 28° 38° Marking : type number Weight : 20 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5