BUH615D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) 3 APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV 2 ■ DESCRIPTION The BUH615D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A 12 A IC I CM Collector Peak Current (t p < 5 ms) 1500 V 700 V Base Current 5 A I BM Base Peak Current (t p < 5 ms) 8 A P tot Total Dissipation at T c = 25 o C 55 IB T stg Tj Storage Temperature Max. Operating Junction Temperature December 1999 W -65 to 150 o C 150 o C 1/4 BUH615D THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 0.2 2 mA mA 300 mA I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 6 A I B = 2.5 A 1.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 6 A I B = 2.5 A 1.3 V DC Current Gain IC = 6 A ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 400 V I B1 = 1.5 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A I B1 = 1.25 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A I B1 = 1.5 A Vf Diode Forward Voltage IF = 5 A h FE ∗ V ceflyback V ceflyback ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 T j = 125 o C V CE = 5 V 4 IC = 6 A I B2 = -3 A f = 15625 Hz I B2 = -3 A π = 1050 sin 106 t 10 9 2.7 190 V f = 31250 Hz I B2 = -3 A π = 1200 sin 106 t V 5 3.9 280 µs ns 2.3 350 µs ns 2.3 200 µs ns 2 V BUH615D ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 3/4 BUH615D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4