STMICROELECTRONICS BUL89

BUL89

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
APPLICATIONS
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ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
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SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
850
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitt er-Base Voltage (I C = 0)
IC
I CM
9
V
Collector Current
12
A
Collector Peak Current (tp < 5 ms)
25
A
6
A
I BM
Base Peak Current (t p < 5 ms)
12
A
P t ot
Total Dissipation at T c = 25 o C
110
IB
T stg
Tj
Base Current
St orage Temperature
Max. Operating Junction T emperature
January 2000
W
-65 to 150
o
C
150
o
C
1/6
BUL89
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-Case
Max
o
1.14
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I CEO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 850 V
V CE = 850 V
Collector Cut-off
Current (IB = 0)
V CE = 400 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 10 mA
Min.
Typ .
o
T j = 125 C
L = 25 mH
Max.
Un it
100
500
µA
µA
100
µA
400
V
9
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 5 A
IC = 8 A
I C = 12 A
IB = 1 A
IB = 1.6 A
I B = 2.4 A
1
1.5
5
V
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 5 A
IC = 8 A
IB = 1 A
IB = 1.6 A
1.3
1.6
V
V
DC Current G ain
IC = 5 A
I C = 10 mA
VCE = 5 V
V CE = 5 V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 8 A
V BE(of f) = -5 V
V CL = 350 V
IB1 = 1.6 A
R BB = 0 Ω
L = 200 µH
1.5
55
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 8 A
V BE(of f) = -5 V
V CL = 350 V
o
T j = 100 C
IB1 = 1.6 A
R BB = 0 Ω
L = 200 µH
1.9
80
V EBO
h FE∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/6
Derating Curve
10
10
40
2.3
110
µs
ns
µs
ns
BUL89
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/6
BUL89
Reverse Biased SOA
RBSOA and Inductive Load Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BUL89
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
BUL89
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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