STMICROELECTRONICS BYW77

BYW77P/PI-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in SOD93, or DOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SOD93
(Plastic)
isolated
DOP3I
(Plastic)
BYW77P-200
BYW77PI-200
ABSOLUTE MAXIMUM RATINGS
Symbol
IF(RMS)
IF(AV)
Parameter
RMS forward current
Average forward current
δ = 0.5
A
TOP3I
Tc=100°C
25
tp=10ms
sinusoidal
500
A
- 40 to + 150
- 40 to + 150
°C
°C
Value
Unit
200
V
Storage and junction temperature range
Parameter
Repetitive peak reverse voltage
Ed : 2C
A
25
Tstg
Tj
October 1999
50
Tc=125°C
Surge non repetitive forward current
VRRM
Unit
SOD93
IFSM
Symbol
Value
1/5
BYW77P/PI-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case
Value
Unit
SOD93
1.0
°C/W
DOP3I
1.8
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR *
Test Conditions
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 100°C
VF **
Max.
Unit
25
µA
2.5
mA
V
Tj = 125°C
IF = 20 A
0.85
Tj = 125°C
IF = 40 A
1.00
Tj = 25°C
IF = 40 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.0075 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
Typ.
Max.
IF = 0.5A
IR = 1A
Irr = 0.25A
35
IF = 1A
VR = 30V
dIF/dt = -50A/µs
50
Unit
ns
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 5 ns
10
ns
VFP
Tj = 25°C
IF = 1A
tr = 5 ns
1.5
V
2/5
BYW77P/PI-200
Fig.1 : Average forward power dissipation versus
average forward current.
P F(av)(W)
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
Fig.2 : Peak current versus form factor.
=0.2
=0.1
=0.05
=0.5
T
=1
400
IM
P=20W
=tp/T
300
tp
200
T
P=30W
100
I F(av)(A)
5
10
15
=tp/T
20
P=40W
tp
25
30
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
VFM(V)
K
1.8
1.6
I M(A)
500
Zth(j-c) (tp. )
K =
Rth(j-c)
Tj= 125 oC
1.4
=0.5
0.5
1.2
=0.2
1.0
= 0 .1
0.8
0.6
T
0.2
0.4
0.2
Single pulse
IFM(A)
0.0
0.1
1
10
100
300
1.0E-03
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
300
IM(A)
1.0E-02
1.0E-01
tp
1. 0E+00
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(BYW81PI)
250
250
=tp/T
tp(s)
0.1
IM(A)
200
200
150
Tc=25 oC
150
Tc=25 oC
Tc=75 o C
100
100
IM
50
0
0.001
50
t
t(s)
=0.5
0.01
Tc=50 o C
IM
Tc=125 o C
t(s)
=0.5
0.1
1
0
0.001
Tc=100 o C
t
0.01
0.1
1
3/5
BYW77P/PI-200
Fig.7 : Average current
temperature.
(duty cycle : 0.5) (SOD93)
30
versus
ambient
IF(av)(A)
30
Rth(j-a)=Rth(j-c)
=0.5
ambient
Rth(j-a)=Rth(j-c)
=0.5
T
20
versus
IF(av)(A)
25
25
T
20
15
15
=tp/T
10
5
Fig.8 : Average current
temperature.
(duty cycle : 0.5) (DOP3I)
tp
Rth(j-a)=15 o C/W
5
Tamb( o C)
0
0
20
40
60
80
100
120
140
160
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
20 0
1 90
1 80
1 70
1 60
C(pF)
F=1Mhz Tj=25 oC
Tamb( o C)
20
40
60
80
100
120
140
160
Fig.10 : Recovery charges versus dIF/dt.
QRR(nC)
70
90%CONFIDENCE
IF=IF(av)
Tj=100 OC
60
50
40
Tj=25 O C
30
20
11 0
1 00
1
10
VR(V)
10
1 00
2 00
Fig.11 : Peak reverse current versus dIF/dt.
dIF/dt(A/us)
0
1
10
100
Fig.12 : Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125o C]
IRM(A)
1.50
90%CONFIDENCE
2.5
tp
Rth(j-a)=15 o C/W
0
0
80
1 50
1 40
1 30
1 20
3.0
=tp/T
10
IF=IF(av)
1.25
Tj=100 O C
2.0
1.00
1.5
0.75
1.0
0.50
IRM
QRR
Tj=25 O C
0.5
0.0
1
4/5
0.25
dIF/dt(A/us)
20
10
1 00
0.00
0
Tj( o C)
25
50
75
100
125
150
BYW77P/PI-200
PACKAGE MECHANICAL DATA
DOP3I (isoluted)
DIMENSIONS
REF.
Millimeters
Min.
Max.
Inches
Min.
Max.
A
B
C
D
E
F
G
H
K
L
N
P
R
4.4
4.6
1.45
1.55
14.35 15.60
0.5
0.7
2.7
2.9
15.8
16.5
20.4
21.1
15.1
15.5
3.4
3.65
4.08
4.17
10.8
11.3
1.20
1.40
4.60 typ.
0.173 0.181
0.057 0.061
0.565 0.614
0.020 0.028
0.106 0.114
0.622 0.650
0.815 0.831
0.594 0.610
0.134 0.144
0.161 0.164
0.425 0.444
0.047 0.055
0.181 typ.
Cooling method : C
Marking : Type number
Weight : 4.52 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/5
BYW77P/PI-200
PACKAGE MECHANICAL DATA
SOD93
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.70
4.90 0.185
0.193
C 1.17
1.37 0.046
0.054
D
2.50
0.098
D1
1.27
0.050
E 0.50
0.78 0.020
0.031
F 1.10
1.30 0.043
0.051
F3
1.75
0.069
G 10.80
11.10 0.425
0.437
H 14.70
15.20 0.578
0.598
L
12.20
0.480
L2
16.20
0.638
L3
18.0
0.709
L5 3.95
4.15 0.156
0.163
L6
31.00
1.220
O 4.00
4.10 0.157
0.161
Cooling method : C
Marking : Type number
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
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use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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