BYW77P/PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOD93 (Plastic) isolated DOP3I (Plastic) BYW77P-200 BYW77PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter RMS forward current Average forward current δ = 0.5 A TOP3I Tc=100°C 25 tp=10ms sinusoidal 500 A - 40 to + 150 - 40 to + 150 °C °C Value Unit 200 V Storage and junction temperature range Parameter Repetitive peak reverse voltage Ed : 2C A 25 Tstg Tj October 1999 50 Tc=125°C Surge non repetitive forward current VRRM Unit SOD93 IFSM Symbol Value 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit SOD93 1.0 °C/W DOP3I 1.8 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 25 µA 2.5 mA V Tj = 125°C IF = 20 A 0.85 Tj = 125°C IF = 40 A 1.00 Tj = 25°C IF = 40 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 35 IF = 1A VR = 30V dIF/dt = -50A/µs 50 Unit ns tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V 2/5 BYW77P/PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 Fig.2 : Peak current versus form factor. =0.2 =0.1 =0.05 =0.5 T =1 400 IM P=20W =tp/T 300 tp 200 T P=30W 100 I F(av)(A) 5 10 15 =tp/T 20 P=40W tp 25 30 Fig.3 : Forward voltage drop versus forward current (maximum values). 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) K 1.8 1.6 I M(A) 500 Zth(j-c) (tp. ) K = Rth(j-c) Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 300 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) 300 IM(A) 1.0E-02 1.0E-01 tp 1. 0E+00 Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) 250 250 =tp/T tp(s) 0.1 IM(A) 200 200 150 Tc=25 oC 150 Tc=25 oC Tc=75 o C 100 100 IM 50 0 0.001 50 t t(s) =0.5 0.01 Tc=50 o C IM Tc=125 o C t(s) =0.5 0.1 1 0 0.001 Tc=100 o C t 0.01 0.1 1 3/5 BYW77P/PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) 30 versus ambient IF(av)(A) 30 Rth(j-a)=Rth(j-c) =0.5 ambient Rth(j-a)=Rth(j-c) =0.5 T 20 versus IF(av)(A) 25 25 T 20 15 15 =tp/T 10 5 Fig.8 : Average current temperature. (duty cycle : 0.5) (DOP3I) tp Rth(j-a)=15 o C/W 5 Tamb( o C) 0 0 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). 20 0 1 90 1 80 1 70 1 60 C(pF) F=1Mhz Tj=25 oC Tamb( o C) 20 40 60 80 100 120 140 160 Fig.10 : Recovery charges versus dIF/dt. QRR(nC) 70 90%CONFIDENCE IF=IF(av) Tj=100 OC 60 50 40 Tj=25 O C 30 20 11 0 1 00 1 10 VR(V) 10 1 00 2 00 Fig.11 : Peak reverse current versus dIF/dt. dIF/dt(A/us) 0 1 10 100 Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] IRM(A) 1.50 90%CONFIDENCE 2.5 tp Rth(j-a)=15 o C/W 0 0 80 1 50 1 40 1 30 1 20 3.0 =tp/T 10 IF=IF(av) 1.25 Tj=100 O C 2.0 1.00 1.5 0.75 1.0 0.50 IRM QRR Tj=25 O C 0.5 0.0 1 4/5 0.25 dIF/dt(A/us) 20 10 1 00 0.00 0 Tj( o C) 25 50 75 100 125 150 BYW77P/PI-200 PACKAGE MECHANICAL DATA DOP3I (isoluted) DIMENSIONS REF. Millimeters Min. Max. Inches Min. Max. A B C D E F G H K L N P R 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 3.4 3.65 4.08 4.17 10.8 11.3 1.20 1.40 4.60 typ. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.134 0.144 0.161 0.164 0.425 0.444 0.047 0.055 0.181 typ. Cooling method : C Marking : Type number Weight : 4.52 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/5 BYW77P/PI-200 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.70 4.90 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.50 0.098 D1 1.27 0.050 E 0.50 0.78 0.020 0.031 F 1.10 1.30 0.043 0.051 F3 1.75 0.069 G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.578 0.598 L 12.20 0.480 L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220 O 4.00 4.10 0.157 0.161 Cooling method : C Marking : Type number Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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