STMICROELECTRONICS BYW80

BYW80(F)-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION (ISOWATT220AC) :
Insulating voltage = 2000 V DC
Capacitance = 12 pF
A
A
K
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC, or ISOWATT220AC this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
TO-220AC
(Plastic)
isolated
ISOWATT220AC
(Plastic)
BYW80-200
BYW80F-200
ABSOLUTE MAXIMUM RATINGS
Symbol
IF(RMS)
IF(AV)
Parameter
RMS forward current
Average forward current
δ = 0.5
A
A
10
ISOWATT220AC
Tc=95°C
10
tp=10ms
sinusoidal
100
A
- 65 to + 150
- 65 to + 150
°C
°C
Value
Unit
200
V
Tstg
Tj
Storage and junction temperature range
Parameter
Repetitive peak reverse voltage
October 1999 - Ed: 2D
20
Tc=120°C
Surge non repetitive forward current
VRRM
Unit
TO-220AC
IFSM
Symbol
Value
1/6
BYW80(F)-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case
Value
Unit
TO-220AC
2.5
°C/W
ISOWATT220AC
4.7
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR *
Test Conditions
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 100°C
VF **
Max.
Unit
10
µA
1
mA
V
Tj = 125°C
IF = 7 A
0.85
Tj = 125°C
IF = 15 A
1.05
Tj = 25°C
IF = 15 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.027 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
Typ.
Max.
IF = 0.5A
IR = 1A
Irr = 0.25A
25
IF = 1A
VR = 30V
dIF/dt = -50A/µs
35
Unit
ns
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
15
ns
VFP
Tj = 25°C
IF = 1A
tr = 10 ns
2
V
2/6
BYW80(F)-200
Fig.1 : Average forward power dissipation versus
average forward current.
14
P F(av)(W)
Fig.2 : Peak current versus form factor.
200
=0.5
=0.2
=0.1
12
=1
IM(A)
T
175
=0.05
150
10
IM
P=10W
125
8
=tp/T
tp
100
6
T
P=5W
75
4
50
2
IF(av)(A)
0
0
1
2
3
4 5
6
7
=tp/T
tp
8 9 10 11 12 13 14
P=15W
25
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Fig.3 : Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
Tj= 125 oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IFM(A)
0.0
0.1
1
10
100
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AC)
1.0
K
Fig.5 : Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AC)
1
Zth(j-c) (tp. )
K =
Rth(j-c)
K
Zth(j-c) (tp. )
K =
Rth(j-c)
0.8
=0.5
0.5
=0.5
=0.2
0.6
= 0 .1
= 0 .2
0.4
T
0.2
T
Single pulse
Single pulse
= 0 .1
0.2
1.0E-03
=tp/T
tp(s)
0.1
1.0E-02
1.0E-01
tp
1. 0E+00
tp(s)
0
1.0E-03
1.0E-02
1.0E-01
=tp/T
1.0 E+00
tp
1. 0E+01
3/6
BYW80(F)-200
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TO-220AC)
IM(A)
100
90
80
70
60
50
40
30 IM
20
10
0
0.001
Fig.7 : Non repetitive surge peak forward current
versus overload duration.
(ISOWATT220AC)
IM(A)
80
70
60
50
Tc=25 o C
Tc=25 o C
40
Tc= 75 o C
30
Tc=120 o C
t
=0.5
0.1
Fig.8 : Average current
temperature.
(duty cycle : 0.5) (TO-220AC)
versus
IF(av)(A)
12
11
Rth(j-a)=Rth(j-c)
10
9
8
Rth(j-a)=15 o C/W
7
6
=0.5
5
T
4
3
2
=tp/T
tp
1
Tamb(o C)
0
0
20
40
60
80
100 120
1
ambient
t(s)
=0.5
0
0.001
0.01
0.1
1
Fig.9 : Average current versus
temperature.
(duty cycle : 0.5) (ISOWATT220AC)
140
160
12
11
10
9
8
7
6
5
4
3
2
1
0
0
ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15 o C/W
=0.5
T
=tp/T
20
Tamb(o C)
tp
40
60
80
100
120
140
160
Fig.11 : Recovery charges versus dIF/dt.
QRR(nC)
90% CONFIDENCE Tj=125 o C
VR(V)
4/6
10
IF(av)(A)
Fig.10 : Junction capacitance versus reverse
voltage applied (Typical values).
C(pF)
Tc= 95 o C
t
10
t(s)
0.01
Tc=50 oC
IM
20
dIF/dt(A/us)
IF=IF(av)
BYW80(F)-200
Fig.12 : Peak reverse current versus dIF/dt.
Fig.13 : Dynamic parameters versus junction
temperature.
O
I RM(A)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
90% CONFIDENCE
Tj=125 o C
IF=IF(av)
IRM
QRR
Tj( o C)
dIF/dt(A/us)
PACKAGE MECHANICAL DATA
ISOWATT220AC (JEDEC outline)
DIMENSIONS
A
H
B
REF.
Millimeters
Diam
Min.
L6
L7
L2
L3
F1
F
D
E
A
B
D
E
F
F1
G
H
L2
L3
L6
L7
Diam
Max.
4.40
4.60
2.50
2.70
2.40
2.75
0.40
0.70
0.75
1.00
1.15
1.70
4.95
5.20
10.00 10.40
16.00 typ.
28.60 30.60
15.90 16.40
9.00
9.30
3.00
3.20
Inches
Min.
Max.
0.173 0.181
0.098 0.106
0.094 0.108
0.016 0.028
0.030 0.039
0.045 0.067
0.195 0.205
0.394 0.409
0.63 typ.
1.125 1.205
0.626 0.646
0.354 0.366
0.118 0.126
G
Cooling method : C
Marking : Type number
Weight : 2 g
Recommended torque value : 0.55m.N
Maximum torque value : 0.70m.N
5/6
BYW80(F)-200
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
DIMENSIONS
REF.
Millimeters
Min.
H2
A
C
L5
L7
ØI
L6
L2
D
L9
F1
L4
M
F
E
G
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
4.95
5.15
10.00 10.40
16.40 typ.
13.00 14.00
2.65
2.95
15.25 15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
0.393 0.409
0.645 typ.
0.511 0.551
0.104 0.116
0.600 0.620
0.244 0.259
0.137 0.154
0.102 typ.
0.147 0.151
Cooling method : C
Marking : Type number
Weight : 1.86 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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