BYW80(F)-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A A K K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC, or ISOWATT220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. TO-220AC (Plastic) isolated ISOWATT220AC (Plastic) BYW80-200 BYW80F-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter RMS forward current Average forward current δ = 0.5 A A 10 ISOWATT220AC Tc=95°C 10 tp=10ms sinusoidal 100 A - 65 to + 150 - 65 to + 150 °C °C Value Unit 200 V Tstg Tj Storage and junction temperature range Parameter Repetitive peak reverse voltage October 1999 - Ed: 2D 20 Tc=120°C Surge non repetitive forward current VRRM Unit TO-220AC IFSM Symbol Value 1/6 BYW80(F)-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit TO-220AC 2.5 °C/W ISOWATT220AC 4.7 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 10 µA 1 mA V Tj = 125°C IF = 7 A 0.85 Tj = 125°C IF = 15 A 1.05 Tj = 25°C IF = 15 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 25 IF = 1A VR = 30V dIF/dt = -50A/µs 35 Unit ns tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj = 25°C IF = 1A tr = 10 ns 2 V 2/6 BYW80(F)-200 Fig.1 : Average forward power dissipation versus average forward current. 14 P F(av)(W) Fig.2 : Peak current versus form factor. 200 =0.5 =0.2 =0.1 12 =1 IM(A) T 175 =0.05 150 10 IM P=10W 125 8 =tp/T tp 100 6 T P=5W 75 4 50 2 IF(av)(A) 0 0 1 2 3 4 5 6 7 =tp/T tp 8 9 10 11 12 13 14 P=15W 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 1.8 1.6 Tj= 125 oC 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IFM(A) 0.0 0.1 1 10 100 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AC) 1.0 K Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AC) 1 Zth(j-c) (tp. ) K = Rth(j-c) K Zth(j-c) (tp. ) K = Rth(j-c) 0.8 =0.5 0.5 =0.5 =0.2 0.6 = 0 .1 = 0 .2 0.4 T 0.2 T Single pulse Single pulse = 0 .1 0.2 1.0E-03 =tp/T tp(s) 0.1 1.0E-02 1.0E-01 tp 1. 0E+00 tp(s) 0 1.0E-03 1.0E-02 1.0E-01 =tp/T 1.0 E+00 tp 1. 0E+01 3/6 BYW80(F)-200 Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO-220AC) IM(A) 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWATT220AC) IM(A) 80 70 60 50 Tc=25 o C Tc=25 o C 40 Tc= 75 o C 30 Tc=120 o C t =0.5 0.1 Fig.8 : Average current temperature. (duty cycle : 0.5) (TO-220AC) versus IF(av)(A) 12 11 Rth(j-a)=Rth(j-c) 10 9 8 Rth(j-a)=15 o C/W 7 6 =0.5 5 T 4 3 2 =tp/T tp 1 Tamb(o C) 0 0 20 40 60 80 100 120 1 ambient t(s) =0.5 0 0.001 0.01 0.1 1 Fig.9 : Average current versus temperature. (duty cycle : 0.5) (ISOWATT220AC) 140 160 12 11 10 9 8 7 6 5 4 3 2 1 0 0 ambient Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T =tp/T 20 Tamb(o C) tp 40 60 80 100 120 140 160 Fig.11 : Recovery charges versus dIF/dt. QRR(nC) 90% CONFIDENCE Tj=125 o C VR(V) 4/6 10 IF(av)(A) Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) Tc= 95 o C t 10 t(s) 0.01 Tc=50 oC IM 20 dIF/dt(A/us) IF=IF(av) BYW80(F)-200 Fig.12 : Peak reverse current versus dIF/dt. Fig.13 : Dynamic parameters versus junction temperature. O I RM(A) QRR;IRM[Tj]/QRR;IRM[Tj=125 C] 90% CONFIDENCE Tj=125 o C IF=IF(av) IRM QRR Tj( o C) dIF/dt(A/us) PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline) DIMENSIONS A H B REF. Millimeters Diam Min. L6 L7 L2 L3 F1 F D E A B D E F F1 G H L2 L3 L6 L7 Diam Max. 4.40 4.60 2.50 2.70 2.40 2.75 0.40 0.70 0.75 1.00 1.15 1.70 4.95 5.20 10.00 10.40 16.00 typ. 28.60 30.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.094 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126 G Cooling method : C Marking : Type number Weight : 2 g Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N 5/6 BYW80(F)-200 PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) DIMENSIONS REF. Millimeters Min. H2 A C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Cooling method : C Marking : Type number Weight : 1.86 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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