LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION ORDER CODE LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. BRANDING LET20030C PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Parameter Drain-Source Voltage Value Unit 65 V 65 V -0.5 to +15 V Drain Current 4 A Power Dissipation (@ Tc = 70 °C) 65 W Max. Operating Junction Temperature 200 °C -65 to +200 °C 2.0 °C/W Drain-Gate Voltage (RGS = 1 MΩ) Gate-Source Voltage Storage Temperature THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance January, 24 2003 1/5 LET20030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 26 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 26 V ID = TBD 5.0 V VDS(ON) VGS = 10 V ID = 1 A 65 V 2.5 TBD V GFS VDS = 10 V ID = 1 A TBD mho CISS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF COSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB VDD = 26 V IDQ = 200 mA GP VDD = 26 V IDQ = 200 mA ηD VDD = 26 V IMD3(1) VDD = 26 V Load mismatch 30 POUT = 30 W W 11 dB IDQ = 200 mA POUT = 30 W 52 % IDQ = 200 mA -31 IDQ = 200 mA VDD = 26 V ALL PHASE ANGLES POUT = 30 W PEP POUT = 30 W -28 10:1 dBc VSWR DYNAMIC (f = 1930 - 1990 MHz) POUT (2) VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD VDD = 26 V IDQ = TBD ηD (2) 25 POUT = 30 W 30 W 11 40 dB 45 % Pout(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 4.5 W ηD(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 17 % (1) f1 = 2000 MHz, f2 = 2000.1 MHz (2) 1 dB Compression point (3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/5 Class 2 M3 LET20030C TYPICAL PERFORMANCE Efficiency vs. Output Power Power Gain vs. Output Power 16 60 14 50 12 40 Nd (%) Gp (dB) 10 8 30 6 20 4 10 f = 2 GHz Vcc = 26 V Idq = 200 m A 2 0 f = 2 GHz Vcc = 26 V Idq = 200 m A 0 0 10 20 30 40 Pout (W ) 0 10 20 30 40 Pout (W ) IMD3 vs. Output Power 0 -10 IMD3 (dBc) -20 -30 -40 -50 -60 Vc c = 26 V Idq = 200 m A -70 0 5 10 15 20 25 30 35 40 Pout (W PEP) 3/5 LET20030C M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. MAX MIN. TYP. MAX A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Controlling dimension: Inches 4/5 TYP. Inch 1022142E LET20030C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5