SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING M177 DESCRIPTION The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz epoxy sealed ORDER CODE BRANDING SD2933 SD2933 PIN CONNECTION 1. Drain 4. Source 2. Source 5. Source 3. Gate ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C) Symbol V(BR)DSS VDGR V GS ID PDISS Tj TSTG Parameter Drain Source Volatage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Value 125 125 ±20 40 648 Unit V V V A W 200 0 C -65 to 150 0 C THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance* 0.27 0.15 0 C/W C/W 0 * Determined using a flat aluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent). Jun 2000 1/8 SD2933 ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol Parameter Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 200 mA IDSS VGS = 0 V VDS = 50 V 10 mA IGSS VGS = 20 V VDS = 0 V 10 µA V GS(Q) VDS = 10 V ID = 250 mA 5 V VDS(ON) VGS = 10 V ID = 10 A 3 V gFS VDS = 10 V ID = 10 A C ISS VGS = 0 V VDS = 50 V f = 1 MHz 1000 pF COSS VGS = 0 V VDS = 50 V f = 1 MHz 372 pF C RSS VGS = 0 V VDS = 50 V f = 1 MHz 29 pF 125 V 2 10 mho REF. 7170198B DYNAMIC Symbol Parameter Typ. Max. Unit 300 400 W POUT f = 30 MHz V DD = 50 V GPS f = 30 MHz V DD = 50 V POUT = 300 W IDQ = 250 mA 20 23.5 dB ηD f = 30 MHz V DD = 50 V POUT = 300 W IDQ = 250 mA 50 65 % f = 30 MHz V DD = 50 V All Phase Angles POUT = 300 W IDQ = 250 mA 3:1 Load Mismatch IDQ = 250 mA IMPEDANCE DATA 2/8 Min. Frequency ZIN (Ω) ZDL (Ω) 30 MHz 1.8 - j 0.2 2.8 + j 2.3 108 MHz 1.9 + j 0.2 1.6 + j 1.4 150 MHz 1.9 + j 0.3 1.5 + j 1.6 VSWR SD2933 TYPICAL PERFORMANCE Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 15 Id, DRAIN CURRENT (A) C, CAPACITANCE (pF) f= 1MHz Ciss 1000 Coss 100 Crss Vdd= 10V Tc=+80°C 10 Tc=+25°C 5 Tc=-20°C 0 10 0 10 20 30 40 1 50 1.5 Gate-Source Voltages vs. Case Temperature 2.5 3 3.5 4 Maximum Thermal Resistance vs. Case Temperature 0.33 1.15 1. 1 Id=12 A Id=10 A 1.05 Id= 7 A Id= 5 A Id=15 A 1 0.95 Id=.1 A Id= 4 A 0.9 Id= 3 A Vdd= 10 V Id= 2 A 0.85 Id=1 A Id=.25A Rth(j-c), THERMAL RESISTANCE (°C/W) Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) 2 Vgs, GATE-SOURCE VOLTAGE (V) Vds, DRAIN-SOURCE VOLTAGE (V) 0.32 0.31 0.3 0.29 0.28 0.27 0.26 0.8 -25 0 25 50 Tc, CASE TEMPERATURE (ºC) 75 100 25 35 45 55 65 75 85 Tc, CASE TEMPERATURE (°C) 3/8 SD2933 TYPICAL PERFORMANCE Output Power vs. Input Power Output Power vs. Input Power 400 500 Tc = +250C Pout,OUTPUTPOWER(W) Pout, OUTPUT POWER (W) Vdd = 50V 300 Vdd = 40V 200 100 F= 30 MHz Idq= 250 mA Tc = +800C 300 200 F=30MHz Vdd=50V Idq=250mA 100 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 2.7 0.5 1 Power Gain vs. Output Power 2 2.5 3 Drain Efficiency vs. Output Power 80 Nd, DRAIN EFFICIENCY (%) 26 24 Gp, POWER GAIN (dB) 1.5 Pin, INPUT POWER (W) Pin, INPUT POWER ( W ) 22 20 F= 30 MHz Vdd= 50 V Idq= 250 mA 18 70 60 50 40 F= 30 MHz Vdd= 50 V Idq= 250 mA 30 20 16 0 100 200 300 0 400 100 200 300 400 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Supply Voltage Output Power vs. Gate Voltage 450 500 400 F= 30 MHz Idq= 250 mA Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Tc= -200C 400 Pin= 2.6 W 350 Pin= 1.3 W 300 250 Pin= 0.65 W 200 F= 30 MHz Vdd= 50 V 400 Tc= +25°C Tc= -20°C 300 Tc= +80°C 200 100 150 0 100 24 26 28 30 32 34 36 38 40 42 Vdd, SUPPLY VOLTAGE (V) 4/8 44 46 48 50 -3 -2 -1 0 1 Vgs, GATE-SOURCE VOLTAGE (V) 2 3 SD2933 30 MHZ TEST CIRCUIT SCHEMATIC REF. 1008706A 30 MHz TEST CIRCUIT COMPONENT PART LIST 5/8 SD2933 30 MHZ TEST CIRCUIT PHOTOMASTER REF. 1008706A 30 MHZ PRODUCTION TEST FIXTURE 6/8 SD2933 M177 (.550 DIA. 4/L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. TYP. Inch MAX MIN. TYP. MAX A 5.72 5.97 0.225 0.235 B 6.73 6.96 0.265 0.275 C 21.84 22.10 0.860 0.870 D 28.70 28.96 1.130 1.140 E 13.84 14.10 0.545 0.555 F 0.08 0.18 0.003 0.007 G 2.49 2.74 0.098 0.108 H 3.81 4.32 0.150 0.170 I 7.11 0.280 J 27.43 28.45 1.080 1.120 K 15.88 16.13 0.625 0.635 Controlling Dimension: Inches 1011012D 7/8 SD2933 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics, 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8