STMICROELECTRONICS LET21004

LET21004
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
PowerFLAT™(5x5)
DESCRIPTION
The LET21004 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21004 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD
plastic
package,
PowerFLAT™.
LET21004’s superior linearity performance makes
it an
ideal
solution
for
base station
applications.
ORDER CODE
LET21004
BRANDING
21004
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
-0.5 to +15
V
1
A
TBD
W
ID
PDISS
Tj
TSTG
Drain Current
Power Dissipation (@ Tc = 70 °C)
Max. Operating Junction Temperature
Storage Temperature
150
°C
-65 to +150
°C
TBD
°C/W
THERMAL DATA (TCASE = 70 °C)
Rth(j-c)
April, 15 2003
Junction -Case Thermal Resistance
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LET21004
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC
Symbol
Test Conditions
V(BR)DSS
VGS = 0 V
IDS = 1 mA
IDSS
VGS = 0 V
VDS = 26 V
IGSS
VGS = 5 V
VGS(Q)
VDS = 28 V
ID = TBD
VDS(ON)
VGS = 10 V
ID = 0.3 A
Min.
Typ.
Max.
65
Unit
V
VDS = 0 V
2.5
TBD
1
µA
1
µA
5.0
V
0.3
V
GFS
VDS = 10 V
ID = 0.3 A
TBD
mho
CISS
VGS = 0 V
VDS = 26 V
f = 1 MHz
TBD
pF
COSS
VGS = 0 V
VDS = 26 V
f = 1 MHz
TBD
pF
CRSS
VGS = 0 V
VDS = 26 V
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (f = 2170 MHz)
Pout(1)
ηD
(1)
Load
mismatch
VDD = 26 V
IDQ = TBD
4
5
W
VDD = 26 V
IDQ = TBD
45
50
%
VDD = 26 V IDQ = TBD
ALL PHASE ANGLES
POUT = 4 W
10:1
VSWR
DYNAMIC (f = 2110 - 2170 MHz)
Pout(1)
VDD = 26 V
IDQ = TBD
3
4
W
ηD(1)
VDD = 26 V
IDQ = TBD
40
45
%
GP
VDD = 26 V
IDQ = TBD
11
13
dB
1
W
25
%
POUT(W-CDMA) ACPR: -45dBc
ηD(W-CDMA)
ACPR: -45dBc
(1) 1 dB Compression point
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POUT = 4 W
LET21004
PowerFLAT™ MECHANICAL DATA
DIM.
mm
MIN.
TYP.
Inch
MAX
MIN.
TYP.
MAX
A
0.90
1.00
0.035
0.039
A1
A3
0.02
0.24
0.05
0.001
0.009
0.002
AA
0.15
0.25
0.35
0.006
0.01
0.014
b
c
0.43
0.64
0.51
0.71
0.58
0.79
0.017
0.025
0.020
0.028
0.023
0.031
D
5.00
0.197
d
0.30
0.011
E
E2
5.00
2.49
2.57
0.197
2.64
0.098
0.101
e
f
1.27
3.37
g
0.74
0.03
h
0.21
0.008
0.104
0.050
0.132
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LET21004
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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