LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING CASE 465E–03, STYLE 1 epoxy sealed • ESD PROTECTION ORDER CODE LET21030C DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. BRANDING LET21030C PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID PDISS Tj TSTG Drain Current 4 A Power Dissipation (@ Tc = 70 °C) 65 W Max. Operating Junction Temperature 200 °C -65 to +200 °C 2 °C/W Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V ID = 20 µA IDSS VGS = 0 V VDS = 26 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = TBD 4.5 V VDS(ON) VGS = 10 V ID = 1 A 0.4 V 65 V 2 0.29 GFS VDS = 10 V ID = 1 A 2 mho CISS* VGS = 0 V VDD = 26 V f = 1 MHz TBD pF COSS VGS = 0 V VDD = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF * Including input matching capacitor in package ? Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2170 MHz) POUT(1) ηD (1) Load mismatch VDD = 26 V IDQ = TBD 30 35 W VDD = 26 V IDQ = TBD 45 50 % VDD = 26 V POUT = 30 W ALL PHASE ANGLES 10:1 VSWR DYNAMIC (f = 2110 - 2170 MHz) POUT(1) ηD (1) GP VDD = 26 V IDQ = TBD 25 30 W VDD = 26 V IDQ = TBD 40 45 % VDD = 26 V IDQ = TBD mA POUT = 30 W 11 dB POUT(W-CDMA)(2) ACPR -45 dBc 5 W ηD(W-CDMA)(2) ACPR -45 dBc 20 % (1) 1 dB Compression point (2) +/- 5 MHz offset; 3.84 MHz Bandwitdh ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/4 Class 2 M3 LET21030C 465E-03 MECHANICAL DATA 3/4 LET21030C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4