M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY . .. .. . .. LOW ON RESISTANCE – 75 Ω TYP. AT VDD = 12 V ”BUILT-IN” CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY ± VDD/2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS ∆RON = 18 Ω TYP. AT VDD – VSS = 12 V. HIGH LINEARITY : – 0.5 % DISTORTION (typ.) AT f = 1 KHz, VIN = 5 V PEAK TO PEAK, VDD VSS = 10 V, RL = 10 KΩ STANDARD COS/MOS NOISE IMMUNITY 100 % TESTED FOR QUIESCENT CURRENT Therefore, all switches must be turned off by putting the strobe high and data-in-low, and then addressing all switches in succession. EY (Plastic Package) F (Ceramic Package) ORDER CODES : M22100 B1 M22100 F1 DESCRIPTION The M22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line-to-16-line decoder and 16 latch circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line address. The selected transmission gate can be turned on or off by applying a logical one or zero, respectively, to the data input and strobing the strobe input to a logical one. Any number of the transmission gates can be ON simultaneously. PIN CONNECTIONS When the required operating power is applied to the 22100, the states of the 16 switches are indeterminate. FUNCTIONAL DIAGRAM TRUTH TABLE Address September 1988 Address Select A B C D 0 0 0 0 1 0 0 0 0 1 0 1 1 0 1 Select A B C D X1 Y1 0 0 0 1 X1 Y3 X2 Y1 1 0 0 1 X2 Y3 0 X3 Y1 0 1 0 1 X3 Y3 0 0 X4 Y1 1 1 0 1 X4 Y3 0 1 0 X1 Y2 0 0 1 1 X1 Y4 0 1 0 X2 Y2 1 0 1 1 X2 Y4 0 1 1 0 X3 Y2 0 1 1 1 X3 Y4 1 1 1 0 X4 Y2 1 1 1 1 X4 Y4 1/13 M22100 ABSOLUTE MAXIMUM RATING Symbol Value Unit Vi Supply Voltage: Ceramic Types Plastic Types Input Voltage -0.5 to +20 -0.5 to +18 -0.5 to VDD + 0.5 V V V II DC Input Current (any one input) ± 10 mA Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range 200 mW 100 mW VDD * Ptot Parameter Top Operating Temperature: Ceramic Types Plastic Types -55 to +125 -40 to +85 o Tstg Storage Temperature -65 to +150 o o C C C Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top Parameter Supply Voltage: Ceramic Types Plastic Types Input Voltage Operating Temperature: Ceramic Types Plastic Types LOGIC DIAGRAM 2/13 Value 3 to 18 3 to 15 0 to VDD -55 to +125 -40 to +85 Unit V V V o o C C M22100 STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditios Symbol Parameter VI (V) Value VDD (V) TLOW * Min. Max. 25 oC Min. Typ. Max. THIGH * Min. Max. Unit CROSSPOINT IL RON Quiescent Supply Current On Resistance F1 II CI 15 0.04 20 600 20 0.08 100 3000 0.04 20 150 0.04 0.04 40 80 300 600 5 450 225 1250 1625 F1 10 12 135 100 85 75 180 135 230 175 15 70 65 95 125 5 10 1000 145 225 85 1250 180 1440 205 12 110 75 135 155 15 5 75 65 35 95 110 F1 Any Switch VIS = 0 to VDD All Switch OFF B1 0/18 0/15 OFF Switch IL < 0.2 µA Input High Voltage Input Current 150 300 5 CONTROL V IL Input Low Voltage VIH 5 10 10 15 Resistance ∆RON (Between any two channels) OFF Channel Leakage Current 0.04 0.04 B1 B1 ∆ON 5 10 ON Switch see RON Characteristics F1 B1 Input Capacitance Any Control Input Any Input 0/18 0/15 10 20 12 15 18 15 15 ±0.3 5 10 ±10 -3 ±1 ±0.3 ±1 1.5 1.5 1.5 3 3 3 15 5 3.5 3.5 3.5 10 7 7 7 15 18 11 15 4 4 11 ±0.1 ±0.3 Ω Ω ±10-3 ±0.1• ±0.1 18 µA µA V 4 V 11 ±10-5 ±0.1• ±10 5 -5 ±0.3 7.5 ±1 ±1 µA pF • Determined by minimum feasible leakage measurement for automatic testing * TLOW = -55 oC for HCC device: -40 oC for HCF device. * THIGH = +125 oC for HCC device: +85 oC for HCF device. The Noise Margin for both ”1” and ”0” level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. with VDD = 15 V 3/13 M22100 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 o C, C L = 50 pF, all input rise and fall times= 20 ns) Symbol Parameter CROSSPOINT Propagation Delay Time tPHL tPLH Address or Strobe Inputs to Output Frequency Response (Any Switch ON) Sine Wave Distortion Feedthrough (All Switches OFF) Frequency for Signal Crosstalk Attenuation of 40 dB Frequency for Signal Crosstalk Attenuation of 110 dB Capacitance Xn to Ground Yn to Ground Feedthrough CONTROLS tPHZ Propagation Delay Time Strobe to Output (Switch Turn-ON to High Level) Test Conditions fi RL VIS • (KHz) (KW) (V) Value VDD (V) 5 10 15 1 1 5 Sine Wave Input VOS = − 3 dB 20 Log VIS 10 1 1.6 1 5 1 5 Sine Wave Input 1 10 Min. Unit Typ. Max. 5 10 15 10 30 15 10 40 60 30 20 10 10 0.5 80 % dB 10 1.5 MHz 10 0.1 KHz ns MHz Sine Wave Input 1 10 Sine Wave Input C tPZH tPZH tPHZ tPZL tPHZ tsetup Propagation Delay Time Data-In to Output (Switch Turn-ON to High Level) Propagation Delay Time Address to Output (Switch RL = 1 KΩ Turn-ON to High Level) CL = 50 pF Propagation Delay Time tr, tf = 20 ns Strobe to Output (Switch Turn-OFF) See Figure 1 See Figure 2 See Figure 3 See Figure 1 Propagation Delay Time Data-In to Output (Switch Turn-ON to Low Level) See Figure 2 Propagation Delay Time Address to Output (Switch Turn-OFF) See Figure 3 Setup Time Data-In to Strobe, Address • Peak to peak voltage symmetrical about VDD/2 4/13 5-15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 18 30 0.4 500 230 145 500 220 135 480 225 150 450 200 165 500 220 135 425 190 145 200 80 50 pF 1000 460 290 1000 440 270 960 450 300 900 400 330 1000 440 270 850 380 290 400 160 100 ns ns ns ns ns ns ns M22100 DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Symbol CONTROLS (continued) Hold Time Data-In to thold Strobe, Address fφ tW Test Conditions RL VIS • fi (KHz) (KW) (V) Parameter Switching Frequency VDD (V) 5 10 15 5 10 15 5 10 15 RL = 1 KΩ CL = 50 pF tr, tf = 20 ns Strobe Pulse Width Control Crosstalk Data-In, Address, or Storbe to Output Value 10 10 10 Min. Typ. 0.6 1.6 2.5 180 110 35 1.2 3.2 5 300 120 90 75 Max. Unit ns MHz 600 240 180 ns mV (peak) • Peak to peak volatge symmetrical about VDD/2 Typical ON Resistance vs. Input Signal Voltage at VDD = – VSS = 2.5 V. Typical ON Resistance vs. Input Signal Voltage at VDD = – VSS = 5 V. 5/13 M22100 Typical ON Resistance vs. Input Signal Voltage at VDD = – VSS = 7.5 V. Typical ON Resistance vs.. Input Signal Voltage at Tamb = 25 °C. Typical Swich ON Transfert Characteristics (1 of 16 switches). Typical Swich ON Frequency Response Characteristics. Typical Crosstalk Between switches vs. Signal Frequency. Typical Dynamic Power Dissipation vs. Switching Frequency.. 6/13 M22100 TEST CIRCUITS Quiescent Current. Input Current. Off Switch Input or Output Leakage Current. Dynamic Power Dissipation. Croostalk Between Switch Circuits in the Same Package. 7/13 M22100 Propagation Delay Time and Waveforms (signal input to signal output, switch ON). Waveforms for Crosstalk (control input to signal output). Figure 1 : Propagation Delay Time and Waveforms (strobe to signal output, switch Turn-ON or TurnOFF). 8/13 M22100 Figure 2 : Propagation Delay Time and Waveforms (data-in to signal output, switch Turn-ON to high or low level). Figure 3 : Propagation Delay Time and Waveforms (address to signal output switch Turn-ON or TurnOFF). 9/13 M22100 Plastic DIP16 (0.25) MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.77 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L Z 3.3 0.130 1.27 0.050 P001C 10/13 M22100 Ceramic DIP16/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7 0.276 D E 3.3 0.130 0.38 e3 0.015 17.78 0.700 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053D 11/13 M22100 PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 12/13 M22100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 13/13