1N5282 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 80 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A -65 to +200 °C 175 °C TSTG TJ Storage Temperature Range Operating Junction Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Parameter Value Units Power Dissipation 500 mV Thermal Resistance, Junction to Ambient 300 °C/W © 2009 Fairchild Semiconductor Corporation 1N5282 Rev. B0 www.fairchildsemi.com 1 1N5282 — Small Signal Diode November 2009 Symbol TA=25°C unless otherwise noted Parameter Test Conditions VR Breakdown Voltage IR = 5 μA VF Forward Voltage IF = 0.1 mA IF = 1.0 mA IF = 10 mA IF = 100 mA IF = 300 mA IF = 500 mA IR Reverse Current CT Min Max 80 0.45 0.55 0.67 0.80 0.92 1.05 Units V 0.49 0.60 0.725 0.90 1.1 1.3 V V V V V V VR = 55 V VR = 55 V, TA = 150 °C 100 100 nA μA Total Capacitance VR = 0, f = 1.0 MHz 2.5 pF trr1 Reverse Recovery Time IF = IR = 10 mA, RL = 100Ω 4 ns trr2 Reverse Recovery Time 4 ns Irr = 1.0 mA IF = IR = 200 mA, RL = 100Ω Irr = 20mA © 2009 Fairchild Semiconductor Corporation 1N5282 Rev. B0 www.fairchildsemi.com 2 1N5282 — Small Signal Diode Electrical Characteristics 1N5282 — Small Signal Diode Physical Dimensions DO-35 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation 1N5282 Rev. 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