STMICROELECTRONICS M58WR032FB60ZB6F

M58WR032FT
M58WR032FB
32 Mbit (2Mb x16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE
– VDD = 1.7V to 2V for Program, Erase and
Read
– VDDQ = 1.7V to 2.24V for I/O Buffers
– VPP = 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 60ns, 70ns, 80ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
November 2004
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
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ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Codes:
M58WR032FT (Top): 8814h
M58WR032FB (Bottom): 8815h
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
1/86
M58WR032FT, M58WR032FB
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2.
Table 1.
Figure 3.
Table 2.
Figure 4.
Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
VFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Latch Enable (L). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Clock (K).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Wait (WAIT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VDD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VPP Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VSSQ Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Address Latch.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
COMMAND INTERFACE - STANDARD COMMANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Array Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/86
M58WR032FT, M58WR032FB
Read CFI Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Clear Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Set Configuration Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block Lock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block Unlock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block Lock-Down Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Standard Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 6. Electronic Signature Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5. Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
COMMAND INTERFACE - FACTORY PROGRAM COMMANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Bank Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Quadruple Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Enhanced Factory Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Program Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Quadruple Enhanced Factory Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Load Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Program and Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 7. Factory Program Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program/Erase Controller Status Bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Erase Suspend Status Bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Erase Status Bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program Status Bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
VPP Status Bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Program Suspend Status Bit (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Block Protection Status Bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Bank Write/Multiple Word Program Status Bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 8. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
CONFIGURATION REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Read Select Bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
X-Latency Bits (CR13-CR11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Wait Polarity Bit (CR10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3/86
M58WR032FT, M58WR032FB
Data Output Configuration Bit (CR9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Wait Configuration Bit (CR8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Burst Type Bit (CR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Valid Clock Edge Bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Wrap Burst Bit (CR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Burst length Bits (CR2-CR0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 9. Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 10. Burst Type Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 6. X-Latency and Data Output Configuration Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 7. Wait Configuration Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Asynchronous Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Synchronous Burst Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Synchronous Burst Read Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Single Synchronous Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 11. Dual Operations Allowed In Other Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 12. Dual Operations Allowed In Same Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Unlocked State. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Lock-Down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 13. Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 14. Program/Erase Times and Endurance Cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 15. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 16. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 8. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 9. AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 17. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 18. DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 19. DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 10.Asynchronous Random Access Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 11.Asynchronous Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 20. Asynchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
4/86
M58WR032FT, M58WR032FB
Figure 12.Synchronous Burst Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 13.Single Synchronous Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 14.Synchronous Burst Read Suspend AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 15.Clock input AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 21. Synchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 16.Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 22. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 17.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 23. Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 18.Reset and Power-up AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 24. Reset and Power-up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 19.VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Bottom View Package Outline . . . 54
Table 25. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Package Mechanical Data . . . . . . 54
Figure 20.VFBGA56 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 55
Figure 21.VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through package) . . . . . 56
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 26. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 27. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
APPENDIX A.BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 28. Top Boot Block Addresses, M58WR032FT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 29. Bottom Boot Block Addresses, M58WR032FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
APPENDIX B.COMMON FLASH INTERFACE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 30. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 31. CFI Query Identification String. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 32. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 33. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 34. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 35. Protection Register Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 36. Burst Read Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 37. Bank and Erase Block Region Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 38. Bank and Erase Block Region 1 Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 39. Bank and Erase Block Region 2 Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
APPENDIX C.FLOWCHARTS AND PSEUDO CODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 22.Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 23.Double Word Program Flowchart and Pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 24.Quadruple Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 25.Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . 72
Figure 26.Block Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Figure 27.Erase Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . 74
5/86
M58WR032FT, M58WR032FB
Figure 28.Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Figure 29.Protection Register Program Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . 76
Figure 30.Enhanced Factory Program Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Enhanced Factory Program Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 31.Quadruple Enhanced Factory Program Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Quadruple Enhanced Factory Program Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
APPENDIX D.COMMAND INTERFACE STATE TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 40. Command Interface States - Modify Table, Next State . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 41. Command Interface States - Modify Table, Next Output . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 42. Command Interface States - Lock Table, Next State . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 43. Command Interface States - Lock Table, Next Output . . . . . . . . . . . . . . . . . . . . . . . . . . 84
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 44. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6/86
M58WR032FT, M58WR032FB
SUMMARY DESCRIPTION
The M58WR032FT/B is a 32 Mbit (2 Mbit x16)
non-volatile Flash memory that may be erased
electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V
VDD supply for the circuitry and a 1.7V to 2.24V
VDDQ supply for the Input/Output pins. An optional
12V VPP power supply is provided to speed up
customer programming.
The VPP pin can also be used as a control pin to
provide absolute protection against program or
erase.
The device features an asymmetrical block architecture. M58WR032FT/B has an array of 71
blocks, and is divided into 4 Mbit banks. There are
7 banks each containing 8 main blocks of 32
KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 main blocks of
32 KWords. The Multiple Bank Architecture allows
Dual Operations, while programming or erasing in
one bank, Read operations are possible in other
banks. Only one bank at a time is allowed to be in
Program or Erase mode. It is possible to perform
burst reads that cross bank boundaries. The bank
architecture is summarized in Table 2., and the
memory maps are shown in Figure 4. The Parameter Blocks are located at the top of the memory
address space for the M58WR032FT and at the
bottom for the M58WR032FB.
Each block can be erased separately. Erase can
be suspended, in order to perform program in any
other block, and then resumed. Program can be
suspended to read data in any other block and
then resumed. Each block can be programmed
and erased over 100,000 cycles using the supply
voltage VDD. There are two Enhanced Factory
programming commands available to speed up
programming.
Program and Erase commands are written to the
Command Interface of the memory. An internal
Program/Erase Controller takes care of the timings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified in the
Status Register. The command set required to
control the memory is consistent with JEDEC standards.
The device supports synchronous burst read and
asynchronous read from all blocks of the memory
array; at power-up the device is configured for
asynchronous read. In synchronous burst mode,
data is output on each clock cycle at frequencies
of up to 66MHz. The synchronous burst read operation can be suspended and resumed.
The device features an Automatic Standby mode.
When the bus is inactive during Asynchronous
Read operations, the device automatically switches to the Automatic Standby mode. In this condition the power consumption is reduced to the
standby value IDD4 and the outputs are still driven.
The M58WR032FT/B features an instant, individual block locking scheme that allows any block to be
locked or unlocked with no latency, enabling instant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any accidental programming or erasure. There is an additional
hardware protection against program and erase.
When VPP ≤ VPPLK all blocks are protected against
program or erase. All blocks are locked at PowerUp.
The device includes a Protection Register to increase the protection of a system’s design. The
Protection Register is divided into two segments:
a 64 bit segment containing a unique device number written by ST, and a 128 bit segment OneTime-Programmable (OTP) by the user. The user
programmable segment can be permanently protected. Figure 5. shows the Protection Register
Memory Map.
The memory is offered in a VFBGA56, 7.7 x 9mm,
8x7 active ball array, 0.75 mm pitch package.
In addition to the standard version, the package is
also available in Lead-free version, in compliance
with JEDEC Std J-STD-020B, the ST ECOPACK
7191395 Specification, and the RoHS (Restriction
of Hazardous Substances) directive. All packages
are compliant with Lead-free soldering processes.
The memory is supplied with all the bits erased
(set to ’1’).
7/86
M58WR032FT, M58WR032FB
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ15
Data Input/Outputs, Command
Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
WP
Write Protect
K
Clock
RP
L
Latch Enable
WP
WAIT
Wait
L
VDD
Supply Voltage
K
VDDQ
Supply Voltage for Input/Output
Buffers
VPP
Optional Supply Voltage for
Fast Program & Erase
VSS
Ground
VSSQ
Ground Input/Output Supply
NC
Not Connected Internally
VDD VDDQ VPP
21
16
A0-A20
DQ0-DQ15
W
E
G
WAIT
M58WR032FT
M58WR032FB
VSS
VSSQ
AI09300
8/86
M58WR032FT, M58WR032FB
Figure 3. VFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
A
A11
A8
VSS
VDD
VPP
A18
A6
A4
B
A12
A9
A20
K
RP
A17
A5
A3
C
A13
A10
NC
L
W
A19
A7
A2
D
A15
A14
WAIT
A16
DQ12
WP
NC
A1
E
VDDQ
DQ15
DQ6
DQ4
DQ2
DQ1
E
A0
F
VSS
DQ14
DQ13
DQ11
DQ10
DQ9
DQ0
G
G
DQ7
VSSQ
DQ5
VDD
DQ3
VDDQ
DQ8
VSSQ
AI09301
Table 2. Bank Architecture
Parameter Bank
4 Mbits
8 blocks of 4 KWords
7 blocks of 32 KWords
Bank 1
4 Mbits
-
8 blocks of 32 KWords
Bank 2
4 Mbits
-
8 blocks of 32 KWords
Bank 3
4 Mbits
-
8 blocks of 32 KWords
----
Main Blocks
----
Parameter Blocks
----
Bank Size
----
Number
Bank 6
4 Mbits
-
8 blocks of 32 KWords
Bank 7
4 Mbits
-
8 blocks of 32 KWords
9/86
M58WR032FT, M58WR032FB
Figure 4. Memory Map
M58WR032FB - Bottom Boot Block
Address lines A20-A0
M58WR032FT - Top Boot Block
Address lines A20-A0
000000h
007FFFh
32 KWord
038000h
03FFFFh
32 KWord
Bank 7
100000h
107FFFh
8 Main
Blocks
1B8000h
1BFFFFh
1C0000h
1C7FFFh
Parameter
Bank
1F0000h
1F7FFFh
1F8000h
1F8FFFh
1FF000h
1FFFFFh
078000h
07FFFFh
080000h
087FFFh
0B8000h
0BFFFFh
0C0000h
0C7FFFh
32 KWord
8 Main
Blocks
8 Parameter
Blocks
4KWord
32 KWord
7 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 2
32 KWord
Bank 1
4 KWord
Bank 1
32 KWord
8 Main
Blocks
007000h
007FFFh
008000h
00FFFFh
038000h
03FFFFh
040000h
047FFFh
32 KWord
Bank 2
178000h
17FFFFh
180000h
187FFFh
Parameter
Bank
32 KWord
Bank 3
138000h
13FFFFh
140000h
147FFFh
000000h
000FFFh
8 Main
Blocks
32 KWord
32 KWord
8 Main
Blocks
Bank 3
32 KWord
0F8000h
0FFFFFh
32 KWord
1C0000h
1C7FFFh
32 KWord
1F8000h
1FFFFFh
32 KWord
32 KWord
7 Main
Blocks
32 KWord
4 KWord
8 Parameter
Blocks
4 KWord
8 Main
Blocks
Bank 7
AI09302
10/86
M58WR032FT, M58WR032FB
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram and Table 1., Signal
Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Bus Write
operation.
Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is
at VILand Reset is at VIH the device is in active
mode. When Chip Enable is at VIH the memory is
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable or Write Enable
whichever occurs first.
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
each block. When Write Protect is at VIL, the LockDown is enabled and the protection status of the
Locked-Down blocks cannot be changed. When
Write Protect is at VIH, the Lock-Down is disabled
and the Locked-Down blocks can be locked or unlocked. (refer to Table 13., Lock Status).
Reset (RP). The Reset input provides a hardware reset of the memory. When Reset is at VIL,
the memory is in reset mode: the outputs are high
impedance and the current consumption is reduced to the Reset Supply Current IDD2. Refer to
Table 18., DC Characteristics - Currents, for the
value of IDD2. After Reset all blocks are in the
Locked state and the Configuration Register is reset. When Reset is at VIH, the device is in normal
operation. Exiting reset mode the device enters
asynchronous read mode, but a negative transition of Chip Enable or Latch Enable is required to
ensure valid data outputs.
The Reset pin can be interfaced with 3V logic without any additional circuitry. It can be tied to VRPH
(refer to Table 19., DC Characteristics - Voltages).
Latch Enable (L). Latch Enable latches the address bits on its rising edge. The address
latch is transparent when Latch Enable is at
V IL and it is inhibited when Latch Enable is at
V IH . Latch Enable can be kept Low (also at
board level) when the Latch Enable function
is not required or supported.
Clock (K). The clock input synchronizes the
memory to the microcontroller during synchronous
read operations; the address is latched on a Clock
edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is
don't care during asynchronous read and in write
operations.
Wait (WAIT). Wait is an output signal used during
synchronous read to indicate whether the data on
the output bus are valid. This output is high impedance when Chip Enable is at VIH or Reset is at VIL.
It can be configured to be active during the wait cycle or one clock cycle in advance. The WAIT signal
is not gated by Output Enable.
VDD Supply Voltage . VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
VPP Program Supply Voltage. VPP is a power
supply pin. The Supply Voltage VDD and the Program Supply Voltage VPP can be applied in any order. The pin can also be used as a control input.
The two functions are selected by the voltage
range applied to the pin. If VPP is kept in a low voltage range (0V to VDDQ) VPP is seen as a control
input. In this case a voltage lower than VPPLK
gives an absolute protection against program or
erase, while VPP > VPP1 enables these functions
(see Tables 18 and 19, DC Characteristics for the
relevant values). VPP is only sampled at the beginning of a program or erase; a change in its value
after the operation has started does not have any
effect and program or erase operations continue.
If VPP is in the range of VPPH it acts as a power
supply pin. In this condition VPP must be stable until the Program/Erase algorithm is completed.
VSS Ground. VSS ground is the reference for the
core supply. It must be connected to the system
ground.
VSSQ Ground. VSSQ ground is the reference for
the input/output circuitry driven by VDDQ. VSSQ
must be connected to VSS.
Note: Each device in a system should have
VDD, VDDQ and VPP decoupled with a 0.1µF ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors
11/86
M58WR032FT, M58WR032FB
should be as close as possible to the package). See Figure 9., AC Measurement Load Circuit. The PCB track widths should be sufficient
to carry the required VPP program and erase
currents.
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Address Latch, Output Disable, Standby and Reset.
See Table 3., Bus Operations, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect Bus Write operations.
Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the
Common Flash Interface. Both Chip Enable and
Output Enable must be at VIL in order to perform a
read operation. The Chip Enable input should be
used to enable the device. Output Enable should
be used to gate data onto the output. The data
read depends on the previous command written to
the memory (see COMMAND INTERFACE section). See Figures 10, 11, 12 and 13 Read AC
Waveforms, and Tables 20 and 21 Read AC Characteristics, for details of when the output becomes
valid.
Bus Write. Bus Write operations write Commands to the memory or latch Input Data to be
programmed. A bus write operation is initiated
when Chip Enable and Write Enable are at VIL with
Output Enable at VIH. Commands, Input Data and
Addresses are latched on the rising edge of Write
Enable or Chip Enable, whichever occurs first. The
addresses can also be latched prior to the write
operation by toggling Latch Enable. In this case
the Latch Enable should be tied to VIH during the
bus write operation.
See Figures 16 and 17, Write AC Waveforms, and
Tables 22 and 23, Write AC Characteristics, for
details of the timing requirements.
Address Latch. Address latch operations input
valid addresses. Both Chip enable and Latch Enable must be at VIL during address latch operations. The addresses are latched on the rising
edge of Latch Enable.
Output Disable. The outputs are high impedance when the Output Enable is at VIH.
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by
when Chip Enable and Reset are at VIH. The power consumption is reduced to the stand-by level
and the outputs are set to high impedance, independently from the Output Enable or Write Enable
inputs. If Chip Enable switches to VIH during a program or erase operation, the device enters Standby mode when finished.
Reset. During Reset mode the memory is deselected and the outputs are high impedance. The
memory is in Reset mode when Reset is at VIL.
The power consumption is reduced to the Standby
level, independently from the Chip Enable, Output
Enable or Write Enable inputs. If Reset is pulled to
VSS during a Program or Erase, this operation is
aborted and the memory content is no longer valid.
Table 3. Bus Operations
Operation
WAIT(4)
E
G
W
L
RP
Bus Read
VIL
VIL
VIH
VIL(2)
VIH
Data Output
Bus Write
VIL
VIH
VIL
VIL(2)
VIH
Data Input
Address Latch
VIL
X
VIH
VIL
VIH
Data Output or Hi-Z (3)
Output Disable
VIL
VIH
VIH
X
VIH
Hi-Z
Standby
VIH
X
X
X
VIH
Hi-Z
Hi-Z
X
X
X
X
VIL
Hi-Z
Hi-Z
Reset
Note: 1.
2.
3.
4.
12/86
X = Don't care.
L can be tied to VIH if the valid address has been previously latched.
Depends on G.
WAIT signal polarity is configured using the Set Configuration Register command.
DQ15-DQ0
M58WR032FT, M58WR032FB
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution
of the Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor
the progress or the result of the operation.
The Command Interface is reset to read mode
when power is first applied, when exiting from Reset or whenever VDD is lower than VLKO. Command sequences must be followed exactly. Any
invalid combination of commands will be ignored.
Refer to Table 4., Command Codes, and APPENDIX D., Tables 40, 41, 42 and 43, Command Interface States - Modify and Lock Tables, for a
summary of the Command Interface.
The Command Interface is split into two types of
commands: Standard commands and Factory
Program commands. The following sections explain in detail how to perform each command.
Table 4. Command Codes
Hex Code
Command
01h
Block Lock Confirm
03h
Set Configuration Register Confirm
10h
Alternative Program Setup
20h
Block Erase Setup
2Fh
Block Lock-Down Confirm
30h
Enhanced Factory Program Setup
35h
Double Word Program Setup
40h
Program Setup
50h
Clear Status Register
56h
Quadruple Word Program Setup
60h
Block Lock Setup, Block Unlock Setup,
Block Lock Down Setup and Set
Configuration Register Setup
70h
Read Status Register
75h
Quadruple Enhanced Factory Program
Setup
80h
Bank Erase Setup
90h
Read Electronic Signature
98h
Read CFI Query
B0h
Program/Erase Suspend
C0h
Protection Register Program
D0h
Program/Erase Resume, Block Erase
Confirm, Bank Erase Confirm, Block
Unlock Confirm or Enhanced Factory
Program Confirm
FFh
Read Array
13/86
M58WR032FT, M58WR032FB
COMMAND INTERFACE - STANDARD COMMANDS
The following commands are the basic commands
used to read, write to and configure the device.
Refer to Table 5., Standard Commands, in conjunction with the following text descriptions.
Read Array Command
The Read Array command returns the addressed
bank to Read Array mode. One Bus Write cycle is
required to issue the Read Array command and return the addressed bank to Read Array mode.
Subsequent read operations will read the addressed location and output the data. A Read Array command can be issued in one bank while
programming or erasing in another bank. However
if a Read Array command is issued to a bank currently executing a Program or Erase operation the
command will be executed but the output data is
not guaranteed.
Read Status Register Command
The Status Register indicates when a Program or
Erase operation is complete and the success or
failure of operation itself. Issue a Read Status
Register command to read the Status Register
content. The Read Status Register command can
be issued at any time, even during Program or
Erase operations.
The following read operations output the content
of the Status Register of the addressed bank. The
Status Register is latched on the falling edge of E
or G signals, and can be read until E or G returns
to VIH. Either E or G must be toggled to update the
latched data. See Table 8. for the description of
the Status Register Bits. This mode supports
asynchronous or single synchronous reads only.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes, the Block
Locking Status, the Protection Register, and the
Configuration Register.
The Read Electronic Signature command consists
of one write cycle to an address within one of the
banks. A subsequent Read operation in the same
bank will output the Manufacturer Code, the Device Code, the protection Status of the blocks in
the targeted bank, the Protection Register, or the
Configuration Register (see Table 6.).
If a Read Electronic Signature command is issued
in a bank that is executing a Program or Erase operation the bank will go into Read Electronic Signature mode, subsequent Bus Read cycles will
output the Electronic Signature data and the Program/Erase controller will continue to program or
erase in the background. This mode supports
asynchronous or single synchronous reads only, it
does not support page mode or synchronous burst
reads.
14/86
Read CFI Query Command
The Read CFI Query command is used to read
data from the Common Flash Interface (CFI). The
Read CFI Query Command consists of one Bus
Write cycle, to an address within one of the banks.
Once the command is issued subsequent Bus
Read operations in the same bank read from the
Common Flash Interface.
If a Read CFI Query command is issued in a bank
that is executing a Program or Erase operation the
bank will go into Read CFI Query mode, subsequent Bus Read cycles will output the CFI data
and the Program/Erase controller will continue to
Program or Erase in the background. This mode
supports asynchronous or single synchronous
reads only, it does not support page mode or synchronous burst reads.
The status of the other banks is not affected by the
command (see Table 11.). After issuing a Read
CFI Query command, a Read Array command
should be issued to the addressed bank to return
the bank to Read Array mode.
See APPENDIX B., Common Flash Interface, Tables 30, 31, 32, 33, 34, 35, 36, 37, 38 and 39 for
details on the information contained in the Common Flash Interface memory area.
Clear Status Register Command
The Clear Status Register command can be used
to reset (set to ‘0’) error bits SR1, SR3, SR4 and
SR5 in the Status Register. One bus write cycle is
required to issue the Clear Status Register command. The Clear Status Register command does
not change the Read mode of the bank.
The error bits in the Status Register do not automatically return to ‘0’ when a new command is issued. The error bits in the Status Register should
be cleared before attempting a new Program or
Erase command.
Block Erase Command
The Block Erase command can be used to erase
a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation will
abort, the data in the block will not be changed and
the Status Register will output the error. The Block
Erase command can be issued at any moment, regardless of whether the block has been programmed or not.
Two Bus Write cycles are required to issue the
command.
■
The first bus cycle sets up the Erase
command.
■
The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
M58WR032FT, M58WR032FB
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits SR4 and SR5 are set
and the command aborts. Erase aborts if Reset
turns to VIL. As data integrity cannot be guaranteed when the Erase operation is aborted, the
block must be erased again.
Once the command is issued the device outputs
the Status Register data when any address within
the bank is read. At the end of the operation the
bank will remain in Read Status Register mode until a Read Array, Read CFI Query or Read Electronic Signature command is issued.
During Erase operations the bank containing the
block being erased will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase
Suspend command, all other commands will be ignored. Refer to DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE section for
detailed information about simultaneous operations allowed in banks not being erased. Typical
Erase times are given in Table 14., Program/Erase
Times and Endurance Cycles.
See APPENDIX C., Figure 26., Block Erase Flowchart and Pseudo Code, for a suggested flowchart
for using the Block Erase command.
Program Command
The memory array can be programmed word-byword. Only one Word in one bank can be programmed at any one time. Two bus write cycles
are required to issue the Program Command.
■
The first bus cycle sets up the Program
command.
■
The second latches the Address and the Data
to be written and starts the Program/Erase
Controller.
After programming has started, read operations in
the bank being programmed output the Status
Register content.
During Program operations the bank being programmed will only accept the Read Array, Read
Status Register, Read Electronic Signature, Read
CFI Query and the Program/Erase Suspend command. Refer to DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE section for detailed
information about simultaneous operations allowed in banks not being programmed. Typical
Program times are given in Table 14., Program/
Erase Times and Endurance Cycles.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory location must be
reprogrammed.
See APPENDIX C., Figure 22., Program Flowchart and Pseudo Code, for the flowchart for using
the Program command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Block Erase operation. A
Bank Erase operation cannot be suspended.
One bus write cycle is required to issue the Program/Erase command. Once the Program/Erase
Controller has paused bits SR7, SR6 and/ or SR2
of the Status Register will be set to ‘1’. The command can be addressed to any bank.
During Program/Erase Suspend the Command Interface will accept the Program/Erase Resume,
Read Array (cannot read the erase-suspended
block or the program-suspended Word), Read
Status Register, Read Electronic Signature and
Read CFI Query commands. Additionally, if the
suspend operation was Erase then the Clear status Register, Program, Block Lock, Block LockDown or Block Unlock commands will also be accepted. The block being erased may be protected
by issuing the Block Lock, Block Lock-Down or
Protection Register Program commands. Only the
blocks not being erased may be read or programmed correctly. When the Program/Erase Resume command is issued the operation will
complete. Refer to the DUAL OPERATIONS AND
MULTIPLE BANK ARCHITECTURE section for
detailed information about simultaneous operations allowed during Program/Erase Suspend.
During a Program/Erase Suspend, the device can
be placed in standby mode by taking Chip Enable
to VIH. Program/Erase is aborted if Reset turns to
VIL.
See APPENDIX C., Figure 25., Program Suspend
& Resume Flowchart and Pseudo Code, and Figure 27., Erase Suspend & Resume Flowchart and
Pseudo Code, for flowcharts for using the Program/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend command has paused
it. One Bus Write cycle is required to issue the
command. The command can be written to any
address.
The Program/Erase Resume command does not
change the read mode of the banks. If the suspended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corresponding data. If the bank was in Read Array
mode subsequent read operations will output invalid data.
If a Program command is issued during a Block
Erase Suspend, then the erase cannot be resumed until the programming operation has completed. It is possible to accumulate suspend
operations. For example: suspend an erase oper15/86
M58WR032FT, M58WR032FB
ation, start a programming operation, suspend the
programming operation then read the array. See
APPENDIX C., Figure 25., Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
27., Erase Suspend & Resume Flowchart and
Pseudo Code, for flowcharts for using the Program/Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 128 bit user One-Time-Programmable (OTP) segment of the Protection Register and the Protection Register Lock. The
segment is programmed 16 bits at a time. When
shipped all bits in the segment are set to ‘1’. The
user can only program the bits to ‘0’.
Two write cycles are required to issue the Protection Register Program command.
■
The first bus cycle sets up the Protection
Register Program command.
■
The second latches the Address and the Data
to be written to the Protection Register and
starts the Program/Erase Controller.
Read operations output the Status Register content after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register (see Figure 5.,
Protection Register Memory Map). Attempting to
program a previously protected Protection Register will result in a Status Register error. The protection of the Protection Register is not reversible.
The Protection Register Program cannot be suspended. See APPENDIX C., Figure 29., Protection Register Program Flowchart and Pseudo
Code, for a flowchart for using the Protection Register Program command.
Set Configuration Register Command
The Set Configuration Register command is used
to write a new value to the Configuration Register
which defines the burst length, type, X latency,
Synchronous/Asynchronous Read mode and the
valid Clock edge configuration.
Two Bus Write cycles are required to issue the Set
Configuration Register command.
■
The first cycle writes the setup command and
the address corresponding to the
Configuration Register content.
■
The second cycle writes the Configuration
Register data and the confirm command.
Read operations output the memory array content
after the Set Configuration Register command is
issued.
The value for the Configuration Register is always
presented on A0-A15. CR0 is on A0, CR1 on A1,
etc.; the other address bits are ignored.
16/86
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
■
The first bus cycle sets up the Block Lock
command.
■
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command. .
Table 13. shows the Lock Status after issuing a
Block Lock command.
The Block Lock bits are volatile, once set they remain set until a hardware reset or power-down/
power-up. They are cleared by a Block Unlock
command. Refer to the section, BLOCK LOCKING, for a detailed explanation. See APPENDIX
C., Figure 28., Locking Operations Flowchart and
Pseudo Code, for a flowchart for using the Lock
command.
Block Unlock Command
The Block Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to issue the Block Unlock command.
■
The first bus cycle sets up the Block Unlock
command.
■
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 13. shows the protection status after issuing
a Block Unlock command. Refer to the section,
BLOCK LOCKING, for a detailed explanation and
APPENDIX C., Figure 28., Locking Operations
Flowchart and Pseudo Code, for a flowchart for
using the Unlock command.
Block Lock-Down Command
A locked or unlocked block can be locked-down by
issuing the Block Lock-Down command. A lockeddown block cannot be programmed or erased, or
have its protection status changed when WP is
low, VIL. When WP is high, VIH, the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■
The first bus cycle sets up the Block Lock
command.
■
The second Bus Write cycle latches the block
address.
M58WR032FT, M58WR032FB
ter issuing a Block Lock-Down command. Refer to
the section, BLOCK LOCKING, for a detailed explanation and APPENDIX C., Figure 28., Locking
Operations Flowchart and Pseudo Code, for a
flowchart for using the Lock-Down command.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table 13. shows the Lock Status af-
Commands
Cycles
Table 5. Standard Commands
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA(2)
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA(2)
QD
Clear Status Register
1
Write
BKA
50h
20h
Write
BA
D0h
Write
WA
PD
BA(3)
Block Erase
2
Write
BKA or
Program
2
Write
BKA or WA(3)
40h or 10h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or BA(3)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or BA(3)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or BA(3)
60h
Write
BA
2Fh
Note: 1. X = Don't Care, WA=Word Address in targeted bank, RD = Read Data, SRD = Status Register Data, ESD = Electronic Signature
Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = Program Data, PRA = Protection Register Address,
PRD = Protection Register Data, CRD = Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.
3. Any address within the bank can be used.
17/86
M58WR032FT, M58WR032FB
Table 6. Electronic Signature Codes
Code
Address (h)
Data (h)
Bank Address + 00
0020
Top (M58WR032FT)
Bank Address + 01
8814
Bottom(M58WR032FB)
Bank Address + 01
8815
Manufacturer Code
Device Code
Locked
0001
Unlocked
0000
Block Protection
Block Address + 02
Locked and Locked-Down
0003
Unlocked and Locked-Down
0002
Reserved
Bank Address + 03
Reserved
Configuration Register
Bank Address + 05
CR
ST Factory Default
0002
Protection Register Lock
Bank Address + 80
OTP Area Permanently Locked
0000
Bank Address + 81
Bank Address + 84
Unique Device
Number
Bank Address + 85
Bank Address + 8C
OTP Area
Protection Register
Note: CR = Configuration Register.
Figure 5. Protection Register Memory Map
PROTECTION REGISTER
8Ch
User Programmable OTP
85h
84h
Unique device number
81h
80h
Protection Register Lock
1
0
AI08149
18/86
M58WR032FT, M58WR032FB
COMMAND INTERFACE - FACTORY PROGRAM COMMANDS
The Factory Program commands are used to
speed up programming. They require VPP to be at
VPPH except for the Bank Erase command which
also operates at VPP = VDD. Refer to Table 7., Factory Program Commands, in conjunction with the
following text descriptions.
The use of Factory Program commands requires
certain operating conditions.
■
VPP must be set to VPPH (except for Bank
Erase comand),
■
VDD must be within operating range,
■
Ambient temperature, TA must be 25°C ± 5°C,
■
The targeted block must be unlocked.
Bank Erase Command
The Bank Erase command can be used to erase a
bank. It sets all the bits within the selected bank to
’1’. All previous data in the bank is lost. The Bank
Erase command will ignore any protected blocks
within the bank. If all blocks in the bank are protected then the Bank Erase operation will abort
and the data in the bank will not be changed. The
Status Register will not output any error.
Bank Erase operations can be performed at both
VPP = VPPH and VPP = VDD.
Two Bus Write cycles are required to issue the
command.
■
The first bus cycle sets up the Bank Erase
command.
■
The second latches the bank address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Bank Erase
Confirm (D0h), Status Register bits SR4 and SR5
are set and the command aborts. Erase aborts if
Reset turns to VIL. As data integrity cannot be
guaranteed when the Erase operation is aborted,
the bank must be erased again.
Once the command is issued the device outputs
the Status Register data when any address within
the bank is read. At the end of the operation the
bank will remain in Read Status Register mode until a Read Array, Read CFI Query or Read Electronic Signature command is issued.
During Bank Erase operations the bank being
erased will only accept the Read Array, Read Status Register, Read Electronic Signature and Read
CFI Query command, all other commands will be
ignored.
For optimum performance, Bank Erase commands should be limited to a maximum of 100 Program/Erase cycles per Block. After 100 Program/
Erase cycles the internal algorithm will still operate
properly but some degradation in performance
may occur.
Dual Operations are not supported during Bank
Erase operations and the command cannot be
suspended.
Typical Erase times are given in Table 14., Program/Erase Times and Endurance Cycles.
Double Word Program Command
The Double Word Program command improves
the programming throughput by writing a page of
two adjacent words in parallel. The two words
must differ only for the address A0.
Three bus write cycles are necessary to issue the
Double Word Program command.
■
The first bus cycle sets up the Double Word
Program Command.
■
The second bus cycle latches the Address and
the Data of the first word to be written.
■
The third bus cycle latches the Address and
the Data of the second word to be written and
starts the Program/Erase Controller.
Read operations in the bank being programmed
output the Status Register content after the programming has started.
During Double Word Program operations the bank
being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other
commands will be ignored. Dual operations are
not supported during Double Word Program operations and the command cannot be suspended.
Typical Program times are given in Table 14., Program/Erase Times and Endurance Cycles.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
See APPENDIX C., Figure 23., Double Word Program Flowchart and Pseudo code, for the flowchart for using the Double Word Program
command.
Quadruple Word Program Command
The Quadruple Word Program command improves the programming throughput by writing a
page of four adjacent words in parallel. The four
words must differ only for the addresses A0 and
A1.
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
■
The first bus cycle sets up the Double Word
Program Command.
■
The second bus cycle latches the Address and
the Data of the first word to be written.
■
The third bus cycle latches the Address and
the Data of the second word to be written.
19/86
M58WR032FT, M58WR032FB
The fourth bus cycle latches the Address and
the Data of the third word to be written.
■
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the programming has started.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
During Quadruple Word Program operations the
bank being programmed will only accept the Read
Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other
commands will be ignored.
Dual operations are not supported during Quadruple Word Program operations and the command
cannot be suspended. Typical Program times are
given in Table 14., Program/Erase Times and Endurance Cycles.
See APPENDIX C., Figure 24., Quadruple Word
Program Flowchart and Pseudo Code, for the
flowchart for using the Quadruple Word Program
command.
Enhanced Factory Program Command
The Enhanced Factory Program command can be
used to program large streams of data within any
one block. It greatly reduces the total programming time when a large number of Words are written to a block at any one time.
Dual operations are not supported during the Enhanced Factory Program operation and the command cannot be suspended.
For optimum performance the Enhanced Factory
Program commands should be limited to a maximum of 10 program/erase cycles per block. If this
limit is exceeded the internal algorithm will continue to work properly but some degradation in performance is possible. Typical Program times are
given in Table 14.
The Enhanced Factory Program command has
four phases: the Setup Phase, the Program Phase
to program the data to the memory, the Verify
Phase to check that the data has been correctly
programmed and reprogram if necessary and the
Exit Phase. Refer to Table 7., Factory Program
Commands, and Figure 30., Enhanced Factory
Program Flowchart.
Setup Phase. The Enhanced Factory Program
command requires two Bus Write operations to initiate the command.
■
The first bus cycle sets up the Enhanced
Factory Program command.
■
The second bus cycle confirms the command.
■
20/86
The Status Register P/E.C. Bit SR7 should be
read to check that the P/E.C. is ready. After the
confirm command is issued, read operations
output the Status Register data. The read Status
Register command must not be issued as it will be
interpreted as data to program.
Program Phase. The Program Phase requires
n+1 cycles, where n is the number of Words (refer
to Table 7., Factory Program Commands, and Figure 30., Enhanced Factory Program Flowchart).
Three successive steps are required to issue and
execute the Program Phase of the command.
1. Use one Bus Write operation to latch the Start
Address and the first Word to be programmed.
The Status Register Bank Write Status bit SR0
should be read to check that the P/E.C. is
ready for the next Word.
2. Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address can either remain the Start Address,
in which case the P/E.C. increments the
address location or the address can be
incremented in which case the P/E.C. jumps to
the new address. If any address that is not in
the same block as the Start Address is given
with data FFFFh, the Program Phase
terminates and the Verify Phase begins. The
Status Register bit SR0 should be read
between each Bus Write cycle to check that
the P/E.C. is ready for the next Word.
3. Finally, after all Words have been programmed, write one Bus Write operation with
data FFFFh to any address outside the block
containing the Start Address, to terminate the
programming phase. If the data is not FFFFh,
the command is ignored.
The memory is now set to enter the Verify Phase.
Verify Phase. The Verify Phase is similar to the
Program Phase in that all Words must be resent to
the memory for them to be checked against the
programmed data. The Program/Erase Controller
checks the stream of data with the data that was
programmed in the Program Phase and reprograms the memory location if necessary.
Three successive steps are required to execute
the Verify Phase of the command.
1. Use one Bus Write operation to latch the Start
Address and the first Word, to be verified. The
Status Register bit SR0 should be read to
check that the Program/Erase Controller is
ready for the next Word.
2. Each subsequent Word to be verified is
latched with a new Bus Write operation. The
Words must be written in the same order as in
the Program Phase. The address can remain
the Start Address or be incremented. If any
address that is not in the same block as the
M58WR032FT, M58WR032FB
Start Address is given with data FFFFh, the
Verify Phase terminates. Status Register bit
SR0 should be read to check that the P/E.C. is
ready for the next Word.
3. Finally, after all Words have been verified,
write one Bus Write operation with data FFFFh
to any address outside the block containing
the Start Address, to terminate the Verify
Phase.
If the Verify Phase is successfully completed the
memory remains in Read Status Register mode. If
the Program/Erase Controller fails to reprogram a
given location, the error will be signaled in the Status Register.
Exit Phase. Status Register P/E.C. bit SR7 set to
‘1’ indicates that the device has returned to Read
mode. A full Status Register check should be done
to ensure that the block has been successfully programmed. See the section on the STATUS REGISTER for more details.
Quadruple Enhanced Factory Program
Command
The Quadruple Enhanced Factory Program command can be used to program one or more pages
of four adjacent words in parallel. The four words
must differ only for the addresses A0 and A1.
Dual operations are not supported during Quadruple Enhanced Factory Program operations and
the command cannot be suspended.
The Quadruple Enhanced Factory Program command has four phases: the Setup Phase, the Load
Phase where the data is loaded into the buffer, the
combined Program and Verify Phase where the
loaded data is programmed to the memory and
then automatically checked and reprogrammed if
necessary and the Exit Phase. Unlike the Enhanced Factory Program it is not necessary to resubmit the data for the Verify Phase. The Load
Phase and the Program and Verify Phase can be
repeated to program any number of pages within
the block.
Setup Phase. The Quadruple Enhanced Factory
Program command requires one Bus Write operation to initiate the load phase. After the setup
command is issued, read operations output the
Status Register data. The Read Status Register
command must not be issued as it will be
interpreted as data to program.
Load Phase. The Load Phase requires 4 cycles
to load the data (refer to Table 7., Factory Program
Commands, and Figure 31., Quadruple Enhanced
Factory Program Flowchart). Once the first Word
of each Page is written it is impossible to exit the
Load phase until all four Words have been written.
Two successive steps are required to issue and
execute the Load Phase of the Quadruple Enhanced Factory Program command.
1. Use one Bus Write operation to latch the Start
Address and the first Word of the first Page to
be programmed. For subsequent Pages the
first Word address can remain the Start
Address (in which case the next Page is
programmed) or can be any address in the
same block. If any address with data FFFFh is
given that is not in the same block as the Start
Address, the device enters the Exit Phase. For
the first Load Phase Status Register bit SR7
should be read after the first Word has been
issued to check that the command has been
accepted (bit SR7 set to ‘0’). This check is not
required for subsequent Load Phases.
2. Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address is only checked for the first Word of
each Page as the order of the Words to be
programmed is fixed.
The memory is now set to enter the Program and
Verify Phase.
Program and Verify Phase. In the Program and
Verify Phase the four Words that were loaded in
the Load Phase are programmed in the memory
array and then verified by the Program/Erase Controller. If any errors are found the Program/Erase
Controller reprograms the location. During this
phase the Status Register shows that the Program/Erase Controller is busy, Status Register bit
SR7 set to ‘0’, and that the device is not waiting for
new data, Status Register bit SR0 set to ‘1’. When
Status Register bit SR0 is set to ‘0’ the Program
and Verify phase has terminated.
Once the Verify Phase has successfully completed subsequent pages in the same block can be
loaded and programmed. The device returns to
the beginning of the Load Phase by issuing one
Bus Write operation to latch the Address and the
first of the four new Words to be programmed.
Exit Phase. Finally, after all the pages have been
programmed, write one Bus Write operation with
data FFFFh to any address outside the block containing the Start Address, to terminate the Load
and Program and Verify Phases.
Status Register bit SR7 set to ‘1’ and bit SR0 set
to ‘0’ indicate that the Quadruple Enhanced Factory Program command has terminated. A full Status
Register check should be done to ensure that the
block has been successfully programmed. See the
section on the STATUS REGISTER for more details.
If the Program and Verify Phase has successfully
completed the memory returns to Read mode. If
the P/E.C. fails to program and reprogram a given
location, the error will be signaled in the Status
Register.
21/86
M58WR032FT, M58WR032FB
Command
Phase
Cycles
Table 7. Factory Program Commands
Bus Write Operations
1st
2nd
3rd
Add
Data
Add
Data
Final -1
Add
Data
Final
Add
Data
Add
Data
WA3
PD3
WA4
PD4
Bank Erase
2
BKA
80h
BKA
D0h
Double Word Program(4)
3
BKA or
WA1(8)
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program(5)
5
BKA or
WA1(8)
56h
WA1
PD1
WA2
PD2
2+
n+1
BKA or
WA1(8)
30h
BA or
WA1(9)
D0h
WA1(2)
PD1
WAn(3) PAn
NOT
FFFFh
WA1(2)
n+1
WA1(2)
PD1
WA2(3)
PD2
WA3(3)
PD3
WAn(3) PAn
NOT
FFFFh
WA1(2)
5
BKA or
WA1(8)
75h
WA1(2)
PD1
WA2(7)
PD2
WA3(7) PD3 WA4(7)
Enhanced Setup,
Program
Factory
(6)
Program
Verify, Exit
Setup,
first Load
First
Program &
Quadruple Verify
Enhanced
Subsequent
Factory
Program Loads
(5,6)
Subsequent
Program &
Verify
Exit
PD4
Automatic
4
WA1i
(2)
PD1i
WA2i
(7)
PD2i
WA3i
(7)
PD3i
WA4i
(7)
PD4i
Automatic
1
NOT
WA1
FFFFh
(2)
Note: 1.
2.
3.
4.
5.
6.
WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address.
WA1 is the Start Address. NOT WA1 is any address that is not in the same block as WA1.
Address can remain Starting Address WA1 or be incremented.
Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
A Bus Read must be done between each Write cycle where the data is programmed or verified to read the Status Register and
check that the memory is ready to accept the next data. n = number of Words, i = number of Pages to be programmed.
7. Address is only checked for the first Word of each Page as the order to program the Words in each page is fixed so subsequent
Words in each Page can be written to any address.
8. Any address within the bank can be used.
9. Any address within the block can be used.
22/86
M58WR032FT, M58WR032FB
STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operations.
Issue a Read Status Register command to read
the contents of the Status Register, refer to Read
Status Register Command section for more details. To output the contents, the Status Register is
latched and updated on the falling edge of the
Chip Enable or Output Enable signals and can be
read until Chip Enable or Output Enable returns to
VIH. The Status Register can only be read using
single asynchronous or single synchronous reads.
Bus Read operations from any address within the
bank, always read the Status Register during Program and Erase operations.
The various bits convey information about the status and any errors of the operation. Bits SR7, SR6,
SR2 and SR0 give information on the status of the
device and are set and reset by the device. Bits
SR5, SR4, SR3 and SR1 give information on errors, they are set by the device but must be reset
by issuing a Clear Status Register command or a
hardware reset. If an error bit is set to ‘1’ the Status
Register should be reset before issuing another
command. SR7 to SR1 refer to the status of the
device while SR0 refers to the status of the addressed bank.
The bits in the Status Register are summarized in
Table 8., Status Register Bits. Refer to Table 8. in
conjunction with the following text descriptions.
Program/Erase Controller Status Bit (SR7). The
Program/Erase Controller Status bit indicates
whether the Program/Erase Controller is active or
inactive in any bank. When the Program/Erase
Controller Status bit is Low (set to ‘0’), the Program/Erase Controller is active; when the bit is
High (set to ‘1’), the Program/Erase Controller is
inactive, and the device is ready to process a new
command.
The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller pauses the bit is High.
During Program, Erase, operations the Program/
Erase Controller Status bit can be polled to find the
end of the operation. Other bits in the Status Register should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status, VPP
Status and Block Lock Status bits should be tested
for errors.
Erase Suspend Status Bit (SR6). The
Erase
Suspend Status bit indicates that an Erase operation has been suspended or is going to be sus-
pended in the addressed block. When the Erase
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Resume command.
The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive).
SR7 is set within the Erase Suspend Latency time
of the Program/Erase Suspend command being
issued therefore the memory may still complete
the operation rather than entering the Suspend
mode.
When a Program/Erase Resume command is issued the Erase Suspend Status bit returns Low.
Erase Status Bit (SR5). The Erase Status bit
can be used to identify if the memory has failed to
verify that the block or bank has erased correctly.
When the Erase Status bit is High (set to ‘1’), the
Program/Erase Controller has applied the maximum number of pulses to the block or bank and
still failed to verify that it has erased correctly. The
Erase Status bit should be read once the Program/
Erase Controller Status bit is High (Program/Erase
Controller inactive).
Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a
hardware reset. If set High it should be reset before a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status Bit (SR4). The Program Status
bit is used to identify a Program failure or an attempt to program a ‘1’ to an already programmed
bit when VPP = VPPH.
When the Program Status bit is High (set to ‘1’),
the Program/Erase Controller has applied the
maximum number of pulses to the byte and still
failed to verify that it has programmed correctly.
After an attempt to program a '1' to an already programmed bit, the Program Status bit SR4 only
goes High (set to '1') if VPP = VPPH (if VPP is different from VPPH, SR4 remains Low (set to '0') and
the attempt is not shown).
The Program Status bit should be read once the
Program/Erase Controller Status bit is High (Program/Erase Controller inactive).
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset before a new command is issued, otherwise the new
command will appear to fail.
VPP Status Bit (SR3). The VPP Status bit can be
used to identify an invalid voltage on the VPP pin
during Program and Erase operations. The VPP
pin is only sampled at the beginning of a Program
23/86
M58WR032FT, M58WR032FB
or Erase operation. Indeterminate results can occur if VPP becomes invalid during an operation.
When the VPP Status bit is Low (set to ‘0’), the voltage on the VPP pin was sampled at a valid voltage;
when the VPP Status bit is High (set to ‘1’), the VPP
pin has a voltage that is below the VPP Lockout
Voltage, VPPLK, the memory is protected and Program and Erase operations cannot be performed.
Once set High, the VPP Status bit can only be reset
Low by a Clear Status Register command or a
hardware reset. If set High it should be reset before a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Suspend Status Bit (SR2). The Program Suspend Status bit indicates that a Program
operation has been suspended in the addressed
block. When the Program Suspend Status bit is
High (set to ‘1’), a Program/Erase Suspend command has been issued and the memory is waiting
for a Program/Erase Resume command. The Program Suspend Status should only be considered
valid when the Program/Erase Controller Status
bit is High (Program/Erase Controller inactive).
SR2 is set within the Program Suspend Latency
time of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is issued the Program Suspend Status bit returns Low.
Block Protection Status Bit (SR1). The Block
Protection Status bit can be used to identify if a
Program or Block Erase operation has tried to
modify the contents of a locked block.
24/86
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been attempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Bank Write/Multiple Word Program Status Bit
(SR0). The Bank Write Status bit indicates whether the addressed bank is programming or erasing.
In Enhanced Factory Program mode the Multiple
Word Program bit shows if a Word has finished
programming or verifying depending on the phase.
The Bank Write Status bit should only be considered valid when the Program/Erase Controller Status SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit
and the Bank Write Status bit are Low (set to ‘0’),
the addressed bank is executing a Program or
Erase operation. When the Program/Erase Controller Status bit is Low (set to ‘0’) and the Bank
Write Status bit is High (set to ‘1’), a Program or
Erase operation is being executed in a bank other
than the one being addressed.
In Enhanced Factory Program mode if Multiple
Word Program Status bit is Low (set to ‘0’), the device is ready for the next Word, if the Multiple Word
Program Status bit is High (set to ‘1’) the device is
not ready for the next Word.
Note: Refer to APPENDIX C., FLOWCHARTS
AND PSEUDO CODES, for using the Status Register.
M58WR032FT, M58WR032FB
Table 8. Status Register Bits
Bit
SR7
SR6
SR5
SR4
SR3
SR2
SR1
Name
P/E.C. Status
Erase Suspend Status
Erase Status
Program Status
VPP Status
Type
Logic Level
Definition
'1'
Ready
'0'
Busy
'1'
Erase Suspended
'0'
Erase In progress or Completed
'1'
Erase Error
'0'
Erase Success
'1'
Program Error
'0'
Program Success
'1'
VPP Invalid, Abort
'0'
VPP OK
'1'
Program Suspended
'0'
Program In Progress or Completed
'1'
Program/Erase on protected Block, Abort
'0'
No operation to protected blocks
Status
Status
Error
Error
Error
Program Suspend Status Status
Block Protection Status
Error
SR7 = ‘1’ Not Allowed
'1'
SR7 = ‘0’
Bank Write Status
Status
Program or erase operation in a bank other than
the addressed bank
SR7 = ‘1’ No Program or erase operation in the device
'0'
SR7 = ‘0’ Program or erase operation in addressed bank
SR0
SR7 = ‘1’ Not Allowed
Multiple Word Program
Status (Enhanced
Factory Program mode)
'1'
SR7 = ‘0’ the device is NOT ready for the next word
Status
SR7 = ‘1’ the device is exiting from EFP
'0'
SR7 = ‘0’
the device is ready for the next Word
Note: Logic level '1' is High, '0' is Low.
25/86
M58WR032FT, M58WR032FB
CONFIGURATION REGISTER
The Configuration Register is used to configure
the type of bus access that the memory will perform. Refer to READ MODES section for details
on read operations.
The Configuration Register is set through the
Command Interface. After a Reset or Power-Up
the device is configured for asynchronous page
read (CR15 = 1). The Configuration Register bits
are described in Table 9. They specify the selection of the burst length, burst type, burst X latency
and the Read operation. Refer to Figures 6 and 7
for examples of synchronous burst configurations.
Read Select Bit (CR15)
The Read Select bit, CR15, is used to switch between asynchronous and synchronous Bus Read
operations. When the Read Select bit is set to ’1’,
read operations are asynchronous; when the
Read Select bit is set to ’0’, read operations are
synchronous. Synchronous Burst Read is supported in both parameter and main blocks and can be
performed across banks.
On reset or power-up the Read Select bit is set
to’1’ for asynchronous access.
X-Latency Bits (CR13-CR11)
The X-Latency bits are used during Synchronous
Read operations to set the number of clock cycles
between the address being latched and the first
data becoming available. For correct operation the
X-Latency bits can only assume the values in Table 9., Configuration Register.
The correspondence between X-Latency settings
and the maximum sustainable frequency must be
calculated taking into account some system parameters. Two conditions must be satisfied:
1. Depending on whether tAVK_CPU or tDELAY is
supplied either one of the following two
equations must be satisfied:
(n + 1) tK ≥ tACC - tAVK_CPU + tQVK_CPU
(n + 2) tK ≥ tACC + tDELAY + tQVK_CPU
2. and also
tK > tKQV + tQVK_CPU
where
n is the chosen X-Latency configuration code
tK is the clock period
tAVK_CPU is clock to address valid, L Low, or E
Low, whichever occurs last
tDELAY is address valid, L Low, or E Low to clock,
whichever occurs last
tQVK_CPU is the data setup time required by the
system CPU,
tKQV is the clock to data valid time
tACC is the random access time of the device.
26/86
Refer to Figure 6., X-Latency and Data Output
Configuration Example.
Wait Polarity Bit (CR10)
In synchronous burst mode the Wait signal indicates whether the output data are valid or a WAIT
state must be inserted. The Wait Polarity bit is
used to set the polarity of the Wait signal. When
the Wait Polarity bit is set to ‘0’ the Wait signal is
active Low. When the Wait Polarity bit is set to ‘1’
the Wait signal is active High (default).
Data Output Configuration Bit (CR9)
The Data Output Configuration bit determines
whether the output remains valid for one or two
clock cycles. When the Data Output Configuration
Bit is ’0’ the output data is valid for one clock cycle,
when the Data Output Configuration Bit is ’1’ the
output data is valid for two clock cycles.
The Data Output Configuration depends on the
condition:
■
tK > tKQV + tQVK_CPU
where tK is the clock period, tQVK_CPU is the data
setup time required by the system CPU and tKQV
is the clock to data valid time. If this condition is not
satisfied, the Data Output Configuration bit should
be set to ‘1’ (two clock cycles). Refer to Figure 6.,
X-Latency and Data Output Configuration Example.
Wait Configuration Bit (CR8)
In burst mode the Wait bit controls the timing of the
Wait output pin, WAIT. When WAIT is asserted,
Data is Not Valid and when WAIT is deasserted,
Data is Valid. When the Wait bit is ’0’ the Wait output pin is asserted during the wait state. When the
Wait bit is ’1’ (default) the Wait output pin is asserted one clock cycle before the wait state.
Burst Type Bit (CR7)
The Burst Type bit is used to configure the sequence of addresses read as sequential or interleaved. When the Burst Type bit is ’0’ the memory
outputs from interleaved addresses; when the
Burst Type bit is ’1’ (default) the memory outputs
from sequential addresses. See Table 10., Burst
Type Definition, for the sequence of addresses
output from a given starting address in each mode.
Valid Clock Edge Bit (CR6)
The Valid Clock Edge bit, CR6, is used to configure the active edge of the Clock, K, during Synchronous Burst Read operations. When the Valid
Clock Edge bit is ’0’ the falling edge of the Clock is
the active edge; when the Valid Clock Edge bit is
’1’ the rising edge of the Clock is active.
Wrap Burst Bit (CR3)
The burst reads can be confined inside the 4 or 8
Word boundary (wrap) or overcome the boundary
M58WR032FT, M58WR032FB
(no wrap). The Wrap Burst bit is used to select between wrap and no wrap. When the Wrap Burst bit
is set to ‘0’ the burst read wraps; when it is set to
‘1’ the burst read does not wrap.
Burst length Bits (CR2-CR0)
The Burst Length bits set the number of Words to
be output during a Synchronous Burst Read operation as result of a single address latch cycle.
They can be set for 4 Words, 8 Words, 16 Words
or continuous burst, where all the words are read
sequentially.
In continuous burst mode the burst sequence can
cross bank boundaries.
In continuous burst mode or in 4, 8, 16 Words nowrap, depending on the starting address, the de-
vice asserts the WAIT output to indicate that a delay is necessary before the data is output.
If the starting address is aligned to a 4 Word
boundary no wait states are needed and the WAIT
output is not asserted.
If the starting address is shifted by 1,2 or 3 positions from the four word boundary, WAIT will be
asserted for 1, 2 or 3 clock cycles when the burst
sequence crosses the first 16 Word boundary, to
indicate that the device needs an internal delay to
read the successive words in the array. WAIT will
be asserted only once during a continuous burst
access. See also Table 10., Burst Type Definition.
CR14, CR5 and CR4 are reserved for future use.
Table 9. Configuration Register
Bit
CR15
CR14
CR13-CR11
Description
Value
Description
0
Synchronous Read
1
Asynchronous Read (Default at power-on)
010
2 clock latency
011
3 clock latency
100
4 clock latency
101
5 clock latency
111
Reserved (default)
Read Select
Reserved
X-Latency
Other configurations reserved
CR10
CR9
CR8
CR7
CR6
CR5-CR4
CR3
CR2-CR0
0
WAIT is active Low
1
WAIT is active high (default)
0
Data held for one clock cycle
1
Data held for two clock cycles (default)
0
WAIT is active during wait state
1
WAIT is active one data cycle before wait state (default)
0
Interleaved
1
Sequential (default)
0
Falling Clock edge
1
Rising Clock edge (default)
0
Wrap
1
No Wrap (default)
001
4 Words
010
8 Words
011
16 Words
111
Continuous (CR7 must be set to ‘1’) (default)
Wait Polarity
Data Output
Configuration
Wait Configuration
Burst Type
Valid Clock Edge
Reserved
Wrap Burst
Burst Length
27/86
M58WR032FT, M58WR032FB
4 Words
Start
Add Sequen-tial Interleaved
8 Words
Sequential
Interleaved
16 Words
Sequential
Interleaved
Continuous
Burst
0
0-1-2-3
0-1-2-3 0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-70-1-2-3-4-5- 0-1-2-3-4-5-6-7-8-98-9-10-11-126-7
10-11-12-13-14-15
13-14-15
1
1-2-3-0
1-0-3-2 1-2-3-4-5-6-7-0
1-2-3-4-5-6-7-8-9- 1-0-3-2-5-4-7-6- 1-2-3-4-5-6-71-0-3-2-5-410-11-12-13-14-15- 9-8-11-10-13- ...15-WAIT-16-177-6
0
12-15-14
18...
2
2-3-0-1
2-3-0-1 2-3-4-5-6-7-0-1
2-3-0-1-6-7- 2-3-4-5-6-7-8-9-104-5
11-12-13-14-15-0-1
3
3-0-1-2
3-2-1-0 3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4- 3-4-5-6-7...153-2-1-0-7-6- 3-4-5-6-7-8-9-10-1111-10-9-8-15WAIT-WAIT5-4
12-13-14-15-0-1-2
14-13-12
WAIT-16-17-18...
7-4-5-6
7-6-5-4 7-0-1-2-3-4-5-6
7-8-9-10-11-127-6-5-4-3-2-1-07-6-5-4-3-2- 7-8-9-10-11-12-1313-14-15-WAIT15-14-13-12-111-0
14-15-0-1-2-3-4-5-6
WAIT-WAIT-1610-9-8
17...
0-1-2-3-4-5-6...
2-3-0-1-6-7-4-5- 2-3-4-5-6-7...1510-11-8-9-14- WAIT-WAIT-1615-12-13
17-18...
...
Wrap
Mode
Table 10. Burst Type Definition
7
...
12
12-13-14-15-1617-18...
13
13-14-15-WAIT16-17-18...
14
14-15-WAITWAIT-16-17-18....
15
15-WAIT-WAITWAIT-16-17-18...
28/86
Mode
M58WR032FT, M58WR032FB
4 Words
Start
Add Sequen-tial Interleaved
8 Words
Sequential
Interleaved
16 Words
Sequential
0
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-910-11-12-13-14-15
1
1-2-3-4
1-2-3-4-5-6-7-8
1-2-3-4-5-6-7-8-910-11-12-13-14-15WAIT-16
2
2-3-4-5
2-3-4-5-6-7-89...
2-3-4-5-6-7-8-9-1011-12-13-14-15WAIT-WAIT-16-17
3-4-5-6
3-4-5-6-7-8-910
3-4-5-6-7-8-9-10-1112-13-14-15-WAITWAIT-WAIT16-17-18
7-8-9-10
7-8-9-10-11-1213-14
7-8-9-10-11-12-1314-15-WAIT-WAITWAIT-16-17-18-1920-21-22
12-13-14-1516-17-18-19
12-13-14-15-16-1718-19-20-21-22-2324-25-26-27
3
Interleaved
Continuous
Burst
No-wrap
...
7
...
12 12-13-14-15
13
13-14-15WAIT-16
13-14-15WAIT-16-1718-19-20
13-14-15-WAIT-1617-18-19-20-21-2223-24-25-26-27-28
14
14-15WAITWAIT-16-17
14-15-WAITWAIT-16-1718-19-20-21
14-15-WAIT-WAIT16-17-18-19-20-2122-23-24-25-26-2728-29
15
15-WAITWAITWAIT-1617-18
15-WAIT-WAITWAIT-16-1718-19-20-21-22
15-WAIT-WAITWAIT-16-17-18-1920-21-22-23-24-2526-27-28-29-30
Same as for Wrap
(Wrap /No Wrap
has no effect on
Continuous Burst)
29/86
M58WR032FT, M58WR032FB
Figure 6. X-Latency and Data Output Configuration Example
X-latency
1st cycle
2nd cycle
3rd cycle
4th cycle
K
E
L
A20-A0
tDELAY
VALID ADDRESS
tAVK_CPU
tQVK_CPU
tK
tKQV
tACC
tQVK_CPU
DQ15-DQ0
VALID DATA VALID DATA
Note. Settings shown: X-latency = 4, Data Output held for one clock cycle
AI09303
Figure 7. Wait Configuration Example
E
K
L
A20-A0
DQ15-DQ0
VALID ADDRESS
VALID DATA VALID DATA
NOT VALID
VALID DATA
WAIT
CR8 = '0'
CR10 = '0'
WAIT
CR8 = '1'
CR10 = '0'
WAIT
CR8 = '0'
CR10 = '1'
WAIT
CR8 = '1'
CR10 = '1'
AI09304
30/86
M58WR032FT, M58WR032FB
READ MODES
Read operations can be performed in two different
ways depending on the settings in the Configuration Register. If the clock signal is ‘don’t care’ for
the data output, the read operation is Asynchronous; if the data output is synchronized with clock,
the read operation is Synchronous.
The Read mode and data output format are determined by the Configuration Register. (See CONFIGURATION REGISTER section for details). All
banks supports both asynchronous and synchronous read operations. The Multiple Bank architecture allows read operations in one bank, while
write operations are being executed in another
(see Tables 11 and 12).
Asynchronous Read Mode
In Asynchronous Read operations the clock signal
is ‘don’t care’. The device outputs the data corresponding to the address latched, that is the memory array, Status Register, Common Flash
Interface or Electronic Signature depending on the
command issued. CR15 in the Configuration Register must be set to ‘1’ for Asynchronous operations.
In Asynchronous Read mode a Page of data is internally read and stored in a Page Buffer. The
Page has a size of 4 Words and is addressed by
A0 and A1 address inputs. The address inputs A0
and A1 are not gated by Latch Enable in Asynchronous Read mode.
The first read operation within the Page has a
longer access time (Tacc, Random access time),
subsequent reads within the same Page have
much shorter access times. If the Page changes
then the normal, longer timings apply again.
Asynchronous Read operations can be performed
in two different ways, Asynchronous Random Access Read and Asynchronous Page Read. Only
Asynchronous Page Read takes full advantage of
the internal page storage so different timings are
applied.
During Asynchronous Read operations, after a
bus inactivity of 150ns, the device automatically
switches to the Automatic Standby mode. In this
condition the power consumption is reduced to the
standby value and the outputs are still driven.
In Asynchronous Read mode, the WAIT signal is
always asserted.
See Table 20., Asynchronous Read AC Characteristics, Figure 10., Asynchronous Random Access Read AC Waveforms, and Figure 11.,
Asynchronous Page Read AC Waveforms, for details.
Synchronous Burst Read Mode
In Synchronous Burst Read mode the data is output in bursts synchronized with the clock. It is pos-
sible to perform burst reads across bank
boundaries.
Synchronous Burst Read mode can only be used
to read the memory array. For other read operations, such as Read Status Register, Read CFI
and Read Electronic Signature, Single Synchronous Read or Asynchronous Random Access
Read must be used.
In Synchronous Burst Read mode the flow of the
data output depends on parameters that are configured in the Configuration Register.
A burst sequence is started at the first clock edge
(rising or falling depending on Valid Clock Edge bit
CR6 in the Configuration Register) after the falling
edge of Latch Enable or Chip Enable, whichever
occurs last. Addresses are internally incremented
and after a delay of 2 to 5 clock cycles (X latency
bits CR13-CR11) the corresponding data are output on each clock cycle.
The number of Words to be output during a Synchronous Burst Read operation can be configured
as 4, 8, 16 Words, or Continuous (Burst Length
bits CR2-CR0). The data can be configured to remain valid for one or two clock cycles (Data Output
Configuration bit CR9).
The order of the data output can be modified
through the Burst Type and the Wrap Burst bits in
the Configuration Register. The burst sequence
may be configured to be sequential or interleaved
(CR7). The burst reads can be confined inside the
4, 8 or 16 Word boundary (Wrap) or overcome the
boundary (No Wrap). If the starting address is
aligned to the Burst Length (4, 8 or 16 Words) the
wrapped configuration has no impact on the output
sequence. Interleaved mode is not allowed in Continuous Burst Read mode or with No Wrap sequences.
A WAIT signal may be asserted to indicate to the
system that an output delay will occur. This delay
will depend on the starting address of the burst sequence; the worst case delay will occur when the
sequence is crossing a 16 Word boundary and the
starting address was at the end of a four word
boundary.
WAIT is asserted during X latency, the Wait state
and at the end of 4-, 8- or 16-Word burst. It is only
deasserted when output data are valid. In Continuous Burst Read mode a Wait state will occur
when crossing the first 16 Word boundary. If the
burst starting address is aligned to a 4 Word Page,
the Wait state will not occur.
The WAIT signal can be configured to be active
Low or active High (default) by setting CR10 in the
Configuration Register. The WAIT signal is meaningful only in Synchronous Burst Read mode, in
31/86
M58WR032FT, M58WR032FB
other modes, WAIT is always asserted (except for
Read Array mode).
See Table 21., Synchronous Read AC Characteristics, and Figure 12., Synchronous Burst Read
AC Waveforms, for details.
Synchronous Burst Read Suspend. A
Synchronous Burst Read operation can be suspended, freeing the data bus for other higher priority
devices. It can be suspended during the initial access latency time (before data is output) in which
case the initial latency time can be reduced to zero, or after the device has output data. When the
Synchronous Burst Read operation is suspended,
internal array sensing continues and any previously latched internal data is retained. A burst sequence can be suspended and resumed as often
as required as long as the operating conditions of
the device are met.
A Synchronous Burst Read operation is suspended when E is low and the current address has
been latched (on a Latch Enable rising edge or on
a valid clock edge). The clock signal is then halted
at VIH or at VIL, and G goes high.
When G becomes low again and the clock signal
restarts, the Synchronous Burst Read operation is
resumed exactly where it stopped.
32/86
WAIT being gated by E remains active and will not
revert to high-impedance when G goes high. So if
two or more devices are connected to the system’s
READY signal, to prevent bus contention the
WAIT signal of the Flash memory should not be directly connected to the system’s READY signal.
See Table 21., Synchronous Read AC Characteristics and Figure 14., Synchronous Burst Read
Suspend AC Waveforms, for details.
Single Synchronous Read Mode
Single Synchronous Read operations are similar
to Synchronous Burst Read operations except that
only the first data output after the X latency is valid.
Synchronous Single Reads are used to read the
Electronic Signature, Status Register, CFI, Block
Protection Status, Configuration Register Status
or Protection Register. When the addressed bank
is in Read CFI, Read Status Register or Read
Electronic Signature mode, the WAIT signal is always asserted.
See Table 21., Synchronous Read AC Characteristics and Figure 13., Single Synchronous Read
AC Waveforms, for details.
M58WR032FT, M58WR032FB
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
ed. Also if the suspended operation was Erase
then a Program command can be issued to another block, so the device can have one block in
Erase Suspend mode, one programming and other banks in Read mode. Bus Read operations are
allowed in another bank between setup and confirm cycles of program or erase operations. The
combination of these features means that read operations are possible at any moment.
Tables 11 and 12 show the dual operations possible in other banks and in the same bank. For a
complete list of possible commands refer to APPENDIX D., COMMAND INTERFACE STATE TABLES.
The Multiple Bank Architecture of the
M58WR032FT/B provides flexibility for software
developers by allowing code and data to be split
with 4Mbit granularity. The Dual Operations feature simplifies the software management of the device and allows code to be executed from one
bank while another bank is being programmed or
erased.
The Dual operations feature means that while programming or erasing in one bank, Read operations are possible in another bank with zero
latency (only one bank at a time is allowed to be in
Program or Erase mode). If a Read operation is required in a bank which is programming or erasing,
the Program or Erase operation can be suspendTable 11. Dual Operations Allowed In Other Banks
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Read
Electronic Program
Signature
Block
Erase
Program/ Program/
Erase
Erase
Suspend Resume
Table 12. Dual Operations Allowed In Same Bank
Commands allowed in same bank
Status of bank
Idle
Read
Array
Read
Read
Read
Status
Electronic Program
CFI Query
Register
Signature
Block
Erase
Program/ Program/
Erase
Erase
Suspend Resume
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Erasing
–(2)
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes(1)
Yes
Yes
Yes
Yes(1)
–
–
Yes
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
33/86
M58WR032FT, M58WR032FB
BLOCK LOCKING
The M58WR032FT/B features an instant, individual block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
■
Lock/Unlock - this first level allows softwareonly control of block locking.
■
■
Lock-Down - this second level requires
hardware interaction before locking can be
changed.
VPP ≤ VPPLK - the third level offers a complete
hardware protection against program and
erase on all blocks.
The protection status of each block can be set to
Locked, Unlocked, and Lock-Down. Table 13., defines all of the possible protection states (WP,
DQ1, DQ0), and APPENDIX C., Figure 28., shows
a flowchart for the locking operations.
Reading a Block’s Lock Status
The lock status of every block can be read in the
Read Electronic Signature mode of the device. To
enter this mode write 90h to the device. Subsequent reads at the address specified in Table 6.,
will output the protection status of that block. The
lock status is represented by DQ0 and DQ1. DQ0
indicates the Block Lock/Unlock status and is set
by the Lock command and cleared by the Unlock
command. It is also automatically set when entering Lock-Down. DQ1 indicates the Lock-Down status and is set by the Lock-Down command. It
cannot be cleared by software, only by a hardware
reset or power-down.
The following sections explain the operation of the
locking system.
Locked State
The default status of all blocks on power-up or after a hardware reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
any program or erase. Any program or erase operations attempted on a locked block will return an
error in the Status Register. The Status of a
Locked block can be changed to Unlocked or
Lock-Down using the appropriate software commands. An Unlocked block can be Locked by issuing the Lock command.
Unlocked State
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)),
can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware
reset or when the device is powered-down. The
status of an unlocked block can be changed to
Locked or Locked-Down using the appropriate
34/86
software commands. A locked block can be unlocked by issuing the Unlock command.
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their protection status cannot be changed using software commands alone.
A Locked or Unlocked block can be Locked-Down
by issuing the Lock-Down command. LockedDown blocks revert to the Locked state when the
device is reset or powered-down.
The Lock-Down function is dependent on the WP
input pin. When WP=0 (VIL), the blocks in the
Lock-Down state (0,1,x) are protected from program, erase and protection status changes. When
WP=1 (VIH) the Lock-Down function is disabled
(1,1,x) and Locked-Down blocks can be individually unlocked to the (1,1,0) state by issuing the software command, where they can be erased and
programmed. These blocks can then be re-locked
(1,1,1) and unlocked (1,1,0) as desired while WP
remains high. When WP is Low, blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,x) regardless of any changes made
while WP was high. Device reset or power-down
resets all blocks, including those in Lock-Down, to
the Locked state.
Locking Operations During Erase Suspend
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase operation, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the lock status will be changed. After completing any desired lock, read, or program operations,
resume the erase operation with the Erase Resume command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Locking operations cannot be performed during a
program suspend. Refer to APPENDIX D., COMMAND INTERFACE STATE TABLES, for detailed
information on which commands are valid during
erase suspend.
M58WR032FT, M58WR032FB
Table 13. Lock Status
Current
Protection Status(1)
(WP, DQ1, DQ0)
Next Protection Status(1)
(WP, DQ1, DQ0)
Current State
Program/Erase
Allowed
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
After
WP transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
1,0,1(2)
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0 (3)
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
35/86
M58WR032FT, M58WR032FB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Table 14. Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block or bank are at ‘0’ (preprogrammed). The worst case is when all the bits
in the block or bank are at ‘1’ (not prepro-
grammed). Usually, the system overhead is negligible with respect to the erase time.
In the M58WR032FT/B the maximum number of
Program/ Erase cycles depends on the VPP voltage supply used.
Table 14. Program/Erase Times and Endurance Cycles
Typ
Typical after
100k W/E
Cycles
Max
Unit
0.3
1
2.5
s
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Parameter
Condition
Min
Parameter Block (4 KWord)(2)
Erase
Main Block (32
KWord)
Preprogrammed
3
s
4.5
s
VPP = VDD
Bank (4Mbit)
Not Preprogrammed
Program(3)
Word
10
10
100
µs
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Program
5
10
µs
Erase
5
20
µs
Suspend Latency
Main Blocks
Program/Erase
Cycles (per Block) Parameter Blocks
36/86
100,000
cycles
100,000
cycles
M58WR032FT, M58WR032FB
Parameter
Erase
Condition
Min
Max
Unit
0.25
2.5
s
Main Block (32 KWord)
0.8
4
s
3.5
Word/ Double Word/ Quadruple Word
Parameter Block
(4 KWord)
VPP = VPPH
Typical after
100k W/E
Cycles
Parameter Block (4 KWord)
Bank (4Mbit)
Program(3)
Main Block (32
KWord)
Bank (4Mbit)
Main Blocks
Program/Erase
Cycles (per Block) Parameter Blocks
Note: 1.
2.
3.
4.
Typ
(4)
8
s
100
µs
Quad-Enhanced
Factory
10
ms
Enhanced Factory
25
ms
Quadruple Word(4)
8
ms
Word
32
ms
Quad-Enhanced
Factory
80
ms
Enhanced Factory
200
ms
Quadruple Word(4)
64
ms
Word
256
ms
Quad-Enhanced
Factory(4)
520
ms
Quadruple Word(4)
510
ms
1000
cycles
2500
cycles
TA= –40 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2.24V.
The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
37/86
M58WR032FT, M58WR032FB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 15. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
Max
Ambient Operating Temperature
–40
85
°C
TBIAS
Temperature Under Bias
–40
125
°C
TSTG
Storage Temperature
–65
155
°C
TLEAD
Lead Temperature During Soldering
(1)
°C
TA
VIO
Input or Output Voltage
–0.5
VDDQ+0.6
V
VDD
Supply Voltage
–0.2
2.45
V
Input/Output Supply Voltage
–0.2
2.45
V
Program Voltage
–0.2
14
V
Output Short Circuit Current
100
mA
Time for VPP at VPPH
100
hours
VDDQ
VPP
IO
tVPPH
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK ® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
38/86
M58WR032FT, M58WR032FB
DC AND AC PARAMETERS
Conditions summarized in Table 16., Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when relying on the quoted parameters.
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 16. Operating and AC Measurement Conditions
M58WR032FT, M58WR032FB
60
70
80
Parameter
Units
Min
Max
Min
Max
Min
Max
VDD Supply Voltage
1.7
2
1.7
2
1.7
2
V
VDDQ Supply Voltage
1.7
2.24
1.7
2.24
1.7
2.24
V
VPP Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
V
VPP Supply Voltage (Application environment)
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (CL)
30
30
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
30
pF
5
5
5
ns
0 to VDDQ
0 to VDDQ
0 to VDDQ
V
VDDQ/2
VDDQ/2
VDDQ/2
V
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
VDDQ
VDDQ
VDDQ
VDDQ/2
VDD
0V
16.7kΩ
AI06161
DEVICE
UNDER
TEST
CL
0.1µF
16.7kΩ
0.1µF
CL includes JIG capacitance
AI06162
Table 17. Capacitance
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
Unit
VIN = 0V
6
8
pF
VOUT = 0V
8
12
pF
Note: Sampled only, not 100% tested.
39/86
M58WR032FT, M58WR032FB
Table 18. DC Characteristics - Currents
Symbol
Parameter
ILI
Input Leakage Current
ILO
Output Leakage Current
Supply Current
Asynchronous Read (f=6MHz)
Supply Current
Synchronous Read (f=54MHz)
IDD1
Supply Current
Synchronous Read (f=66MHz)
Test Condition
Min
Typ
Max
Unit
0V ≤ VIN ≤ VDDQ
±1
µA
0V ≤ VOUT ≤ VDDQ
±1
µA
E = VIL, G = VIH
3
6
mA
4 Word
7
16
mA
8 Word
10
18
mA
16 Word
12
22
mA
Continuous
13
25
mA
4 Word
8
17
mA
8 Word
11
20
mA
16 Word
14
25
mA
Continuous
16
30
mA
RP = VSS ± 0.2V
10
50
µA
IDD2
Supply Current (Reset)
IDD3
Supply Current (Standby)
E = VDD ± 0.2V
10
50
µA
IDD4
Supply Current (Automatic Standby)
E = VIL, G = VIH
10
50
µA
VPP = VPPH
8
15
mA
VPP = VDD
10
20
mA
VPP = VPPH
8
15
mA
VPP = VDD
10
20
mA
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
23
45
mA
E = VDD ± 0.2V
10
50
µA
VPP = VPPH
2
5
mA
VPP = VDD
0.2
5
µA
VPP = VPPH
2
5
mA
VPP = VDD
0.2
5
µA
VPP Supply Current (Read)
VPP ≤ VDD
0.2
5
µA
VPP Supply Current (Standby)
VPP ≤ VDD
0.2
5
µA
Supply Current (Program)
IDD5 (1)
Supply Current (Erase)
Supply Current
IDD6 (1,2) (Dual Operations)
IDD7(1)
Supply Current Program/ Erase
Suspended (Standby)
VPP Supply Current (Program)
IPP1(1)
VPP Supply Current (Erase)
IPP2
IPP3(1)
Note: 1. Sampled only, not 100% tested.
2. VDD Dual Operation current is the sum of read and program or erase currents.
40/86
M58WR032FT, M58WR032FB
Table 19. DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100µA
0.1
V
VOH
Output High Voltage
IOH = –100µA
VDDQ –0.1
VPP1
VPP Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
VPPH
VPP Program Voltage Factory
Program, Erase
11.4
12
12.6
V
VPPLK
Program or Erase Lockout
0.4
V
VLKO
VDD Lock Voltage
VRPH
RP pin Extended High Voltage
V
1
V
3.3
V
41/86
42/86
Hi-Z
Hi-Z
tELLH
tLLLH
tAVLH
tLLQV
tAVQV
tELTV
tELQX
tELQV
VALID
Valid Address Latch
Note. Write Enable, W, is High, WAIT is active Low.
DQ0-DQ15
WAIT
G
E
L
A0-A20
tGLQV
Outputs Enabled
tGLQX
tLHGL
tLHAX
tAVAV
Data Valid
VALID
tAXQX
tEHTZ
tGHQZ
tGHQX
tEHQX
tEHQZ
Standby
VALID
AI09305
M58WR032FT, M58WR032FB
Figure 10. Asynchronous Random Access Read AC Waveforms
Hi-Z
Note 1. WAIT is active Low.
DQ0-DQ15
WAIT (1)
G
E
L
A0-A1
A2-A20
tELTV
tELQX
tGLQV
tGLQX
tELQV
Valid Address Latch
tELLH
tLLQV
tLLLH
tAVLH
VALID ADDRESS
tAVAV
Enabled
Outputs
tLHGL
tLHAX
VALID DATA
VALID DATA
VALID ADDRESS
Valid Data
VALID DATA
tAVQV1
VALID ADDRESS
VALID ADDRESS
VALID DATA
VALID ADDRESS
Standby
AI09306
M58WR032FT, M58WR032FB
Figure 11. Asynchronous Page Read AC Waveforms
43/86
M58WR032FT, M58WR032FB
Table 20. Asynchronous Read AC Characteristics
Symbol
Alt
Read Timings
70
80
Unit
tRC
Address Valid to Next Address Valid
Min
60
70
80
ns
tAVQV
tACC
Address Valid to Output Valid (Random)
Max
60
70
80
ns
tAVQV1
tPAGE
Address Valid to Output Valid (Page)
Max
20
20
25
ns
tAXQX (1)
tOH
Address Transition to Output Transition
Min
0
0
0
ns
Chip Enable Low to Wait Valid
Max
11
14
14
ns
tELQV (2)
tCE
Chip Enable Low to Output Valid
Max
60
70
80
ns
tELQX (1)
tLZ
Chip Enable Low to Output Transition
Min
0
0
0
ns
Chip Enable High to Wait Hi-Z
Max
14
17
17
ns
tEHTZ
(1)
tOH
Chip Enable High to Output Transition
Min
0
0
0
ns
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
Max
14
17
17
ns
tGLQV (2)
tOE
Output Enable Low to Output Valid
Max
20
20
25
ns
tGLQX (1)
tOLZ
Output Enable Low to Output Transition
Min
0
0
0
ns
tGHQX (1)
tOH
Output Enable High to Output Transition
Min
0
0
0
ns
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
Max
14
14
14
ns
tAVLH
tAVADVH
Address Valid to Latch Enable High
Min
7
9
9
ns
tELLH
tELADVH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
tLHAX
tADVHAX
Latch Enable High to Address Transition
Min
7
9
9
ns
tLLLH
tADVLADVH
Latch Enable Pulse Width
Min
7
9
9
ns
tLLQV
tADVLQV
Latch Enable Low to Output Valid (Random)
Max
60
70
80
ns
tLHGL
tADVHGL
Latch Enable High to Output Enable Low
Min
0
0
0
ns
tEHQX
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
44/86
60
tAVAV
tELTV
Latch Timings
M58WR032FT/B
Parameter
Hi-Z
tELKH
Hi-Z
tLLLH
Address
Latch
tELTV
tKHAX
tAVKH
tLLKH
tAVLH
VALID ADDRESS
X Latency
tGLQX
Note 2
tKHTV
Note 1
VALID
Valid Data Flow
tKHQV
VALID
Note 2
tKHTX
tKHQX
VALID
Boundary
Crossing
Note 2
NOT VALID
Data
Valid
tGHQZ
AI09307b
Standby
tEHTZ
tEHQZ
tEHQX
tEHEL
VALID
tGHQX
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register.
2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low.
3. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge.
Here the active edge of K is the rising one.
WAIT
G
E
K(3)
L
A0-A20
DQ0-DQ15
M58WR032FT, M58WR032FB
Figure 12. Synchronous Burst Read AC Waveforms
45/86
46/86
Hi-Z
tELKH
Hi-Z
tLLLH
tELTV
tKHAX
tAVKH
tLLKH
tAVLH
VALID ADDRESS
tGLQV
tGLQX
Note 1
Note 3
tKHTV
tKHQV
VALID
NOT VALID
NOT VALID
NOT VALID
tGHQZ
tGHQX
tEHEL
tEHQZ
tEHTZ
NOT VALID
tEHQX
NOT VALID
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register.
2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.
3. WAIT is always asserted when addressed bank is in Read CFI, Read SR or Read electronic signature mode.
WAIT signals valid data if the addressed bank is in Read Array mode.
4. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge.
Here the active edge of K is the rising one.
WAIT(2)
G
E
K(4)
L
A0-A20
DQ0-DQ15
AI09308
M58WR032FT, M58WR032FB
Figure 13. Single Synchronous Read AC Waveforms
tELKH
Hi-Z
Hi-Z
tLLLH
tELTV
tKHAX
tAVKH
tLLKH
tAVLH
VALID ADDRESS
tGLQV
tGLQX
Note 1
tKHQV
VALID
VALID
tGHQZ
Note 3
tGHQX
tEHEL
tEHQZ
AI09309b
tEHTZ
NOT VALID
tEHQX
NOT VALID
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register.
2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.
3. The CLOCK signal can be held high or low
4. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, K, can be configured as the active edge.
Here, the active edge is the rising one.
WAIT(2)
G
E
K(4)
L
A0-A20
DQ0-DQ15
M58WR032FT, M58WR032FB
Figure 14. Synchronous Burst Read Suspend AC Waveforms
47/86
M58WR032FT, M58WR032FB
Figure 15. Clock input AC Waveform
tKHKL
tKHKH
tr
tf
tKLKH
AI06981
Table 21. Synchronous Read AC Characteristics
M58WR032FT/B
Clock Specifications
Synchronous Read Timings
Symbol
Alt
Parameter
Unit
70
80
tAVKH
tAVCLKH
Address Valid to Clock High
Min
7
9
9
ns
tELKH
tELCLKH
Chip Enable Low to Clock High
Min
7
9
9
ns
tELTV
Chip Enable Low to Wait Valid
Max
11
14
14
ns
tEHEL
Chip Enable Pulse Width
(subsequent synchronous reads)
Min
14
14
14
ns
tEHTZ
Chip Enable High to Wait Hi-Z
Max
11
14
14
ns
tKHAX
tCLKHAX
Clock High to Address Transition
Min
7
9
9
ns
tKHQV
tKHTV
tCLKHQV
Clock High to Output Valid
Clock High to WAIT Valid
Max
11
14
14
ns
tKHQX
tKHTX
tCLKHQX
Clock High to Output Transition
Clock High to WAIT Transition
Min
3
4
4
ns
tLLKH
tADVLCLKH
Latch Enable Low to Clock High
Min
7
9
9
ns
Clock Period (f=54MHz)
Min
18.5
18.5
ns
tKHKH
tCLK
Clock Period (f=66MHz)
Min
15
tKHKL
tKLKH
Clock High to Clock Low
Clock Low to Clock High
Min
3.5
4.5
4.5
ns
tf
tr
Clock Fall or Rise Time
Max
3
3
3
ns
Note: 1. Sampled only, not 100% tested.
2. For other timings please refer to Table 20., Asynchronous Read AC Characteristics.
48/86
60
ns
K
VPP
WP
DQ0-DQ15
W
G
E
L
A0-A20
tWHDX
CONFIRM COMMAND
OR DATA INPUT
tVPHWH
tELKV
tWHVPL
tWHWPL
tWHQV
tWHEL
tWHGL
tWHAV
tWHAX
CMD or DATA
VALID ADDRESS
tAVWH
tWPHWH
tWHWL
tWHEH
tWHLL
tWLWH
tLHAX
COMMAND
tLLLH
SET-UP COMMAND
tDVWH
tGHWL
tELWL
tELLH
tAVLH
BANK ADDRESS
tAVAV
tQVVPL
tQVWPL
STATUS REGISTER
STATUS REGISTER
READ
1st POLLING
tELQV
VALID ADDRESS
PROGRAM OR ERASE
AI09310
M58WR032FT, M58WR032FB
Figure 16. Write AC Waveforms, Write Enable Controlled
49/86
M58WR032FT, M58WR032FB
Table 22. Write AC Characteristics, Write Enable Controlled
M58WR032FT/B
Symbol
tAVAV
Alt
tWC
70
80
Min
60
70
80
ns
tAVLH
Address Valid to Latch Enable High
Min
7
9
9
ns
tAVWH(3)
Address Valid to Write Enable High
Min
40
45
50
ns
Data Valid to Write Enable High
Min
40
45
50
ns
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
tELQV
Chip Enable Low to Output Valid
Min
60
70
80
ns
tELKV
Chip Enable Low to Clock Valid
Min
7
9
9
ns
tGHWL
Output Enable High to Write Enable Low
Min
14
17
17
ns
tLHAX
Latch Enable High to Address Transition
Min
7
9
9
ns
tLLLH
Latch Enable Pulse Width
Min
7
9
9
ns
Write Enable High to Address Valid
Min
0
0
0
ns
tDS
tELLH
tELWL
Write Enable Controlled Timings
Unit
60
Address Valid to Next Address Valid
tDVWH
tCS
tWHAV(3)
tWHAX(3)
tAH
Write Enable High to Address Transition
Min
0
0
0
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
0
ns
Write Enable High to Chip Enable Low
Min
20
25
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
0
0
ns
tWHLL
Write Enable High to Latch Enable Low
Min
0
0
0
ns
Write Enable High to Write Enable Low
Min
20
25
25
ns
Write Enable High to Output Valid
Min
80
95
105
ns
Write Enable Low to Write Enable High
Min
40
45
50
ns
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
0
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
0
0
ns
VPP High to Write Enable High
Min
200
200
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
200
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
200
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
200
200
ns
tWHEL(2)
tWHWL
tWPH
tWHQV
tWLWH
Protection Timings
Parameter
tVPHWH
tWP
tVPS
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
3. Meaningful only if L is always kept low.
50/86
K
VPP
WP
DQ0-DQ15
E
G
W
L
A0-A20
tELEH
tLHAX
COMMAND
SET-UP COMMAND
tDVEH
tLLLH
tELLH
tGHEL
tWLEL
tAVLH
BANK ADDRESS
tEHDX
tEHEL
tEHWH
CMD or DATA
tEHAX
CONFIRM COMMAND
OR DATA INPUT
tVPHEH
tWPHEH
tAVEH
VALID ADDRESS
tAVAV
tELKV
tEHVPL
tEHWPL
tWHQV
tWHEL
tEHGL
tQVVPL
tQVWPL
STATUS REGISTER
STATUS REGISTER
READ
1st POLLING
tELQV
VALID ADDRESS
PROGRAM OR ERASE
AI09311
M58WR032FT, M58WR032FB
Figure 17. Write AC Waveforms, Chip Enable Controlled
51/86
M58WR032FT, M58WR032FB
Table 23. Write AC Characteristics, Chip Enable Controlled
M58WR032FT/B
Symbol
Chip Enable Controlled Timings
tAVAV
Alt
tWC
Unit
60
70
80
Address Valid to Next Address Valid
Min
60
70
80
ns
tAVEH
Address Valid to Chip Enable High
Min
40
45
50
ns
tAVLH
Address Valid to Latch Enable High
Min
7
9
9
ns
tDVEH
tDS
Data Valid to Chip Enable High
Min
40
45
50
ns
tEHAX
tAH
Chip Enable High to Address Transition
Min
0
0
0
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
20
25
25
ns
Chip Enable High to Output Enable Low
Min
0
0
0
ns
Chip Enable High to Write Enable High
Min
0
0
0
ns
Chip Enable Low to Clock Valid
Min
7
9
9
ns
Chip Enable Low to Chip Enable High
Min
40
45
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
tELQV
Chip Enable Low to Output Valid
Min
60
70
80
ns
tGHEL
Output Enable High to Chip Enable Low
Min
14
17
17
ns
tLHAX
Latch Enable High to Address Transition
Min
7
9
9
ns
tLLLH
Latch Enable Pulse Width
Min
7
9
9
ns
Write Enable High to Chip Enable Low
Min
20
25
25
ns
Write Enable High to Output Valid
Min
80
95
105
ns
Write Enable Low to Chip Enable Low
Min
0
0
0
ns
tEHVPL
Chip Enable High to VPP Low
Min
200
200
200
ns
tEHWPL
Chip Enable High to Write Protect Low
Min
200
200
200
ns
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
0
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
0
0
ns
VPP High to Chip Enable High
Min
200
200
200
ns
Write Protect High to Chip Enable High
Min
200
200
200
ns
tEHGL
tEHWH
tCH
tELKV
tELEH
tCP
tWHEL(2)
tWHQV
tWLEL
Protection Timings
Parameter
tVPHEH
tWPHEH
tCS
tVPS
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
52/86
M58WR032FT, M58WR032FB
Figure 18. Reset and Power-up AC Waveforms
tPHWL
tPHEL
tPHGL
tPHLL
W, E, G, L
tPLWL
tPLEL
tPLGL
tPLLL
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-Up
Reset
AI06976
Table 24. Reset and Power-up AC Characteristics
Symbol
Parameter
tPLWL
tPLEL
tPLGL
tPLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
tPHWL
tPHEL
tPHGL
tPHLL
Test Condition
60
70
80
Unit
During Program
Min
10
10
10
µs
During Erase
Min
20
20
20
µs
Other Conditions
Min
80
80
80
ns
Reset High to
Write Enable Low
Chip Enable Low
Output Enable Low
Latch Enable Low
Min
30
30
30
ns
tPLPH (1,2)
RP Pulse Width
Min
50
50
50
ns
tVDHPH (3)
Supply Voltages High to Reset
High
Min
50
50
50
µs
Note: 1. The device Reset is possible but not guaranteed if tPLPH < 50ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
53/86
M58WR032FT, M58WR032FB
PACKAGE MECHANICAL
Figure 19. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Bottom View Package Outline
D
D1
FD
FE
E
SD
E1
ddd
BALL "A1"
e
e
b
A
A2
A1
BGA-Z38
Note: Drawing is not to scale.
Table 25. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.000
A1
Max
0.0394
0.200
0.0079
A2
0.660
0.0260
b
0.350
0.300
0.400
0.0138
0.0118
0.0157
D
7.700
7.600
7.800
0.3031
0.2992
0.3071
D1
5.250
–
–
0.2067
–
–
ddd
0.080
0.0031
e
0.750
–
–
0.0295
–
–
E
9.000
8.900
9.100
0.3543
0.3504
0.3583
E1
4.500
–
–
0.1772
–
–
FD
1.225
–
–
0.0482
–
–
FE
2.250
–
–
0.0886
–
–
SD
0.375
–
–
0.0148
–
–
54/86
M58WR032FT, M58WR032FB
Figure 20. VFBGA56 Daisy Chain - Package Connections (Top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
AI07731b
55/86
M58WR032FT, M58WR032FB
Figure 21. VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through package)
1
2
3
4
5
6
7
8
START POINT
A
B
C
D
E
F
G
END POINT
AI07755
56/86
M58WR032FT, M58WR032FB
PART NUMBERING
Table 26. Ordering Information Scheme
Example:
M58WR032FT
70 ZB
6
T
Device Type
M58
Architecture
W = Multiple Bank, Burst Mode
Operating Voltage
R = VDD = 1.7V to 2V, VDDQ = 1.7V to 2.24V
Device Function
032FT = 32 Mbit, Top Boot
032FB = 32 Mbit, Bottom Boot
Speed
60 = 60ns
70 = 70ns
80 = 80ns
Package
ZB = VFBGA56: 7.7 x 9mm, 8x7 active ball array, 0.75 mm pitch
Temperature Range
6 = –40 to 85°C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-Free and RoHS Package, Standard Packing
F = Lead-Free and RoHS Package, Tape & Reel Packing
Table 27. Daisy Chain Ordering Scheme
Example:
M58WR032F
-ZB T
Device Type
M58WR032F
Daisy Chain
ZB = VFBGA56: 7.7 x 9mm, 8x7 active ball array, 0.75 mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-Free and RoHS Package, Standard Packing
F = Lead-Free and RoHS Package, Tape & Reel Packing
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST
Sales Office nearest to you.
57/86
M58WR032FT, M58WR032FB
APPENDIX A. BLOCK ADDRESS TABLES
Size
(KWord)
Address Range
0
4
1FF000-1FFFFF
1
4
1FE000-1FEFFF
2
4
1FD000-1FDFFF
3
4
1FC000-1FCFFF
4
4
1FB000-1FBFFF
5
4
1FA000-1FAFFF
6
4
1F9000-1F9FFF
7
4
1F8000-1F8FFF
8
32
1F0000-1F7FFF
9
32
1E8000-1EFFFF
10
32
1E0000-1E7FFF
11
32
1D8000-1DFFFF
Bank 2
Bank 1
Bank 3
1D0000-1D7FFF
13
32
1C8000-1CFFFF
14
32
1C0000-1C7FFF
15
32
1B8000-1BFFFF
16
32
1B0000-1B7FFF
17
32
1A8000-1AFFFF
18
32
1A0000-1A7FFF
19
32
198000-19FFFF
20
32
190000-197FFF
21
32
188000-18FFFF
22
32
180000-187FFF
23
32
178000-17FFFF
24
32
170000-177FFF
25
32
168000-16FFFF
26
32
160000-167FFF
27
32
158000-15FFFF
28
58/86
32
32
150000-157FFF
29
32
30
32
148000-14FFFF
140000-147FFF
31
32
138000-13FFFF
32
32
130000-137FFF
33
32
128000-12FFFF
34
32
120000-127FFF
35
32
118000-11FFFF
36
32
110000-117FFF
37
32
108000-10FFFF
38
32
100000-107FFF
Bank 6
12
Bank 5
#
Bank 7
Parameter Bank
Bank
Bank 4
Table 28. Top Boot Block Addresses,
M58WR032FT
39
32
0F8000-0FFFFF
40
32
0F0000-0F7FFF
41
32
0E8000-0EFFFF
42
32
0E0000-0E7FFF
43
32
0D8000-0DFFFF
44
32
0D0000-0D7FFF
45
32
0C8000-0CFFFF
46
32
0C0000-0C7FFF
47
32
0B8000-0BFFFF
48
32
0B0000-0B7FFF
49
32
0A8000-0AFFFF
50
32
0A0000-0A7FFF
51
32
098000-09FFFF
52
32
090000-097FFF
53
32
088000-08FFFF
54
32
080000-087FFF
55
32
078000-07FFFF
56
32
070000-077FFF
57
32
068000-06FFFF
58
32
060000-067FFF
59
32
058000-05FFFF
60
32
050000-057FFF
61
32
048000-04FFFF
62
32
040000-047FFF
63
32
038000-03FFFF
64
32
030000-037FFF
65
32
028000-02FFFF
66
32
020000-027FFF
67
32
018000-01FFFF
68
32
010000-017FFF
69
32
008000-00FFFF
70
32
000000-007FFF
Note: There are two Bank Regions: Bank Region 1 contains all the
banks that are made up of main blocks only; Bank Region 2
contains the banks that are made up of the parameter and
main blocks (Parameter Bank).
M58WR032FT, M58WR032FB
#
Size
(KWord)
Address Range
70
32
1F8000-1FFFFF
69
32
1F0000-1F7FFF
68
32
1E8000-1EFFFF
67
32
1E0000-1E7FFF
66
32
1D8000-1DFFFF
Bank 5
32
0B8000-0BFFFF
0B0000-0B7FFF
28
32
0A8000-0AFFFF
27
32
0A0000-0A7FFF
26
32
098000-09FFFF
25
32
090000-097FFF
24
32
088000-08FFFF
23
32
080000-087FFF
32
078000-07FFFF
1D0000-1D7FFF
64
32
1C8000-1CFFFF
21
32
070000-077FFF
63
32
1C0000-1C7FFF
20
32
068000-06FFFF
19
32
060000-067FFF
18
32
058000-05FFFF
17
32
050000-057FFF
16
32
048000-04FFFF
15
32
040000-047FFF
14
32
038000-03FFFF
13
32
030000-037FFF
12
32
028000-02FFFF
62
32
1B8000-1BFFFF
61
32
1B0000-1B7FFF
60
32
1A8000-1AFFFF
59
32
1A0000-1A7FFF
58
32
198000-19FFFF
57
32
190000-197FFF
32
188000-18FFFF
55
32
180000-187FFF
54
32
178000-17FFFF
53
32
170000-177FFF
52
32
168000-16FFFF
51
32
160000-167FFF
50
32
158000-15FFFF
32
150000-157FFF
48
32
148000-14FFFF
47
32
140000-147FFF
46
32
138000-13FFFF
45
32
130000-137FFF
44
32
128000-12FFFF
43
32
120000-127FFF
42
32
Bank 1
32
49
Bank 4
32
29
65
56
Bank 3
30
22
118000-11FFFF
41
32
110000-117FFF
40
32
108000-10FFFF
39
32
100000-107FFF
38
32
0F8000-0FFFFF
37
32
0F0000-0F7FFF
36
32
0E8000-0EFFFF
35
32
0E0000-0E7FFF
34
32
0D8000-0DFFFF
33
32
0D0000-0D7FFF
32
32
0C8000-0CFFFF
31
32
0C0000-0C7FFF
Parameter Bank
Bank 6
Bank 7
Bank
Bank 2
Table 29. Bottom Boot Block Addresses,
M58WR032FB
11
32
020000-027FFF
10
32
018000-01FFFF
9
32
010000-017FFF
8
32
008000-00FFFF
7
4
007000-007FFF
6
4
006000-006FFF
5
4
005000-005FFF
4
4
004000-004FFF
3
4
003000-003FFF
2
4
002000-002FFF
1
4
001000-001FFF
0
4
000000-000FFF
Note: There are two Bank Regions: Bank Region 2 contains all the
banks that are made up of main blocks only; Bank Region 1
contains the banks that are made up of the parameter and
main blocks (Parameter Bank).
59/86
M58WR032FT, M58WR032FB
APPENDIX B. COMMON FLASH INTERFACE
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when
necessary.
When the Read CFI Query Command is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 30, 31,
32, 33, 34, 35, 36, 37, 38 and 39 show the ad-
dresses used to retrieve the data. The Query data
is always presented on the lowest order data outputs (DQ0-DQ7), the other outputs (DQ8-DQ15)
are set to 0.
The CFI data structure also contains a security
area where a 64 bit unique security number is written (see Figure 5., Protection Register Memory
Map). This area can be accessed only in Read
mode by the final user. It is impossible to change
the security number after it has been written by
ST. Issue a Read Array command to return to
Read mode.
Table 30. Query Structure Overview
Offset
Sub-section Name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Security Code Area
Lock Protection Register
Unique device Number and
User Programmable OTP
80h
Note: The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections
detailed in Tables 31, 32, 33 and 34. Query data is always presented on the lowest order data outputs.
60/86
M58WR032FT, M58WR032FB
Table 31. CFI Query Identification String
Offset
Sub-section Name
Description
00h
0020h
Manufacturer Code
01h
8814h
8815h
Device Code
02h
reserved
Reserved
03h
reserved
Reserved
04h-0Fh
reserved
Reserved
10h
0051h
11h
0052h
12h
0059h
13h
0003h
14h
0000h
15h
offset = P = 0039h
16h
0000h
17h
0000h
18h
0000h
19h
value = A = 0000h
1Ah
0000h
Value
ST
Top (M58WR032FT)
Bottom (M58WR032FB)
"Q"
Query Unique ASCII String "QRY"
"R"
"Y"
Primary Algorithm Command Set and Control Interface
ID code 16 bit ID code defining a specific algorithm
Address for Primary Algorithm extended Query table
(see Table 34.)
p = 39h
Alternate Vendor Command Set and Control Interface
ID Code second vendor - specified algorithm supported
NA
Address for Alternate Algorithm extended Query table
NA
61/86
M58WR032FT, M58WR032FB
Table 32. CFI Query System Interface Information
Offset
Data
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
12.6V
1Fh
0004h
Typical time-out per single byte/word program = 2n µs
16µs
20h
0000h
Typical time-out for multi-Byte programming = 2n µs
NA
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0003h
Maximum time-out for word program = 2n times typical
24h
0000h
Maximum time-out for multi-Byte programming = 2n times typical
NA
25h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA
62/86
Description
Value
128µs
M58WR032FT, M58WR032FB
Table 33. Device Geometry Definition
Data
27h
0016h
Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
2Dh
2Eh
003Eh
0000h
Region 1 Information
Number of identical-size erase blocks = 003Eh+1
63
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase blocks = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
35h
38h
reserved
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
31h
32h
003Eh
0000h
Region 2 Information
Number of identical-size erase block = 003Eh+1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
35h
38h
reserved
M58WR032FB
M58WR032FT
Offset Word
Mode
Description
Reserved for future erase block region information
Reserved for future erase block region information
Value
4 MByte
x16
Async.
NA
64 KByte
8
8 KByte
NA
8
8 KByte
63
64 KByte
NA
63/86
M58WR032FT, M58WR032FB
Table 34. Primary Algorithm-Specific Extended Query Table
Offset
Data
(P)h = 39h
0050h
0052h
Description
Value
"P"
Primary Algorithm extended Query table unique ASCII string “PRI”
0049h
"R"
"I"
(P+3)h = 3Ch
0031h
Major version number, ASCII
"1"
(P+4)h = 3Dh
0033h
Minor version number, ASCII
"3"
(P+5)h = 3Eh
00E6h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
0003h
(P+7)h = 40h
0000h
(P+8)h = 41h
0000h
(P+9)h = 42h
0001h
bit 0 Chip Erase supported (1 = Yes, 0 = No)
bit 1 Erase Suspend supported (1 = Yes, 0 = No)
bit 2 Program Suspend supported (1 = Yes, 0 = No)
bit 3 Legacy Lock/Unlock supported (1 = Yes, 0 = No)
bit 4 Queued Erase supported (1 = Yes, 0 = No)
bit 5 Instant individual block locking supported (1 = Yes, 0 = No)
bit 6 Protection bits supported (1 = Yes, 0 = No)
bit 7 Page mode read supported (1 = Yes, 0 = No)
bit 8 Synchronous read supported (1 = Yes, 0 = No)
bit 9 Simultaneous operation supported (1 = Yes, 0 = No)
bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31
bit field of optional features follows at the end of the bit-30
field.
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
Yes
bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1 Reserved; undefined bits are ‘0’
(P+A)h = 43h
0003h
(P+B)h = 44h
0000h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0 Block protect Status Register Lock/Unlock
bit active(1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
Yes
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
(P+C)h = 45h
0018h
(P+D)h = 46h
00C0h
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
1.8V
VPP Supply Optimum Program/Erase voltage
64/86
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12V
M58WR032FT, M58WR032FB
Table 35. Protection Register Information
Offset
Data
Description
Value
(P+E)h = 47h
0001h
Number of protection register fields in JEDEC ID space. 0000h indicates that
256 fields are available.
1
(P+F)h = 48h
0080h
(P+10)h = 49h
0000h
(P+11)h = 4Ah
0003h
(P+12)h= 4Bh
0004h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2n bytes in factory pre-programmed region
Bits 24-31 2n bytes in user programmable region
0080h
8 Bytes
16 Bytes
Table 36. Burst Read Information
Offset
Data
Description
Value
(P+13)h = 4Ch
0003h
Page-mode read capability
bits 0-7 ’n’ such that 2n HEX value represents the number of read-page
bytes. See offset 28h for device word width to determine
page-mode data output width.
8 Bytes
(P+14)h = 4Dh
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+15)h = 4Eh
0001h
Synchronous mode read capability configuration 1
bit 3-7 Reserved
bit 0-2 ’n’ such that 2n+1 HEX value represents the maximum number of
continuous synchronous reads when the device is configured
for its maximum word width. A value of 07h indicates that the
device is capable of continuous linear bursts that will output
data until the internal burst counter reaches the end of the
device’s burstable address space. This field’s 3-bit value can
be written directly to the read configuration register bit 0-2 if
the device is configured for its maximum word width. See
offset 28h for word width to determine the burst data output
width.
4
(P+16)h = 4Fh
0002h
Synchronous mode read capability configuration 2
8
(P+17)h = 50h
0003h
Synchronous mode read capability configuration 3
16
(P+18)h = 51h
0007h
Synchronous mode read capability configuration 4
Cont.
Table 37. Bank and Erase Block Region Information
M58WR032FT (top)
M58WR032FB (bottom)
Description
Offset
Data
Offset
Data
(P+19)h = 52h
02h
(P+19)h = 52h
02h
Number of Bank Regions within the device
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see Table 28. and Table 29.
65/86
M58WR032FT, M58WR032FB
Table 38. Bank and Erase Block Region 1 Information
M58WR032FT (top)
M58WR032FB(bottom)
Description
Offset
Data
Offset
Data
(P+1A)h = 53h
07h
(P+1A)h = 53h
01h
(P+1B)h = 54h
00h
(P+1B)h = 54h
00h
(P+1C)h = 55h
11h
(P+1C)h = 55h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
00h
Number of program or erase operations allowed in other banks
while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.(2)
Number of identical banks within Bank Region 1
(P+1D)h = 56h
(P+1E)h = 57h
00h
00h
(P+1D)h = 56h
(P+1E)h = 57h
(P+1F)h = 58h
01h
(P+1F)h = 58h
02h
(P+20)h = 59h
07h
(P+20)h = 59h
07h
(P+21)h = 5Ah
00h
(P+21)h = 5Ah
00h
(P+22)h = 5Bh
00h
(P+22)h = 5Bh
20h
(P+23)h = 5Ch
01h
(P+23)h = 5Ch
00h
(P+24)h = 5Dh
64h
(P+24)h = 5Dh
64h
(P+25)h = 5Eh
00h
(P+25)h = 5Eh
00h
(P+26)h = 5Fh
(P+27)h = 60h
66/86
01h
03h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
01h
Bank Region 1 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
(P+27)h = 60h
03h
Bank Region 1 (Erase Block Type 1): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+28)h = 61h
06h
(P+29)h = 62h
00h
(P+2A)h = 63h
00h
(P+2B)h = 64h
01h
(P+2C)h = 65h
64h
(P+2D)h = 66h
00h
(P+26)h = 5Fh
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
M58WR032FT, M58WR032FB
M58WR032FT (top)
M58WR032FB(bottom)
Description
Offset
Data
Offset
(P+2E)h = 67h
(P+2F)h = 68h
Data
01h
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
03h
Bank Region 1 (Erase Block Type 2): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see Table 28. and Table 29.
Table 39. Bank and Erase Block Region 2 Information
M58WR032FT (top)
M58WR032FB (bottom)
Description
Offset
Data
Offset
Data
(P+28)h = 61h
01h
(P+30)h = 69h
07h
(P+29)h = 62h
00h
(P+31)h = 6Ah
00h
Number of identical banks within Bank Region 2
(P+2A)h = 63h
11h
(P+32)h = 6Bh
11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2B)h = 64h
00h
(P+33)h = 6Ch
00h
Number of program or erase operations allowed in other banks
while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.(2)
(P+2C)h = 65h
00h
(P+34)h = 6Dh
(P+2D)h = 66h
02h
(P+35)h = 6Eh
01h
(P+2E)h = 67h
06h
(P+36)h = 6Fh
07h
(P+2F)h = 68h
00h
(P+37)h = 70h
00h
(P+30)h = 69h
00h
(P+38)h = 71h
00h
(P+31)h = 6Ah
01h
(P+39)h = 72h
01h
(P+32)h = 6Bh
64h
(P+3A)h = 73h
64h
(P+33)h = 6Ch
00h
(P+3B)h = 74h
00h
(P+34)h = 6Dh
01h
(P+3C)h = 75h
01h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
67/86
M58WR032FT, M58WR032FB
M58WR032FT (top)
M58WR032FB (bottom)
Description
Offset
Data
(P+35)h = 6Eh
03h
(P+36)h = 6Fh
07h
(P+37)h = 70h
00h
(P+38)h = 71h
20h
(P+39)h = 72h
00h
(P+3A)h = 73h
64h
(P+3B)h = 74h
00h
(P+3C)h = 75h
(P+3D)h = 76h
Offset
(P+3D)h = 76h
Data
03h
Bank Region 2 (Erase Block Type 1): Page mode and
synchronous mode capabilities (defined in table 10)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
Bank Region 2 (Erase Block Type 2)
Minimum block erase cycles × 1000
01h
Bank Region 2 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
03h
Bank Region 2 (Erase Block Type 2): Page mode and
synchronous mode capabilities (defined in table 10)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+3E)h = 77h
(P+3E)h = 77h
Feature Space definitions
(P+3F)h = 78h
(P+3F)h = 78h
Reserved
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see Table 28. and Table 29.
68/86
M58WR032FT, M58WR032FB
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 22. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
"
writeToFlash (addressToProgram, 0x40);
/*writeToFlash (addressToProgram, 0x10);*/
/*see note (3)*/
"
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write 40h or 10h (3)
Write Address
& Data
do {
status_register=readFlash (addressToProgram);
"see note (3)";
/* E or G must be toggled*/
Read Status
Register (3)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06170b
Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
69/86
M58WR032FT, M58WR032FB
Figure 23. Double Word Program Flowchart and Pseudo code
Start
Write 35h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (addressToProgram1, 0x35);
/*see note (4)*/
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 1
& Data 1 (3, 4)
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (addressToProgram) ;
"see note (4)"
/* E or G must be toggled*/
Read Status
Register (4)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06171b
Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
4. Any address within the bank can equally be used.
70/86
M58WR032FT, M58WR032FB
Figure 24. Quadruple Word Program Flowchart and Pseudo Code
Start
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (addressToProgram1, 0x56);
/*see note (4) */
Write 56h
Write Address 1
& Data 1 (3, 4)
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 2
& Data 2 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
Write Address 3
& Data 3 (3)
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
Write Address 4
& Data 4 (3)
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (addressToProgram) ;
/"see note (4) "/
/* E or G must be toggled*/
Read Status
Register (4)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06977b
Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
4. Any address within the bank can equally be used.
71/86
M58WR032FT, M58WR032FB
Figure 25. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
program has already completed */
Write 70h
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
Read Status
Register
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR2 = 1
NO
Program Complete
if (status_register.SR2==0) /*program completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
YES
Read Data
}
else
Write FFh
{ writeToFlash (bank_address, 0xFF) ;
Read data from
another address
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
writeToFlash (bank_address, 0x70) ;
/*read status register to check if program has completed */
Write 70h(1)
}
Program Continues with
Bank in Read Status
Register Mode
}
AI10117b
Note: The Read Status Register command (Write 70h) can be issued just before or just after the Program Resume command.
72/86
M58WR032FT, M58WR032FB
Figure 26. Block Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (blockToErase, 0x20) ;
/*see note (2) */
Write 20h (2)
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
status_register=readFlash (blockToErase) ;
/* see note (2) */
/* E or G must be toggled*/
Read Status
Register (2)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1)
YES
Command
Sequence Error (1)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
SR4, SR5 = 1
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
error_handler ( ) ;
NO
SR5 = 0
NO
Erase Error (1)
if ( (status_register.SR5==1) )
/* erase error */
error_handler ( ) ;
YES
SR1 = 0
NO
Erase to Protected
Block Error (1)
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06174b
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can be used also.
73/86
M58WR032FT, M58WR032FB
Figure 27. Erase Suspend & Resume Flowchart and Pseudo Code
Start
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
Write B0h
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
Write 70h
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
Read Status
Register
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR6 = 1
NO
Erase Complete
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
Write FFh
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Read Data
YES
Write FFh
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
Read data from another block
or
Program/Protection Register Program
or
Block Lock/Unlock/Lock-Down
/*read or program data from another block*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
Write D0h
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
Write 70h(1)
}
}
Erase Continues with
Bank in Read Status
Register Mode
Note: The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
74/86
AI10116b
M58WR032FT, M58WR032FB
Figure 28. Locking Operations Flowchart and Pseudo Code
Start
locking_operation_command (address, lock_operation) {
writeToFlash (address, 0x60) ; /*configuration setup*/
/* see note (1) */
Write 60h (1)
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
Write
01h, D0h or 2Fh
writeToFlash (address, 0x90) ;
/*see note (1) */
Write 90h (1)
Read Block
Lock States
Locking
change
confirmed?
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
NO
YES
writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/
/*see note (1) */
Write FFh (1)
}
End
AI06176b
Note: 1. Any address within the bank can equally be used.
75/86
M58WR032FT, M58WR032FB
Figure 29. Protection Register Program Flowchart and Pseudo Code
Start
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0xC0) ;
/*see note (3) */
Write C0h (3)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
status_register=readFlash (addressToProgram) ;
/* see note (3) */
/* E or G must be toggled*/
Read Status
Register (3)
SR7 = 1
NO
} while (status_register.SR7== 0) ;
YES
SR3 = 0
NO
VPP Invalid
Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
NO
Program
Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
NO
Program to Protected
Block Error (1, 2)
YES
SR4 = 0
YES
SR1 = 0
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
YES
End
}
AI06177b
Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
76/86
M58WR032FT, M58WR032FB
Figure 30. Enhanced Factory Program Flowchart
SETUP PHASE
VERIFY PHASE
Start
Write PD1
Address WA1(1)
Write 30h
Address WA1
Write D0h
Address WA1
Read Status
Register
Read Status
Register
SR0 = 0?
NO
Check SR4, SR3
and SR1 for program,
VPP and Lock Errors
SR7 = 0?
Exit
PROGRAM PHASE
YES
Write PD2
Address WA2(1)
YES
SR0 = 0?
NO
NO
YES
Read Status
Register
Write PD1
Address WA1
SR0 = 0?
Read Status
Register
NO
YES
NO
SR0 = 0?
Write PDn
Address WAn(1)
YES
Write PD2
Address WA2(1)
Read Status
Register
Read Status
Register
SR0 = 0?
NO
YES
SR0 = 0?
NO
Write FFFFh
Address =/ Block WA1
YES
EXIT PHASE
Write PDn
Address WAn(1)
Read Status
Register
Read Status
Register
SR7 = 1?
NO
YES
SR0 = 0?
NO
Check Status
Register for Errors
YES
Write FFFFh
Address =/ Block WA1
End
AI06160
Note: 1. Address can remain Starting Address WA1 or be incremented.
77/86
M58WR032FT, M58WR032FB
Enhanced Factory Program Pseudo Code
efp_command(addressFlow,dataFlow,n)
/* n is the number of data to be programmed */
{
/* setup phase */
writeToFlash(addressFlow[0],0x30);
writeToFlash(addressFlow[0],0xD0);
status_register=readFlash(any_address);
if (status_register.SR7==1){
/*EFP aborted for an error*/
if (status_register.SR4==1) /*program error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block error*/
error_handler();
}
else{
/*Program Phase*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1)
/*Ready for first data*/
for (i=0; i++; i< n){
writeToFlash(addressFlow[i],dataFlow[i]);
/* status register polling*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1);
/* Ready for a new data */
}
writeToFlash(another_block_address,FFFFh);
/* Verify Phase */
for (i=0; i++; i< n){
writeToFlash(addressFlow[i],dataFlow[i]);
/* status register polling*/
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
} while (status_register.SR0==1);
/* Ready for a new data */
}
writeToFlash(another_block_address,FFFFh);
/* exit program phase */
/* Exit Phase */
/* status register polling */
do{
status_register=readFlash(any_address);
/* E or G must be toggled */
} while (status_register.SR7==0);
if (status_register.SR4==1) /*program failure error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block error*/
error_handler();
}
}
78/86
M58WR032FT, M58WR032FB
Figure 31. Quadruple Enhanced Factory Program Flowchart
SETUP PHASE
LOAD PHASE
Start
Write 75h
Address WA1
FIRST
LOAD PHASE
Write PD1
Address WA1
Read Status
Register
Write PD1
Address WA1(1)
Write PD2
Address WA2(2)
Write PD3
Address WA3(2)
NO
SR7 = 0?
YES
Write PD4
Address WA4(2)
EXIT PHASE
Check SR4, SR3
and SR1 for program,
VPP and Lock Errors
PROGRAM AND
VERIFY PHASE
Read Status
Register
Write FFFFh
Address =
/ Block WA1
Exit
NO
SR0 = 0?
YES
Check SR4 for
Programming Errors
End
Last Page?
NO
YES
AI06178b
Note: 1. Address can remain Starting Address WA1 (in which case the next Page is programmed) or can be any address in the same block.
2. The address is only checked for the first Word of each Page as the order to program the Words is fixed, so subsequent Words in
each Page can be written to any address.
79/86
M58WR032FT, M58WR032FB
Quadruple Enhanced Factory Program Pseudo Code
quad_efp_command(addressFlow,dataFlow,n)
/* n is the number of pages to be programmed.*/
{
/* Setup phase */
writeToFlash(addressFlow[0],0x75);
for (i=0; i++; i< n){
/*Data Load Phase*/
/*First Data*/
writeToFlash(addressFlow[i],dataFlow[i,0]);
/*at the first data of the first page, Quad-EFP may be aborted*/
if (First_Page) {
status_register=readFlash(any_address);
if (status_register.SR7==1){
/*EFP aborted for an error*/
if (status_register.SR4==1) /*program error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR1==1) /*program to protect block error*/
error_handler();
}
}
/*2nd data*/
writeToFlash(addressFlow[i],dataFlow[i,1]);
/*3rd data*/
writeToFlash(addressFlow[i],dataFlow[i,2]);
/*4th data*/
writeToFlash(addressFlow[i],dataFlow[i,3]);
/* Program&Verify Phase */
do{
status_register=readFlash(any_address);
/* E or G must be toggled*/
}while (status_register.SR0==1)
}
/* Exit Phase */
writeToFlash(another_block_address,FFFFh);
/* status register polling */
do{
status_register=readFlash(any_address);
/* E or G must be toggled */
} while (status_register.SR7==0);
if (status_register.SR1==1) /*program to protected block error*/
error_handler();
if (status_register.SR3==1) /*VPP invalid error*/
error_handler();
if (status_register.SR4==1) /*program failure error*/
error_handler();
}
}
80/86
M58WR032FT, M58WR032FB
APPENDIX D. COMMAND INTERFACE STATE TABLES
Table 40. Command Interface States - Modify Table, Next State
Current CI State
Ready
WP
Read
setup
Array(2)
(3,4)
(FFh) (10/40h)
Ready
Program
Setup
Lock/CR Setup
Setup
OTP
Busy
Setup
Program
Program Busy
Busy
Program
in Erase
Suspend
Program Suspended
Setup
Ready (error)
Lock/CR Setup
in Erase Suspend
Setup
EFP
Quad
EFP
Program
Busy
Erase Busy
Erase Suspended
Program Busy
Program Suspended
Ready (error)
Erase
Suspended
Erase Busy
Program in
Erase
Erase
Suspend
Suspended
Suspend
Setup
Suspend
Program
Suspended
Program Busy
Suspend
Busy
Read
Electronic
signature,
Read CFI
Query
(90h, 98h)
OTP Busy
Busy
Erase
Command Input
Erase
Confirm
Block
P/E
DWP,
Erase,
Clear
Quad- Resume, Program/ Read
QWP
Bank
EFP
status
Erase
Status
Block
EFP
Setup
Erase
Setup
(3,4)
Unlock Suspend Register Register
Setup
Setup
(5)
(30h)
(35h,
(3,4)
(B0h)
(70h)
confirm,
(75h)
(50h)
56h)
(20h,
EFP
80h)
Confirm
(D0h)
Program
Quad-EFP
Erase Setup EFP Setup
Ready
Setup
Setup
Ready (Lock Error)
Ready
Ready (Lock Error)
Erase Busy
Erase Busy
Erase Suspended
Program Busy in Erase Suspend
Program
Suspend in
Erase
Suspend
Program Busy in Erase Suspend
Program
Busy in
Erase
Suspend
Erase
Suspend
EFP Busy
Program Suspend in Erase Suspend
Erase Suspend (Lock Error)
Ready (error)
Busy
EFP Busy (6)
Verify
EFP Verify (6)
Setup
Quad EFP Busy (6)
Busy
Quad EFP Busy(6)
Program Busy in Erase Suspend
Program Suspend in Erase Suspend
Erase Suspend (Lock Error)
Ready (error)
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data output.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
81/86
M58WR032FT, M58WR032FB
Table 41. Command Interface States - Modify Table, Next Output
Command Input (6)
Current CI State
Read
Array(2)
(FFh)
WP
setup
(3,4)
(10/40h)
DWP,
QWP
Setup
(3,4)
(35h, 56h)
Block
Erase,
Bank
Erase
Setup
(3,4)
(20h,
80h)
Program Setup
Erase Setup
OTP Setup
Program in
Erase Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Lock/CR Setup
in Erase
Suspend
EFP
Setup
(30h)
Erase
Confirm
P/E
Resume,
Quad-EFP
Block
Setup
Unlock
(75h)
confirm,
EFP
Confirm
(D0h)
Program/
Read Status Clear status
Erase
Register
Register
(5)
Suspend
(70h)
(50h)
(B0h)
Status Register
Status Register
OTP Busy
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Status
Register
Ready
Program Busy
Erase Busy
Program/Erase
Program Busy in
Erase Suspend
Program
Suspend in
Erase Suspend
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Electronic
Signature/
CFI
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data output.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI Query mode, depending on the
command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the
bank’s output state.
82/86
M58WR032FT, M58WR032FB
Table 42. Command Interface States - Lock Table, Next State
Command Input
Current CI State
Lock/CR
Setup
Ready
Lock/CR Setup
OTP
Program
Lock/CR
Setup(4)
(60h)
OTP Setup
(4)
(C0h)
Block
Block Lock
Lock-Down
Confirm
Confirm
(01h)
(2Fh)
OTP Setup
Ready (Lock error)
Ready
Illegal
Command
(5)
P/E. C.
Operation
Completed
N/A
Ready (Lock error)
N/A
N/A
OTP Busy
Busy
Ready
Setup
Program Busy
N/A
Busy
Program Busy
Ready
Suspend
Program Suspended
N/A
Setup
Ready (error)
N/A
Erase Busy
Ready
Busy
Suspend
Lock/CR
Setup in
Erase
Suspend
Erase Suspended
Setup
N/A
Program Busy in Erase Suspend
N/A
Busy
Program Busy in Erase Suspend
Erase
Suspended
Suspend
Program Suspend in Erase Suspend
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock error)
Erase Suspend
Setup
EFP
EFP Exit,
Quad EFP
Exit (3)
Ready
Setup
Erase
Program in
Erase
Suspend
Set CR
Confirm
(03h)
Ready (error)
Busy
EFP Busy (2)
Verify
(2)
Setup
QuadEFP
Busy
N/A
Erase Suspend (Lock
error)
EFP Verify
N/A
EFP Verify
Ready
EFP Busy(2)
EFP
Verify(2)
Quad EFP Busy (2)
Quad EFP Busy (2)
N/A
N/A
Ready
N/A
Ready
Quad EFP
Busy(2)
Ready
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, P/E. C. = Program/Erase Controller.
2. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’. EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
4. If the P/E.C. is active, both cycles are ignored.
5. Illegal commands are those not defined in the command set.
83/86
M58WR032FT, M58WR032FB
Table 43. Command Interface States - Lock Table, Next Output
Current CI State
Program Setup
Erase Setup
OTP Setup
Program in Erase
Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Lock/CR Setup in
Erase Suspend
Lock/CR
Setup(3)
(60h)
OTP Setup
(3)
(C0h)
Block Lock
Confirm
(01h)
Command Input
Block
Set CR
Lock-Down
Confirm
Confirm
(03h)
(2Fh)
EFP Exit,
Quad EFP
Exit (2)
Illegal
Command
(4)
Output
Unchanged
Status Register
Status Register
P/E. C.
Operation
Completed
Array
Status Register
Output
Unchanged
OTP Busy
Status Register
Output Unchanged
Array
Output
Unchanged
Output
Unchanged
Ready
Program Busy
EraseBusy
Program/Erase
Program Busy in
Erase Suspend
Program Suspend in
Erase Suspend
Status Register
Output Unchanged
Array
Output
Unchanged
Output
Unchanged
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, P/E. C. = Program/Erase Controller.
2. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
3. If the P/E.C. is active, both cycles are ignored.
4. Illegal commands are those not defined in the command set.
84/86
M58WR032FT, M58WR032FB
REVISION HISTORY
Table 44. Document Revision History
Date
Version
21-Jan-2004
1.0
First Issue
2.0
IDD6 values for Program/Erase in one Bank, Synchronous read in another Bank
changed in Table 18., DC Characteristics - Currents.
Figure 25., Program Suspend & Resume Flowchart and Pseudo Code and Figure
27., Erase Suspend & Resume Flowchart and Pseudo Code modified, notes added.
Small text changes. Data changed at Address Offset 31h in Table 33., Device
Geometry Definition. Small text changes.
Lead Free packages are fully compliant with the ST ECOPACK specification.
Document status promoted from Target Specification to full Datasheet. Alt symbol for
tAVWH and tAVEH removed from Table 22., Write AC Characteristics, Write Enable
Controlled and Table 23., Write AC Characteristics, Chip Enable Controlled.
18-Nov-2004
Revision Details
85/86
M58WR032FT, M58WR032FB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
ECOPACK is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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86/86