STMICROELECTRONICS M74HC07M1R

M54HC07
M74HC07
HEX BUFFER (OPEN DRAIN)
.
.
.
.
.
.
HIGH SPEED
tPD = 5 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 1 µA (MAX.) AT TA = 25 °C
HIGH NOISE IMMUNITY
VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
WIDE OPERATING VOLTAGE RANGE
VCC (OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
54/74LS07
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HC07F1R
M74HC07M1R
M74HC07B1R
M74HC07C1R
PIN CONNECTIONS (top view)
DESCRIPTION
The M54/74HC07 is a high speed CMOS HEX
OPEN DRAIN BUFFER fabricated in silicon gate
2
C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low
power consumption.
The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped
with circuits against static discharge and transient
excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
NC =
No Internal
Connection
February 1993
1/9
M54/M74HC07
TRUTH TABLE
IEC LOGIC SYMBOL
A
Y
L
H
L
Z
Z = High impedance
PIN DESCRIPTION
PIN No
1, 3, 5, 9,
11, 13
2, 4, 6, 8,
10, 12
SYMBOL
1A to 6A
NAME AND FUNCTION
Data Inputs
1Y to 6Y
Data Outputs
7
GND
Ground (0V)
14
VCC
Positive Supply Voltage
LOGIC DIAGRAM (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
ICC
Value
Unit
VCC
VI
Supply Voltage
DC Input Voltage
Parameter
-0.5 to +7
-0.5 to VCC + 0.5
V
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
± 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
or IGND
DC Output Sink Current Per Output Pin
DC VCC or Ground Current
25
± 50
mA
mA
PD
Power Dissipation
500 (*)
mW
Tstg
TL
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9
M54/M74HC07
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
V
VCC
VI
Supply Voltage
Input Voltage
2 to 6
0 to VCC
VO
Output Voltage
0 to VCC
Top
tr, tf
Operating Temperature: M54HC Series
M74HC Series
Input Rise and Fall Time
V
o
-55 to +125
-40 to +85
0 to 1000
VCC = 2 V
VCC = 4.5 V
0 to 500
VCC = 6 V
0 to 400
C
C
ns
o
DC SPECIFICATIONS
Test Conditions
Symbol
VIH
V IL
VOL
II
Parameter
High Level Input
Voltage
Low Level Input
Voltage
Low Level Output
Voltage
Value
TA = 25 oC
54HC and 74HC
VCC
(V)
2.0
Min.
1.5
4.5
3.15
6.0
2.0
4.2
Typ.
Min.
1.5
Max.
3.15
Min.
1.5
V
3.15
4.2
Unit
Max.
4.2
0.5
0.5
0.5
1.35
1.35
1.35
0.0
1.8
0.1
1.8
0.1
1.8
0.1
4.5
6.0
2.0
Max.
-40 to 85 oC -55 to 125 oC
74HC
54HC
V
0.0
0.1
0.1
0.1
6.0
4.5
VI =
IO= 20 µA
VIH
or
V IL IO= 4.0 mA
0.0
0.17
0.1
0.26
0.1
0.33
0.1
0.40
6.0
IO= 5.2 mA
0.18
0.26
0.33
0.40
VI = VCC or GND
±0.1
±1
±1
µA
4.5
V
Input Leakage
Current
6.0
IOZ
Output Leakage
Current
6.0
VI = VIH or VIL
VO = VCC or GND
±0.5
±5
±10
µA
ICC
Quiescent Supply
Current
6.0
VI = VCC or GND
1
10
20
µA
3/9
M54/M74HC07
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions
Symbol
Parameter
tTHL
Output Transition
Time
tPLZ
tPZL
Propagation
Delay Time
Propagation
Delay Time
Value
o
TA = 25 C
54HC and 74HC
Min. Typ. Max.
2.0
30
75
95
110
4.5
6.0
8
7
15
13
19
16
22
19
2.0
ns
10
90
115
135
7
18
23
27
6.0
6
15
20
23
17
90
115
135
7
5
18
15
23
20
27
23
ns
10
10
10
pF
2.0
4.5
6.0
RL = 1KΩ
Unit
4.5
RL = 1KΩ
CIN
Input Capacitance
5
COUT
Output
Capacitance
Power Dissipation
Capacitance
3
CPD (*)
-40 to 85 oC -55 to 125 oC
74HC
54HC
Min. Max. Min. Max.
VCC
(V)
4
ns
pF
pF
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC/6 (per Gate)
4/9
M54/M74HC07
Plastic DIP14 MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
1.39
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
5/9
M54/M74HC07
Ceramic DIP14/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7.0
0.276
D
E
3.3
0.130
0.38
e3
0.015
15.24
0.600
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
1.52
2.54
0.060
0.100
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053C
6/9
M54/M74HC07
SO14 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
8.55
E
5.8
8.75
0.336
6.2
0.228
0.344
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8° (max.)
P013G
7/9
M54/M74HC07
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
8/9
M54/M74HC07
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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