MSC83305 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .. . .. REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE BRANDING 83305 MSC83305 PIN CONNECTION DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Value Unit 17.6 W Device Current* 700 mA Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C 8.5 °C/W PDISS IC VCC Parameter Power Dissipation* (TC ≤ 50˚C) THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 1/5 MSC83305 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 45 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCER IC = 5mA RBE = 10Ω 45 — — V ICBO VCB = 28V — — 0.5 mA hFE VCE = 5V 30 — 300 — IC = 500mA DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT ηc f = 3.0 GHz PIN = 1.59 W VCC = 28 V 4.5 5.0 — W f = 3.0 GHz PIN = 1.59 W VCC = 28 V 30 33 — % GP f = 3.0 GHz PIN = 1.59 W VCC = 28 V 4.5 5.0 — dB COB f = 1 MHz VCB = 28 V — — 7.5 pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY PERCENT POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE COLLECTOR EFFICIENCY vs FREQUENCY 2/5 MSC83305 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN FREQ. ZIN (Ω) ZCL (Ω) 1.0 GHz 1.7 + j 7.2 9.5 + j 15.5 1.7 GHz 2.0 + j 11.2 4.2 + j 6.7 2.0 GHz 2.4 + j 14.0 3.5 + j 2.5 2.3 GHz 3.6 + j 17.4 3.1 − j 1.2 2.7 GHz 6.0 + j 21.0 3.0 − j 3.8 3.0 GHz 9.5 + j 24.0 3.0 − j 7.2 POUT = Saturated VCC = 28V Normalized to 50 ohms TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 3/5 MSC83305 TEST CIRCUIT Ref.: Dwg. No. C125562 RF Amplifier Power Output Test PACKAGE MECHANICAL DATA 4/5 All dimensions are in inches. Frequency 3.0 GHz MSC83305 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5