AM81214-060 .. .. .. .. RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 DESCRIPTION BRANDING 81214-60 PIN CONNECTION The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM81214-060 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 107 W Device Current* 5.0 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 1.4 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-060 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 20mA IE = 0mA 55 — — V BVEBO IE = 2mA IC = 0mA 3.5 — — V BVCER IC = 40mA RBE = 10Ω 55 — — V ICES VBE = 0V VCE = 28V — — 10 mA hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC Value Symbol Test Conditions Typ. Max. Unit POUT ηc f = 1215 — 1400MHz PIN = 12W VCC = 28V 55 63 — W f = 1215 — 1400MHz PIN = 12W VCC = 28V 50 57 — % GP f = 1215 — 1400MHz PIN = 12W VCC = 28V 6.6 7.2 — dB Note: Pul se Widt h Duty Cycle 2/6 Min. = = 1000 µ S 10% AM81214-060 TYPICAL PERFORMANCE RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH 3/6 AM81214-060 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN PIN = 12.0 W VCC = 28 V Z0 = 50 ohms FREQ. ZIN (Ω) Z CL (Ω) L = 1.2 GHz 6.0 + j 10.0 7.0 − j 10.0 M = 1.3 GHz 4.5 + j 11.0 6.0 − j 9.5 H = 1.4 GHz 4.0 + j 9.0 5.0 − j 9.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 12.0 W VCC = 28 V Z0 = 50 ohms 4/6 AM81214-060 TEST CIRCUIT PACKAGE MECHANICAL DATA 5/6 AM81214-060 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6