STMICROELECTRONICS SD1134

SD1134
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
..
..
.
450 - 512 MHz
12.5 VOLTS
EFFICIENCY 55%
COMMON EMITTER
P OUT = 2.0 W MIN. WITH 10.0 dB GAIN
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD1134
BRANDING
SD1134
PIN CONNECTION
DESCRIPTION
The SD1134 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF
communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
16
V
VCES
Collector-Emitter Voltage
36
V
VEBO
Emitter-Base Voltage
4.0
V
Device Current
0.75
A
5
W
IC
PDISS
Power Dissipation
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
35
°C/W
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
November 1992
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SD1134
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCES
IC = 5mA
VBE = 0V
36
—
—
V
BVCEO
IC = 25mA
IB = 0mA
16
—
—
V
BVEBO
IE = 1mA
IC = 0mA
4.0
—
—
V
I CBO
VCB = 15V
IE = 0mA
—
—
1
mA
hFE
VCE = 5V
IC = 100mA
20
—
—
—
DYNAMIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 470 MHz
PIN = 0.20 W
VCC = 12.5 V
2.0
—
—
W
GP
f = 470 MHz
PIN = 0.20 W
VCC = 12.5 V
10.0
—
—
dB
COB
f = 1 MHz
VCB = 12 V
—
6
—
pF
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
POWER OUTPUT vs FREQUENCY
CAPACITANCE vs VOLTAGE
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SD1134
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
450 MHz
ZIN (Ω)
2.7 + j 0.9
Z CL (Ω)
11.5 − j 15.0
470 MHz
2.6 + j 1.3
12.2 − j 13.5
512 MHz
2.2 + j 1.7
12.7 − j 13.0
FREQ.
TEST CIRCUIT
C1
: 0.8-10pF, Voltronics AJ10
C2,
: ATC 100-B, 7.5pF, Chip Capacitor
C3, C4 : ATC 100-B, 24pF, Chip Capacitor
C5
: ATC 100-B, 5.6pF, Chip Capacitor
C6
: 0.6-6pF, Johanson
C7
: ATC 100-B, 200pF, Chip Capacitor
C8
: 5.6µF Electrolytic
C9
C10
L1
R1
RFC
:
:
:
:
:
0.1µF, Disc-Ceramic
0.01µF, Disc-Ceramic
2 Turns #22 Enameled 0.1” I.D.
360Ω , 1/4” Wide
2 Turns in Ferroxcube VK 200/19-4B
Board Material: 3M-K-6098 1/16” Thick
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SD1134
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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