STMICROELECTRONICS TH416

SD1729 (TH416)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
..
..
..
.
OPTIMIZED FOR SSB
30 MHz
28 VOLTS
IMD −30 dB
COMMON EMITTER
GOLD METALLIZATION
P OUT = 130 W PEP WITH 12 dB GAIN
.500 4LFL (M174)
epoxy sealed
ORDER CODE
SD1729
BRANDING
TH416
PIN CONNECTION
DESCRIPTION
The SD1729 is a Class AB 28 V epitaxial silicon
NPN planar transistor designed primarily for SSB
communications. This device utilizes emitter ballasting to achieve extreme ruggedness under
severe operating conditions.
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
4.0
V
Device Current
12
A
Power Dissipation
175
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
1.0
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
November 1992
Junction-Case Thermal Resistance
1/4
SD1729 (TH416)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCES
IC = 50 mA
VBE = 0 V
70
—
—
V
BVCEO
IC = 100 mA
IB = 0 mA
35
—
—
V
BVEBO
IE = 20 mA
IC = 0 mA
4.0
—
—
V
ICES
VCE = 35 V
IE = 0 mA
—
—
20
mA
hFE
VCE = 5 V
IC = 7 A
18
—
50
—
DYNAMIC
Symbol
Value
Test Conditions
Typ.
Max.
Unit
f = 30 MHz
VCE = 28 V
ICQ = 150 mA
130
—
—
W
GP
POUT = 130 W PEP
VCE = 28 V
ICQ = 150 mA
12
—
—
dB
IMD*
ηc
POUT = 130 W PEP
VCE = 28 V
ICQ = 150 mA
—
—
−30
dBc
POUT = 130 W PEP
VCE = 28 V
ICQ = 150 mA
37
—
—
%
COB
f = 1 MHz
VCB = 28 V
—
220
—
pF
POUT
Note:
* f1
=
30.00 MHz, f2
=
30. 001 MHz
TYPICAL PERFORMANCE
SAFE OPERATING AREA
2/4
Min.
SD1729 (TH416)
TYPICAL PERFORMANCE (cont’d)
INTERMODULATION DISTORTION vs
POWER OUTPUT
TEST CIRCUIT
C1
C2
C3, C4
C5
C6
C7
C8
C9
C10, C11
:
:
:
:
:
:
:
:
:
20 - 120pF
50 - 300pF
3.9nF
100nF
2.2µF
2 x 180pF in Parallel
3 x 56pF and 33pF in Parallel
4 x 56pF and 68pF in Parallel
360pF
L1
:
L2
:
L3, L5 :
L4
:
R1
R2
R3
88nF
22µH Choke Coil
80nF
Ferroxcube Choke Coil
: 0.55Ω
: 27Ω
: 4.7Ω
3/4
SD1729 (TH416)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
4/4