STMICROELECTRONICS SD1489

SD1489
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
..
..
..
.
..
.
470 - 860 MHz
28 VOLTS
CLASS AB PUSH PULL
DESIGNED FOR HIGH POWER LINEAR
OPERATION
HIGH SATURATED POWER CAPABILITY
GOLD METALLIZATION
DIFFUSED EMITTER BALLAST
RESISTORS
COMMON EMITTER CONFIGURATION
INTERNAL INPUT MATCHING
P OUT = 50 W MIN. WITH 6.5 dB GAIN
.438 x .450 2LFL (M173)
epoxy sealed
ORDER CODE
SD1489
BRANDING
SD1489
PIN CONNECTION
DESCRIPTION
The SD1489 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
UHF and Band IV, V television transmitters and
transposers.
1. Collector
2. Base
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
8
A
Power Dissipation
175
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
1.0
°C/W
IC
PDISS
Device Current
THERMAL DATA
RTH(j-c)
November 1992
Junction-Case Thermal Resistance
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SD1489
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 50mA
IE = 0mA
45
—
—
V
BVCER
IC = 20mA
RBE = 10Ω
40
—
—
V
BVCEO
IC = 200mA
IB = 0mA
30
—
—
V
BVEBO
IE = 10mA
IC = 0mA
3.0
—
—
V
I CEO
VCE = 28V
IE = 0mA
—
—
5
mA
hFE
VCE = 5V
IC = 3A
10
—
80
—
DYNAMIC
Symbol
Min.
Typ.
Max.
Unit
POUT
f = 860 MHz
VCE = 28 V
ICQ = 2 x 250 mA
50
—
—
W
GP
f = 860 MHz
VCE = 28 V
ICQ = 2 x 250 mA
6.8
—
—
dB
ηC
f = 860 MHz
VCE = 28 V
ICQ = 2 x 250 mA
—
45
—
%
f = 1 MHz
VCB = 28 V
—
70
—
pF
COB
Note:
2/5
Value
Test Conditions
Pulse W idth
=
10 µ Sec, Duty Cycle
=
1%
SD1489
TYPICAL PERFORMANCE
OUTPUT POWER vs POWER INPUT
BROADBAND POWER GAIN vs FREQUENCY
INTERMODULATION DISTORTION
vs OUTPUT POWER
COLLECTOR EFFICIENCY vs FREQUENCY
THERMAL RESISTANCE vs CASE
TEMPERATURE
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SD1489
TEST CIRCUIT
:
:
:
:
:
:
:
:
:
:
1.5pF ATC 100A
100pF ATC 100A
.5 - 4.5pF Airtronic Adjustable
2.7pF ATC 100A
10pF ATC 100A
18pF ATC 100A
6.8pF ATC 100A
1.5pF ATC 100A + 1.8pF ATC 100A
100pF ATC 100A
120pF ATC 100A
L
L1
L2
L3
L4
L5
L6
L7
L8
L9
:
:
:
:
:
:
:
:
:
:
Cd1
Cd2
Cd3
Cd4
Cd5
Cd6
Cd7
:
:
:
:
:
:
:
100pF ATC 100A
47pF AATC 100B + 1000pF ATC 100B
500µF 25V
100pF ATC 100A
22µF 35V
1000pF ATC 100B
47µF 63V
R1
R2
: 150 Ω 1/4 W
: 51 Ω 1/4W
S1, S’1 : 10 Turns of .35mm Wire on 2mm Diameter
S2
: 9 Turns of .35mm Wire on R1
S3
: 2 Turns of .8mm Wire on 4mm Diameter
S4
: 5 Turns of .8mm Wire on R2
Board:
TEST CIRCUIT LAYOUT
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Coaxial Cable Zo = 50Ω Length λ/4 at 680 MHz
Printed Transmissiion Line Zo = 25Ω Length 12mm
Printed Transmission Line Zo = 25Ω Length 12mm
Printed Transmission Line Zo = 25Ω Length 10mm
Printed Transmission Line Zo = 25Ω Length 9mm
Printed Transmission Line Zo = 25Ω Length 5.5mm
Printed Transmission Line Zo = 25Ω Length 6mm
Printed Transmission Line Zo = 25Ω Length 14.5mm
Printed Transmission Line Zo = 25Ω Length 12mm
Printed Transmission Line Zo = 25Ω Length 7mm
C1
C2, C’2
C3, C12
C4, C5
C6
C7
C8
C9
C10, C’10
C11, C’11
Er
= 2.55, .020” Thick
SD1489
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0173
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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