STMICROELECTRONICS SD1728

SD1728 (TH430)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
..
..
..
.
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
IMD − 30 dB
GOLD METALLIZATION
COMMON EMITTER
P OUT = 250 W PEP WITH 14.5 dB GAIN
.550 4LFL (M177)
epoxy sealed
ORDER CODE
SD1728
BRANDING
TH430
PIN CONNECTION
DESCRIPTION
The SD1728 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
Device Current
40
A
Power Dissipation
330
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
0.4
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
November 1992
Junction-Case Thermal Resistance
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SD1728 (TH430)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCES
I C = 200mA
VBE = 0V
110
—
—
V
BVCEO
I C = 200mA
IB = 0mA
55
—
—
V
BVEBO
I E = 20mA
IC = 0mA
4.0
—
—
V
I CEO
VCE = 30V
IE = 0mA
—
—
10
mA
ICES
VCE = 60V
IE = 0mA
—
—
10
mA
hFE
VCE = 6V
IC = 10A
15
—
45
—
DYNAMIC
Symbol
Min.
Typ.
Max.
Unit
f = 30 MHz
VCC = 50 V
ICQ = 150 mA
250
—
—
W
G P*
POUT = 250 W PEP
VCC = 50 V
ICQ = 150 mA
14.5
—
—
dB
IMD*
η c*
POUT = 250 W PEP
VCC = 50 V
ICQ = 150 mA
—
—
−30
dBc
POUT = 250 W PEP
VCC = 50 V
ICQ = 150 mA
37
—
—
%
COB
f = 1 MHz
VCB = 50 V
—
—
360
pF
POUT
Note:
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Value
Test Conditions
* Tw o Tone Method; f1 = 30.00 MHz; f 2 = 30.001 MHz
In Cl ass C: G P Mi n. 13.5 dB, Effici ency 65%@ 30MHz
G P Mi n. 10 dB, Eff ici ency 57%@ 70MHz
SD1728 (TH430)
TYPICAL PERFORMANCE
CLASS AB
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER OUTPUT PEP
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
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SD1728 (TH430)
TYPICAL PERFORMANCE (cont’d)
POWER GAIN vs POWER OUTPUT PEP
TEST CIRCUIT SSB - CLASS AB - 30 MHz
C1
:
C2
:
C3, C6
:
C4, C5,
C7
:
C8
:
C9
:
C10, C14 :
C11, C13,
C15
:
C12
:
C16
:
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Arco 429
Arco 4615
Arco 4213
Arco 4611
Arco 427
470µF, 40V
100nF, 63V
1nF
10nF
220µF, 63V
L1
L2
L3
L4
L5
L6
L7
:
:
:
:
:
:
:
5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm
2 Turns, Diameter 12mm, 2mm Wire, Length 8mm
1 Turn, Diameter 12mm, 2mm Wire, Length 5mm
Hair Pin Copper Foil 20 x 5mm
1 Turn, Diameter 12mm, 2mm Wire, Length 8mm
5 Turns, Diameter 8mm, 1.3mm Wire, Length 18mm
3 Turns, Diameter 8mm, 1.3mm Wire, Length 15mm
R
: 0.25Ω*
* 4 Resistors 1Ω 0.5W in parallel
SD1728 (TH430)
TYPICAL PERFORMANCE
CLASS C
F = 30 MHz
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY
vs POWER OUTPUT
CLASS C
POWER OUTPUT vs POWER INPUT
F = 70 MHz
COLLECTOR EFFICIENCY
vs POWER OUTPUT
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SD1728 (TH430)
TYPICAL PERFORMANCE (cont’d)
COLLECTOR BASE CAPACITANCE vs COLLECTOR BASE VOLTAGE
DC SAFE OPERATING AREA
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SD1728 (TH430)
IMPEDANCE DATA (TYPICAL)
POUT = 250 W PEP
VCC = 50 V
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SD1728 (TH430)
BIAS CIRCUIT
MOUNTING CIRCUIT
Parts list on test circuit drawing
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SD1728 (TH430)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0177 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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