SD1888-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .. .. .. . 1.65 GHz 28 VOLTS EFFICIENCY 50% MIN. CLASS C OPERATION COMMON BASE INPUT/OUTPUT MATCHING P OUT = 24 W MIN. WITH 9.0 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1888-03 BRANDING 1888-3 PIN CONNECTION DESCRIPTION The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1888-03 is packaged in a cost-effective epoxy sealed housing 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V Device Current 2.6 A Power Dissipation 50 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 3.5 °C/W THERMAL DATA RTH(j-c) July 1993 Junction-Case Thermal Resistance 1/4 SD1888-03 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 6 mA IE = 0 mA 45 — — V BVCEO IC = 6 mA IB = 0 mA 12 — — V BVEBO IE = 6 mA IC = 0 mA 3.0 — — V hFE VCE = 5 V IC = 1.2 A 15 — 150 — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT f = 1.65 GHz PIN = 3.0 W VCE = 28 V 24 — — W GP ηc f = 1.65 GHz PIN = 3.0 W VCE = 28 V 9.0 — — dB f = 1.65 GHz PIN = 3.0 W VCE = 28 V 50 — — % TYPICAL PERFORMANCE POWER OUTPUT & EFFICIENCY vs POWER INPUT 2/4 Min. SD1888-03 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN 1600 MHz ZIN (Ω) 9.0 + j 14.0 11.0 + j 2.0 1650 MHz 11.5 + j 12.0 9.0 + j 4.0 1700 MHz 23.0 + j 8.0 8.0 + j 5.5 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL (Ω) ZCL TEST CIRCUIT C1 : 1500pF Feedtrhu Capacitor Erie C2, C3 : 0.4 - 2.5pF Trim Capacitor Johanson Gigatrim C4 : 100pF ATC Chip Capacitor L1, L2 : RF Chokes; 3 Turns #22 Wire .100” Diameter 3/4 SD1888-03 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0170 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4