SMTHDTxx Application Specific Discretes TRISIL TM A.S.D. DISCRETE SOLUTION FOR ISDN PROTECTION FEATURES UNDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT: IPP = 75 A , 10/1000 µs. HOLDING CURRENT = 150mA. BREAKDOWN VOLTAGE: SMTHDT58 = 58V. SMTHDT80 = 80V. SMTHDT120 = 120V. PACKAGES: SMTHDTxx = SURFACE MOUNT PACKAGE. DESCRIPTION: TRIBALANCED PROTECTION SMC FUNCTIONAL DIAGRAM. Dedicated protection devices for ISDN LINE CARD and high speed data telecom lines. Used with the recommended configuration using 3 components, they will provide = - Dual bidirectionnal protection, with fixed breakdown voltage in both common and differential modes. - Low capacitancesfrom lines to ground. - Very good capacitance balance : ∆C= 30 pF. A K ABSOLUTE RATINGS (limiting values) (-40°C ≤ Tamb ≤ +85°C) Symbol IPP Parameter Peak pulse current 10/1000 µs 8/20 µs Value 75 150 Unit A ITSM Non repetitive surge peak on-state current tp = 20 ms 30 A di/dt Critical rate of rise of on-state current Non repetitive 100 A/µs dv/dt Critical rate of rise of off-state voltage 67% VBR 5 KV/µs Tstg Tj Storage and operating junction temperature range - 40 to + 150 + 150 °C °C Value 200 Unit °C/W THERMAL RESISTANCES Symbol Rth (j-l) Parameter Junction-leads Thermal Resistance April 1999 - Ed: 1A SMC 1/6 SMTHDTxx Symbol VRM Parameter I Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IF VBO VBR IH Holding current VT On-state voltage VF Forward Voltage Drop IBO Breakover current I RM 1mA IH IPP Peak pulse current IT VF Forward Voltage Drop V RM VT VF V I BO I PP PARAMETERS RELATED TO THE DIODE. Parameter VF Test conditions IF = 5A, TP = 500 µs Value 5 Unit V PARAMETERS RELATED TO THE PROTECTION TRISIL. Types IR @ VRM max VBR @ IR min VBO max IBO min max IH VT C min max max note1 note1 note1 note1 note2 note3 µA V V mA V mA mA mA V pF SMTHDT58 10 56 58 1 80 150 800 150 5 400 SMTHDT80 10 68 80 1 120 150 800 150 5 250 SMTHDT120 10 102 120 1 180 150 800 150 5 200 All parameters tested at 25 °C, except where indicated. Note 1 : See the reference test circuit for IH, IBO and VBO parameters. Note 2 : Square pulse Tp = 500 µs - IT = 5A. Note 3 : VR = 1V, F = 1MHz. 2/6 SMTHDTxx REFERENCE TEST CIRCUIT FOR IH, IBO and VBO parameters : Tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout V BO D.U.T IBO , IH measure measure Transformer 220V/ 800V 5A TEST PROCEDURE : Pulse Test duration (Tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBR ≤ 150 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBR ≥ 150 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST. 25 Switch 15 A D.U.T Vbat = 48V 20 220nF 50 F Vp = 1KV K Surge Generator 10/700 sec Vp =1KV / Ipp = 25A This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. This test can be performed if the reference test circuit can’t be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 25A , 10/700 µs. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max. 3/6 SMTHDTxx APPLICATION NOTE ISDN PROTECTION. LINE A LINE A A CA GND C GND 3.TPUxx or 3.SMTHDTxx CB B LINE B LINE B TRIPOLE PROTECTION FULL BALANCED PROTECTION RECOMMENDED CONFIGURATION FOR TRIBALANCED PROTECTION MODE. CAPACITANCE CHARACTERISTICS Type 4/6 CONFIGURATION CA pF CB pF ∆C pF LINE A LINE B Max Max Max SMTHDT58 48 0 80 60 30 SMTHDT80 56 0 70 50 30 SMTHDT120 110 0 70 50 30 SMTHDTxx APPLICATION NOTE Discrete ISDN Protection solution LINE A 3 TPUxx or 3 SMTHDTxx TRANSFORMER A GND B LINE B EQUIVALENT PROTECTION FUNCTION U Interface Protection S Interface Protection A A R or PTC GND R or PTC B TPUxx GND R or PTC TPUxx A R or PTC TPUxx B R or PTC B GND R or PTC This topology assumes the same breakdown voltage level in positive and negative for differential or common mode surge. 5/6 SMTHDTxx MARKING ORDER CODE SM THDT 80 Surface Mount Unidirectionnal Package Type Marking SMC SMTHDT58 SMTHDT80 SMTHDT120 W01 W03 W05 Breakdown Voltage PACKAGE MECHANICAL DATA SMC REF. E1 D E A1 A2 C E2 L b A1 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 FOOTPRINT DIMENSIONS (in millimeters) 3.3 2.0 4.2 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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