SMTHBT200 TRISILTM FOR LINE CARD PROTECTION FEATURES BIDIRECTIONAL CROWBAR PROTECTION REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 µs) HOLDING CURRENT: IH = 150 mA BREAKDOWN VOLTAGE : 200V min BREAKOVER VOLTAGE : 265V max SMC DESCRIPTION This protection device has been especially designed to protect subscriber line cards using SLICS without integrated ring generators. The SMTHBT200 device protects ring generator relays against transient SCHEMATIC DIAGRAM INACCORDANCE WITHTHEFOLLOWINGSTANDARDS : 10/700 µs 5/310 µs - VDE 0433: 10/700 µs 5/310 µs - VDE 0878: 1.2/50 µs 1/20 µs - FCC Part 68: 2/10 µs BELLCORE TR-NWT-001089: 2/10 µs - BELLCORE TR-NWT-000974: 10/1000 µs 10/1000 µs - CCITT K20: August 1999 - Ed : 3A 4 kV 100 A 4 kV 100 A 4 kV 100 A 2.5 kV 500 A 1 kV 100 A 1/6 SMTHBT200 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-I) Junction to leads 10 °C/W Rth(j-a) Junction to ambient on printed circuit (with standard footprint dimensions) 75 °C/W Value Unit Peak pulse current: 10/1000 µs (open circuit voltage waveform 10/1000 µs) 8/20 µs (open circuit voltage waveform 4kV 1.2/50 µs) 100 250 A A ITSM Non repetitive surge peak on-state current tp = 20ms 55 A dV/dt Critical rate of rise of off-state voltage VRM 5 KV/µs 260 °C - 55 to + 150 150 °C °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C, unless otherwise specified) Symbol Ipp Parameter TL Maximum lead temperature for soldering during 10s Tstg Tj Storage temperature range Maximum junction temperature Note 1: Pulse waveform 10 / 1000 µs 8 / 20 µs 5 / 310 µs 1 / 20 µs 2 / 10 µs 2/6 tr = 10 µs tr = 8 µs tr = 5 µs tr = 1 µs tr = 2 µs % IPP tp = 1000 µs tp = 20 µs tp = 310 µs tp = 20 µs tp = 10 µs 100 50 0 tr tp SMTHBT200 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage IRM VR Leakage current at stand-off voltage VBR Breakdown voltage VBO IH Breakover voltage Holding current IBO Breakover current IPP Peak pulse current Capacitance C Continuous Reverse voltage STATIC PARAMETERS Type SMTHBT200 IRM @ VRM max. IR @ VR max. note 1 @ I BO min. note 2 VBO max. max. IH min. note 3 C max. note 4 µA V µA V V mA mA mA pF 10 180 50 200 265 150 800 150 150 Note 2 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. 3/6 SMTHBT200 TEST CIRCUIT 1 FOR I BO and V BO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout D.U.T IBO measure V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R D.U.T. - VP VBAT = - 48 V Surge generator This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. 4/6 SMTHBT200 Fig 1 : Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 °C). Fig 2 : On-state voltage versus on-state current (typical values). I T (A) ITSM(A) 50 70 F=50Hz 60 Tj=25°C 50 10 40 30 20 10 t(s) 0 1E-2 1E-1 VT (V) 1E+0 1E+1 1E+2 1E+3 Fig 3 : Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25°C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 Fig 4 : Variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)(°CW) 100 10 tp(s) Tj(°C) 40 60 80 100 120 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig 5 : Relative variation of junction capacitance versus reverse voltage applied (typical values). Note : For VBR upper than 62 V, the curve can be extrapolated (dotted line) C[VR]/C[VR=1V] 1.0 F=1MHz 0.5 0.2 VR(V) 0.1 1 10 100 300 5/6 SMTHBT200 PACKAGE MECHANICAL DATA SMC (Plastic) DIMENSIONS REF. E1 D E A1 A2 C L E2 b FOOT PRINT (in millimeters) Millimeters Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 Packaging : tape and reel 3.3 MARKING Package SMC 2.0 4.2 Inches Type SMTHBT200 Marking WO4 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6