STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID STP20N10 100 V < 0.12 Ω 20 A ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 20 A ID Drain Current (continuous) at T c = 100 oC 14 A Drain Current (pulsed) 80 A Total Dissipation at Tc = 25 C 105 W Derating Factor 0.7 W/o C ID M(•) P tot T stg Tj o Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area December 1996 1/9 STP20N10 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 1.43 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 20 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 60 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 15 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 14 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 100 Unit V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V ID = 10 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.09 0.12 Ω 20 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 10 A VG S = 0 Min. Typ. 7 12 800 200 40 Max. Unit S 1100 300 60 pF pF pF STP20N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Typ. Max. Unit 35 110 ns ns Turn-on Time Rise Time V DD = 30 V ID = 3 A VGS = 10 V R G = 50 Ω (see test circuit, figure 3) 25 75 Turn-on Current Slope V DD = 80 V ID = 20 A VGS = 10 V R G = 50 Ω (see test circuit, figure 5) 300 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V ID = 20 A V GS = 10 V A/µs 30 9 11 45 nC nC nC Typ. Max. Unit 70 55 130 100 80 185 ns ns ns Typ. Max. Unit 20 80 A A 1.6 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 80 V ID = 20 A VGS = 10 V R G = 50 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 20 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A di/dt = 100 A/µs V DD = 20 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 125 ns 0.44 µC 7 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/9 STP20N10 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STP20N10 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STP20N10 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Fig. 2: Unclamped Inductive Waveforms STP20N10 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STP20N10 TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 8/9 STP20N10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 9/9