STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW12NA50 ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 500 V < 0.6 Ω 11.6 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 11.6 A ID Drain Current (continuous) at T c = 100 oC 7.3 A Drain Current (pulsed) 46.4 A Total Dissipation at Tc = 25 C 170 W Derating Factor 1.36 W/o C ID M(•) P tot T stg Tj o Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area December 1995 1/9 STW12NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 0.73 30 0.1 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 11.6 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 670 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 26.5 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 7.3 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 Unit V T c = 125 oC V GS = ± 30 V 25 250 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V ID = 6 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 0.5 0.6 Ω 12 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 6 A VG S = 0 Min. Typ. 6 9 1750 250 80 Max. Unit S 2500 370 130 pF pF pF STW12NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Typ. Max. Unit 28 45 ns ns Turn-on Time Rise Time V DD = 250 V I D = 6 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) 20 32 Turn-on Current Slope V DD = 400 V I D = 12 A VGS = 10 V R G = 47 Ω (see test circuit, figure 5) 190 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V I D = 12 A VG S = 10 V A/µs 80 12 37 110 nC nC nC Typ. Max. Unit 16 12 30 22 18 42 ns ns ns Typ. Max. Unit 11.6 46.4 A A 1.6 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 400 V I D = 12 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 600 ns 10.2 µC 34 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/9 STW12NA50 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STW12NA50 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STW12NA50 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Fig. 2: Unclamped Inductive Waveforms STW12NA50 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STW12NA50 TO-247 MECHANICAL DATA mm DIM. MIN. A TYP. 4.7 A1 inch MAX. MIN. 5.3 0.185 TYP. MAX. 0.208 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 ØP 3.5 3.71 0.137 0.146 A2 A1 A C 0.613 D b L1 b1 Q L b2 E e ø 8/9 STW12NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 9/9