STMICROELECTRONICS STPR320

STPR320

ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
IF(AV)
3A
VRRM
200 V
Tj (max)
150°C
VF (max)
0.99 V
trr (max)
30 ns
FEATURES
SUITED FOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGH SURGE CURRENT CAPABILITY
F126
(JEDEC DO-204AC)
DESCRIPTION
Low cost single chip rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in F126, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM (limiting values)
Symbol
Parameter
Value
Unit
200
V
VRRM
Repetitive peak reverse voltage
IF(AV)
Average forward current
Tl=60°C
δ = 0.5
3
A
IFSM
Surge non repetitive forward current
tp=10ms
sinusoidal
30
A
Tstg
Storage temperature range
- 65 to + 150
°C
150
°C
Tj
Maximum operating junction temperature
October 1999- Ed:1A
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STPR320
THERMAL RESISTANCE
Symbol
Rth (j-l)
Parameter
Value
Unit
25
°C/W
Junction lead (L=5mm)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR *
VF **
Parameters
Test conditions
Reverse leakage
current
Tj = 25°C
Min.
VR = VRRM
Tj = 100°C
Forward voltage
drop
Typ.
Tj = 125°C
IF = 3 A
0.2
0.8
Tj = 125°C
IF = 6 A
0.95
Tj = 25°C
IF = 6 A
Max.
Unit
10
µA
0.5
0.99
mA
V
1.20
1.25
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.070 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
Test conditions
Min.
Typ.
Max.
Unit
trr
Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
tfr
Tj = 25°C
IF = 3A
VFR = 1.1 x VF max
dIF/dt = 50 A/µs
20
ns
VFP
Tj = 25°C
IF = 3A
dIF/dt = 50 A/µs
3
V
Fig. 1 : Average forward power dissipation versus
average forward current.
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30
Fig. 2 : Peak current versus form factor.
ns
STPR320
Fig. 3: Average current versus ambient
temperature(δ : 0.5)
* circuit board e (Cu) = 35µm, S (cu) = 12mm2
L(LEADS ) = 20mm
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values).
IF(av) (A)
IM(A)
3.5
20
T
=0.5
18
3.0
IM
16
Rth(j-a)=Rth(j-l)
2.5
14
=tp/T
tp
=0.5
12
2.0
Tl=25 o C
10
1.5
8
6
1.0
o
0.5
o
Tl=60 C
4
Rth( j-a)=90 C/w *
2
0.0
0
25
50
75
100
125
0
0.001
150
Fig. 5: Relative variation of thermal transient
impedance junction to case versus pulse duration.
t(s)
0.01
0.1
1
10
Fig. 6: Forward voltage drop versus forward
current (maximum values).
K=Zth(j-l)/Rth(j-l)
1
= 0.5
= 0.2
0.1
= 0.1
T
SINGLE PULSE
0.01
0.001
tp(s)
0.01
0.1
=tp/T
tp
1
10
Fig 7: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 8: Recovery charges versus dIF/dt.
H
3/5
STPR320
Fig. 9: Peak reverse current versus dIF/dt.
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Fig. 10: Dynamic parameters versus junction
temperature .
STPR320
PACKAGE MECHANICAL DATA
F126
C
C
A
D
D
B
DIMENSIONS
REF.
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
6.05
6.20
6.35
0.238
0.244
0.250
B
2.95
3.00
3.05
0.116
0.118
0.120
C
26
31
1.024
D
0.76
0.86
0.030
0.81
1.220
0.032
0.034
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPR320
STPR320
F126
0.4g
1000
Ammopack
Cooling method : by conduction (C)
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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