BYW80PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in Isolated TO220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isolated TO220AC (Plastic) BYW80PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) Parameter RMS forward current Value Unit 20 A IF(AV) Average forward current δ = 0.5 Tc=110°C 10 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 100 A Tstg Tj Storage and junction temperature range - 65 to + 150 - 65 to + 150 °C °C Value Unit 200 V Symbol VRRM October 1999 Parameter Repetitive peak reverse voltage Ed : 2C 1/5 BYW80PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit 3.5 °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Test Conditions T j = 25°C Min. Typ. VR = VRRM T j = 100°C VF ** Max. Unit 10 µA 1 mA V T j = 125°C IF = 7 A 0.85 T j = 125°C IF = 15 A 1.05 T j = 25°C IF = 15 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 25 IF = 1A VR = 30V dIF/dt = -50A/µs 35 Unit ns tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj = 25°C IF = 1A tr = 10 ns 2 V 2/5 BYW80PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 14 200 =0.5 =0.2 =0.1 12 Fig.2 : Peak current versus form factor. =1 IM(A) T 175 =0.05 150 10 IM P=10W 125 8 =tp/T tp 100 6 T P=5W 75 4 50 2 IF(av)(A) 0 0 1 2 3 4 5 6 7 =tp/T tp 8 9 10 11 12 13 14 Fig.3 : Forward voltage drop versus forward current (maximum values). 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) 1.8 1.6 P=15W 25 K Zth(j-c) (tp. ) K = Rth(j-c) Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. 100 90 80 70 60 50 40 30 20 10 0 IM(A) 1.0E-02 1.0E-01 Fig.6 : Average current temperature. (duty cycle : 0.5) versus tp 1. 0E+00 ambient IF(av)(A) Tc=25 oC Tc=70 o C IM 0.001 =tp/T tp(s) 0.1 Tc=110 o C t t(s) =0.5 0.01 0.1 1 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T =tp/T 20 tp 40 Tamb(o C) 60 80 100 120 140 160 3/5 BYW80PI-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) Fig.8 : Recovery charges versus dIF/dt. QRR(nC) 90% CONFIDENCE Tj=125 o C VR(V) IF=IF(av) dIF/dt(A/us) Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. O I RM(A) QRR;IRM[Tj]/QRR;IRM[Tj=125 C] 90% CONFIDENCE Tj=125 o C IF=IF(av) IRM QRR dIF/dt(A/us) 4/5 Tj( o C) BYW80PI-200 PACKAGE MECHANICAL DATA TO220AC (isolated) C B DIMENSIONS b2 I REF. L F A a1 l2 a2 b1 c1 c2 e A a1 a2 B b1 b2 C c1 c2 e F I L l2 Millimeters Inches Min. Max. Min. Max. 14.23 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 0.560 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Cooling method : C Marking : Type number Weight : 1.86 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5