STMICROELECTRONICS STTA206S

STTA206S
®
TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
2A
VRRM
600V
trr (typ)
20ns
VF (max)
1.5V
A
K
FEATURES AND BENEFITS
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
SURFACE MOUNT DEVICE
SMC
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH "A" family drastically cuts losses
in both the diode and the associated switching
IGBT or MOSFET in all "Freewheel Mode"
operations and is particulary suitable and efficient
in Motor Control Freewheel applications and in
Booster diode applications in Power Factor Control
circuitries.
Packaged in SMC surface mount envelope, these
600V devices are particularly intended for use on
240V domestic mains.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
VRSM
Non repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
8
A
Repetitive peak forward current (tp = 5 µs, f = 5kHz)
50
A
Maximum operating junction temperature
125
°C
- 65 to + 150
°C
IFRM
Tj
Tstg
Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 2D
1/8
STTA206S
THERMAL AND POWER DATA
Symbol
Rth(j-I)
P1
Pmax
Parameter
Conditions
Value
Unit
21
°C/W
Junction to lead
Conduction power dissipation
(see fig. 2)
IF(AV) = 1.5A δ = 0.5
Tlead= 72°C
2.5
W
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Tlead= 67°C
2.8
W
STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2)
Symbol
VF
*
IR
**
Parameter
Test Conditions
Forward voltage drop
Reverse leakage current
IF = 2A
VR = 0.8
x VRRM
Min
Typ
Max
Unit
Tj = 25°C
Tj = 125°C
1.75
1.5
V
1.1
Tj = 25°C
Tj = 125°C
20
1200
µA
400
Typ
Max
Unit
Test pulses widths : * tp = 380 µs, duty cycle < 2%
** tp = 5 ms , duty cycle < 2%
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING (see Fig. 3)
Symbol
trr
IRM
S factor
Parameter
Reverse
recovery time
Maximum
recovery current
Softness factor
Test Conditions
Min
ns
Tj = 25°C
IF = 0.5 A IR = 1A
Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR = 30V
Tj = 125°C VR = 400V
dIF/dt = -16 A/µs
dIF/dt = -50 A/µs
Tj = 125°C VR = 400V
dIF/dt = -50 A/µs
20
50
IF = 2A
A
1.2
2.0
IF = 2A
TBD
-
TURN-ON SWITCHING (see Fig.8)
Symbol
2/8
Parameter
tfr
Forward
recovery time
VFp
Peak forward
voltage
Test Conditions
Tj = 25°C
IF = 1 A
dIF/dt = 8 A/µs
measured at, 1.1 × VF max
Min
Typ
Max
Unit
500
ns
10
V
STTA206S
APPLICATION DATA
The TURBOSWITCHTM
"A" is especially
designed to provide the lowest overall power
losses in any "Freewheel Mode" application (see
fig. 1) considering both the diode and the
companion transistor, thus optimizing the overall
performance in the end application.
The way of calculating the power losses is given
below :
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
SWITCHING
LOSSES
in the diode
P1 Watts
(Fig. 2)
P2 Watts
(Fig. 2)
OFF : P3 Watts
ON : P4 Watts
(Fig. 3 & 4)
SWITCHING
LOSSES
in the transistor
due to the diode
P2 Watts
(Fig. 3)
Fig. 1 : "FREEWHEEL" MODE
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH "A"
IL
VR
t
T
F = 1/T
= t/T
LOAD
3/8
STTA206S
APPLICATION DATA (Cont’d)
Fig. 2 : STATIC CHARACTERISTICS
Conduction losses :
I
P1 = Vt0 x IF(AV) + Rd x IF2(RMS)
IF
with
Rd
Vt0 = 1.15 V
Rd = 0.175 Ohm
(Max values at 125°C)
VR
V
IR
VF
V tO
Reverse losses :
P2 = VR x IR x (1 - δ)
Fig. 3 : TURN-OFF CHARACTERISTICS
Turn-on losses :
(in the transistor, due to the diode)
V
IL
VR × IRM 2 × (3 + 2 × S) × F
6 x dIF ⁄ dt
VR × IRM × IL × (S + 2) × F
+
2 × dIF ⁄ dt
TRANSISTOR
I
P5 =
t
I
dI F /dt
DIODE
ta tb
V
t
dI R /dt
I RM
VR
trr = ta + tb
I
dIF /dt = VR /L
S = tb / ta
RECTIFIER
OPERATION
ta tb
V
t
IRM
P3 =
dI R /dt
VR
trr = ta + tb
S = tb/ta
4/8
Turn-off losses (in the diode) :
VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
STTA206S
APPLICATION DATA (Cont’d)
Fig. 4 : TURN-ON CHARACTERISTICS
IF
I Fmax
dI F /dt
Turn-on losses :
P4 = 0.4 (VFP - VF) x IFmax x tfr x F
0
t
VF
V Fp
VF
1.1V F
0
t
tfr
Ratings and characteristics curves are ON
GOING.
Fig. 5: Conduction losses versus average current.
P1(W)
Fig. 6: Switching OFF losses versus dIF/dt.
0.35
3.0
δ = 0.1 δ = 0.2
δ = 0.5
δ = 0.05
2.5
P3(W)
Tj=125°C
F=20KHz
VR=400V
0.30
0.25
2.0
IL=4A
δ=1
0.20
1.5
IL=2A
0.15
1.0
0.10
0.5
0.05
IF(av) (A)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 7: Switching ON losses versus dIF/dt.
0.2
0.00
dIF/dt(A/us)
0
20
40
60
80
100 120 140 160 180 200
Fig. 8: Switching losses in transistor due to the diode.
P5(W)
P4(W)
Tj=125°C F=100KHz IF=IF(AV)
5.0
Tj=125°C F=20KHz
VR=400V
4.5
IL=4A
4.0
0.15
3.5
3.0
0.1
2.5
IL=2A
2.0
1.5
0.05
1.0
dIF/dt(A/us)
0
0
20
40
60
80
100 120 140 160 180 200
0.5
0.0
dIF/dt(A/us)
0
20
40
60
80
100
120
140
160
180
200
5/8
STTA206S
Fig. 9: Forward voltage drop versus forward
current (maximum values).
Fig. 10: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout).
Zth(j-a) (°C/W)
5E+1
1E+0
IFM(A)
δ = 0.5
1E+1
Tj=125°C
δ = 0.2
δ = 0.1
Tj=25°C
1E+0
1E-1
1E-1
Single pulse
T
VFM(V)
1E-2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Fig. 11: Peak reverse recovery current versus
dIF/dt (90% confidence).
10
9
8
7
6
5
4
3
2
1
0
1E-2
1E-1
1E+0
1E+1
tp
1E+2 5E+2
Fig. 12: Reverse recovery time versus dIF/dt (90%
confidence).
IRM(A)
300
VR=400V
Tj=125°C
δ=tp/T
tp(s)
1E-2
1E-3
trr(ns)
VR=400V
Tj=125°C
250
IF=2*IF(av)
200
150
IF=IF(av)
IF=2*IF(av)
100
50
IF=IF(av)
dIF/dt(A/µs)
0
50
100
dIF/dt(A/µs)
150
200
Fig. 13: Softness factor (tb/ta) versus dIF/dt
(typical values).
0
20
40
60
80
100 120 140 160 180 200
Fig. 14: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
1.1
S factor
1.8
0
IF<2*IF(av)
VR=400V
Tj=125°C
1.6
1.0
S factor
1.4
0.9
1.2
IRM
1.0
0.8
0.8
Tj(°C)
dIF/dt(A/µs)
0.6
0
6/8
20
40
60
80
100 120 140 160 180 200
0.7
25
50
75
100
125
STTA206S
Fig. 15: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 16: Forward recovery time versus dIF/dt (90%
confidence).
VFP(V)
22
20
18
16
14
12
10
8
6
4
2
0
300
IF=IF(av)
Tj=125°C
tfr(ns)
IF=IF(av)
Vfr=1.1*VFmax
Tj=125°C
250
200
150
100
50
dIF/dt(A/µs)
dIF/dt(A/µs)
0
20
40
60
80
100 120 140 160 180 200
0
0
20
40
60
80
100 120 140 160 180 200
Fig. 17: Junction capacitance versus reverse
voltage applied (typical values).
10
C(pF)
F=1MHz
5
2
VR(V)
1
1
10
100
200
7/8
STTA206S
PACKAGE MECHANICAL DATA
SMC
DIMENSIONS
E1
REF.
D
E
A1
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
2.90
3.2
0.114
0.126
c
0.15
0.41
0.006
0.016
E
7.75
8.15
0.305
0.321
E1
6.60
7.15
0.260
0.281
E2
4.40
4.70
0.173
0.185
D
5.55
6.25
0.218
0.246
A2
C
L
E2
b
FOOTPRINT DIMENSIONS (in millimeters)
3.3
2.0
4.2
2.0
Type
Marking
Package
Weight
Base qty
Delivery mode
STTA206S
T51
SMC
0.243g
2500
Tape & Reel
Band indicates cathode
Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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