STTA206S ® TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT DEVICE SMC DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH "A" family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "Freewheel Mode" operations and is particulary suitable and efficient in Motor Control Freewheel applications and in Booster diode applications in Power Factor Control circuitries. Packaged in SMC surface mount envelope, these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V VRSM Non repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 8 A Repetitive peak forward current (tp = 5 µs, f = 5kHz) 50 A Maximum operating junction temperature 125 °C - 65 to + 150 °C IFRM Tj Tstg Storage temperature range TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 2D 1/8 STTA206S THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Conditions Value Unit 21 °C/W Junction to lead Conduction power dissipation (see fig. 2) IF(AV) = 1.5A δ = 0.5 Tlead= 72°C 2.5 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 67°C 2.8 W STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2) Symbol VF * IR ** Parameter Test Conditions Forward voltage drop Reverse leakage current IF = 2A VR = 0.8 x VRRM Min Typ Max Unit Tj = 25°C Tj = 125°C 1.75 1.5 V 1.1 Tj = 25°C Tj = 125°C 20 1200 µA 400 Typ Max Unit Test pulses widths : * tp = 380 µs, duty cycle < 2% ** tp = 5 ms , duty cycle < 2% DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING (see Fig. 3) Symbol trr IRM S factor Parameter Reverse recovery time Maximum recovery current Softness factor Test Conditions Min ns Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR = 30V Tj = 125°C VR = 400V dIF/dt = -16 A/µs dIF/dt = -50 A/µs Tj = 125°C VR = 400V dIF/dt = -50 A/µs 20 50 IF = 2A A 1.2 2.0 IF = 2A TBD - TURN-ON SWITCHING (see Fig.8) Symbol 2/8 Parameter tfr Forward recovery time VFp Peak forward voltage Test Conditions Tj = 25°C IF = 1 A dIF/dt = 8 A/µs measured at, 1.1 × VF max Min Typ Max Unit 500 ns 10 V STTA206S APPLICATION DATA The TURBOSWITCHTM "A" is especially designed to provide the lowest overall power losses in any "Freewheel Mode" application (see fig. 1) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode SWITCHING LOSSES in the diode P1 Watts (Fig. 2) P2 Watts (Fig. 2) OFF : P3 Watts ON : P4 Watts (Fig. 3 & 4) SWITCHING LOSSES in the transistor due to the diode P2 Watts (Fig. 3) Fig. 1 : "FREEWHEEL" MODE SWITCHING TRANSISTOR DIODE: TURBOSWITCH "A" IL VR t T F = 1/T = t/T LOAD 3/8 STTA206S APPLICATION DATA (Cont’d) Fig. 2 : STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 x IF(AV) + Rd x IF2(RMS) IF with Rd Vt0 = 1.15 V Rd = 0.175 Ohm (Max values at 125°C) VR V IR VF V tO Reverse losses : P2 = VR x IR x (1 - δ) Fig. 3 : TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3 + 2 × S) × F 6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F + 2 × dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE ta tb V t dI R /dt I RM VR trr = ta + tb I dIF /dt = VR /L S = tb / ta RECTIFIER OPERATION ta tb V t IRM P3 = dI R /dt VR trr = ta + tb S = tb/ta 4/8 Turn-off losses (in the diode) : VR × IRM 2 × S × F 6 x dIF ⁄ dt P3 and P5 are suitable for power MOSFET and IGBT STTA206S APPLICATION DATA (Cont’d) Fig. 4 : TURN-ON CHARACTERISTICS IF I Fmax dI F /dt Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F 0 t VF V Fp VF 1.1V F 0 t tfr Ratings and characteristics curves are ON GOING. Fig. 5: Conduction losses versus average current. P1(W) Fig. 6: Switching OFF losses versus dIF/dt. 0.35 3.0 δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 2.5 P3(W) Tj=125°C F=20KHz VR=400V 0.30 0.25 2.0 IL=4A δ=1 0.20 1.5 IL=2A 0.15 1.0 0.10 0.5 0.05 IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 7: Switching ON losses versus dIF/dt. 0.2 0.00 dIF/dt(A/us) 0 20 40 60 80 100 120 140 160 180 200 Fig. 8: Switching losses in transistor due to the diode. P5(W) P4(W) Tj=125°C F=100KHz IF=IF(AV) 5.0 Tj=125°C F=20KHz VR=400V 4.5 IL=4A 4.0 0.15 3.5 3.0 0.1 2.5 IL=2A 2.0 1.5 0.05 1.0 dIF/dt(A/us) 0 0 20 40 60 80 100 120 140 160 180 200 0.5 0.0 dIF/dt(A/us) 0 20 40 60 80 100 120 140 160 180 200 5/8 STTA206S Fig. 9: Forward voltage drop versus forward current (maximum values). Fig. 10: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout). Zth(j-a) (°C/W) 5E+1 1E+0 IFM(A) δ = 0.5 1E+1 Tj=125°C δ = 0.2 δ = 0.1 Tj=25°C 1E+0 1E-1 1E-1 Single pulse T VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 11: Peak reverse recovery current versus dIF/dt (90% confidence). 10 9 8 7 6 5 4 3 2 1 0 1E-2 1E-1 1E+0 1E+1 tp 1E+2 5E+2 Fig. 12: Reverse recovery time versus dIF/dt (90% confidence). IRM(A) 300 VR=400V Tj=125°C δ=tp/T tp(s) 1E-2 1E-3 trr(ns) VR=400V Tj=125°C 250 IF=2*IF(av) 200 150 IF=IF(av) IF=2*IF(av) 100 50 IF=IF(av) dIF/dt(A/µs) 0 50 100 dIF/dt(A/µs) 150 200 Fig. 13: Softness factor (tb/ta) versus dIF/dt (typical values). 0 20 40 60 80 100 120 140 160 180 200 Fig. 14: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 1.1 S factor 1.8 0 IF<2*IF(av) VR=400V Tj=125°C 1.6 1.0 S factor 1.4 0.9 1.2 IRM 1.0 0.8 0.8 Tj(°C) dIF/dt(A/µs) 0.6 0 6/8 20 40 60 80 100 120 140 160 180 200 0.7 25 50 75 100 125 STTA206S Fig. 15: Transient peak forward voltage versus dIF/dt (90% confidence). Fig. 16: Forward recovery time versus dIF/dt (90% confidence). VFP(V) 22 20 18 16 14 12 10 8 6 4 2 0 300 IF=IF(av) Tj=125°C tfr(ns) IF=IF(av) Vfr=1.1*VFmax Tj=125°C 250 200 150 100 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 0 0 20 40 60 80 100 120 140 160 180 200 Fig. 17: Junction capacitance versus reverse voltage applied (typical values). 10 C(pF) F=1MHz 5 2 VR(V) 1 1 10 100 200 7/8 STTA206S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. D E A1 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 A2 C L E2 b FOOTPRINT DIMENSIONS (in millimeters) 3.3 2.0 4.2 2.0 Type Marking Package Weight Base qty Delivery mode STTA206S T51 SMC 0.243g 2500 Tape & Reel Band indicates cathode Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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